Patents by Inventor Hiroyuki Abo
Hiroyuki Abo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9211707Abstract: A method for manufacturing an inkjet recording head includes preparing a substrate having a mold to become an ink flow passage and an orifice layer covering the mold, and immersing the substrate in a solvent, whereby in immersing the substrate in the solvent, the mold at the substrate immersed in the solvent is irradiated with deep-UV light.Type: GrantFiled: October 19, 2012Date of Patent: December 15, 2015Assignee: Canon Kabushiki KaishaInventors: Hirohisa Fujita, Shuji Koyama, Hiroyuki Abo
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Patent number: 9067460Abstract: According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.Type: GrantFiled: June 25, 2013Date of Patent: June 30, 2015Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Abo, Toshiyasu Sakai, Kazuya Abe
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Patent number: 8999182Abstract: A method for manufacturing a liquid discharge head includes a step of preparing a first substrate having an energy generating element at a front surface side thereof; a step of forming a wall member, which is to become a wall for a liquid flow passage, at the front surface side of the first substrate; a step of forming a mask having an opening on the wall member and forming a second substrate, which is composed of silicon and is to become an orifice plate, on the mask; and a step of forming a liquid supply port in the first substrate and a liquid discharge port in the second substrate by supplying an etchant from a back surface side of the first substrate, the back surface being a surface opposite the front surface.Type: GrantFiled: June 18, 2013Date of Patent: April 7, 2015Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Abo, Keiji Matsumoto
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Patent number: 8808555Abstract: Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.Type: GrantFiled: July 29, 2010Date of Patent: August 19, 2014Assignee: Canon Kabushiki KaishaInventors: Keiji Watanabe, Shuji Koyama, Hiroyuki Abo, Keiji Matsumoto
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Patent number: 8771531Abstract: A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.Type: GrantFiled: March 29, 2012Date of Patent: July 8, 2014Assignee: Canon Kabushiki KaishaInventors: Kenta Furusawa, Shuji Koyama, Hiroyuki Abo, Taichi Yonemoto
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Patent number: 8703509Abstract: A method for manufacturing a substrate for liquid-ejecting heads includes etching a surface of a silicon substrate using a first etchant, with a silicon oxide layer as a mask, to form a depression as a part of a liquid supply port, and subsequently etching at least the silicon oxide layer and the thickness sandwiched between the depression and the etched surface of the silicon substrate with a second etchant to form the liquid supply port.Type: GrantFiled: December 20, 2010Date of Patent: April 22, 2014Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Abo, Keiji Watanabe, Keiji Matsumoto
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Publication number: 20140008322Abstract: According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.Type: ApplicationFiled: June 25, 2013Publication date: January 9, 2014Inventors: Hiroyuki Abo, Toshiyasu Sakai, Kazuya Abe
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Publication number: 20130341302Abstract: A method for manufacturing a liquid discharge head includes a step of preparing a first substrate having an energy generating element at a front surface side thereof; a step of forming a wall member, which is to become a wall for a liquid flow passage, at the front surface side of the first substrate; a step of forming a mask having an opening on the wall member and forming a second substrate, which is composed of silicon and is to become an orifice plate, on the mask; and a step of forming a liquid supply port in the first substrate and a liquid discharge port in the second substrate by supplying an etchant from a back surface side of the first substrate, the back surface being a surface opposite the front surface.Type: ApplicationFiled: June 18, 2013Publication date: December 26, 2013Inventors: Hiroyuki Abo, Keiji Matsumoto
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Patent number: 8492281Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.Type: GrantFiled: July 24, 2012Date of Patent: July 23, 2013Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Abo, Taichi Yonemoto, Shuji Koyama, Kenta Furusawa, Keisuke Kishimoto
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Patent number: 8435805Abstract: Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.Type: GrantFiled: August 23, 2011Date of Patent: May 7, 2013Assignee: Canon Kabushiki KaishaInventors: Taichi Yonemoto, Hiroyuki Abo, Keisuke Kishimoto
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Patent number: 8377828Abstract: A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.Type: GrantFiled: February 22, 2010Date of Patent: February 19, 2013Assignee: Canon Kabushiki KaishaInventors: Keiji Matsumoto, Shuji Koyama, Hiroyuki Abo, Keiji Watanabe
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Patent number: 8366950Abstract: A method for manufacturing a liquid-ejection head substrate including a silicon substrate having a supply port for supplying liquid is provided. The method includes: forming an etching mask layer on a surface of the silicon substrate, the etching mask layer having an opening in a portion corresponding to the supply port; forming a first recess in the surface of the silicon substrate by anisotropically etching the silicon substrate through the opening in the etching mask layer; forming a second recess that extends toward the other surface of the silicon substrate, in a surface of the first recess in the silicon substrate; and forming the supply port by anisotropically etching the silicon substrate from the surface provided with the second recess.Type: GrantFiled: September 5, 2008Date of Patent: February 5, 2013Assignee: Canon Kabushiki KaishaInventors: Mitsuru Chida, Toshiyasu Sakai, Noriyasu Ozaki, Hiroyuki Abo, Kazuya Abe, Kenji Ono
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Patent number: 8329047Abstract: The present invention provides a method for producing a liquid discharge head including a silicon substrate having, on a first surface, energy generating elements, and a supply port penetrating the substrate from the first surface to a second surface, which is a rear surface of the first surface of the substrate. The method includes the steps of: preparing the silicon substrate having a sacrifice layer at a portion on the first surface where the ink supply port is to be formed and an etching mask layer having a plurality of openings on the second surface, the volume of a portion of the sacrifice layer at a position corresponding to a portion between two adjacent said openings being smaller than the volume of a portion of the sacrifice layer at a position corresponding to the opening; etching the silicon substrate from the plurality of openings and etching the sacrifice layer.Type: GrantFiled: December 10, 2009Date of Patent: December 11, 2012Assignee: Canon Kabushiki KaishaInventors: Tadanobu Nagami, Junichi Kobayashi, Takeshi Terada, Makoto Watanabe, Hiroyuki Abo, Mitsunori Toshishige, Yoshinori Tagawa, Shuji Koyama, Kenji Fujii, Masaki Ohsumi, Jun Yamamuro, Hiroyuki Murayama, Yoshinobu Urayama, Taichi Yonemoto
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Publication number: 20120289055Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.Type: ApplicationFiled: July 24, 2012Publication date: November 15, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Hiroyuki Abo, Taichi Yonemoto, Shuji Koyama, Kenta Furusawa, Keisuke Kishimoto
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Publication number: 20120267342Abstract: A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.Type: ApplicationFiled: March 29, 2012Publication date: October 25, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Kenta Furusawa, Shuj i Koyama, Hiroyuki Abo, Taichi Yonemoto
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Publication number: 20120097637Abstract: Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.Type: ApplicationFiled: July 29, 2010Publication date: April 26, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Keiji Watanabe, Shuji Koyama, Hiroyuki Abo, Keiji Matsumoto
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Patent number: 8163187Abstract: Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage.Type: GrantFiled: June 4, 2009Date of Patent: April 24, 2012Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Abo, Masaki Ohsumi, Toshiyasu Sakai, Noriyasu Ozaki, Mitsuru Chida, Kazuya Abe
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Publication number: 20120088317Abstract: A processing method of a silicon substrate, including forming on a back surface of a silicon substrate an etching mask layer having an opening portion, measuring a thickness of the silicon substrate, irradiating the opening portion in the etching mask layer with laser from the back surface of the silicon substrate to form in the silicon substrate a modified layer with a thickness that is varied according to the measured thickness of the silicon substrate, carrying out anisotropic etching with regard to the silicon substrate having the modified layer formed therein to form in the back surface a depressed portion which does not pass through the silicon substrate and which has a bottom surface in the silicon substrate, and carrying out dry etching in the depressed portion to form a through-hole passing from the bottom surface of the depressed portion to a front surface of the silicon substrate.Type: ApplicationFiled: September 6, 2011Publication date: April 12, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Keisuke Kishimoto, Shuji Koyama, Hiroyuki Abo, Taichi Yonemoto
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Publication number: 20120058578Abstract: Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.Type: ApplicationFiled: August 23, 2011Publication date: March 8, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Taichi Yonemoto, Hiroyuki Abo, Keisuke Kishimoto
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Patent number: 8128204Abstract: A liquid ejection head and a method of forming the same. The liquid ejection head includes a substrate, an ejection port, a liquid channel, and a supply port. The substrate has, above one side thereof, an energy generating element configured to generate energy used to eject liquid. The ejection port, from which a liquid is ejected, is located at a position corresponding to the energy generating element. The liquid channel communicates with the ejection port and penetrates the substrate from the one side to another side of the substrate. The supply port communicates with the liquid channel. The substrate has a projecting layer extending inward of an inner peripheral portion of an opening in the supply port in the one side, and the projecting layer and the energy generating element are formed of the same material.Type: GrantFiled: January 19, 2011Date of Patent: March 6, 2012Assignee: Canon Kabushiki KaishaInventors: Noriyasu Ozaki, Junichi Kobayashi, Shuji Koyama, Tadanobu Nagami, Yoshinori Tagawa, Kenji Fujii, Hiroyuki Murayama, Masaki Ohsumi, Jun Yamamuro, Yoshinobu Urayama, Hiroyuki Abo, Takeshi Terada, Masahisa Watanabe, Taichi Yonemoto