Patents by Inventor Hiroyuki Ishibashi
Hiroyuki Ishibashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120228003Abstract: A printed wiring board has an aperture with a continuous peripheral face. The aperture has a mounting hole portion and an insertion hole portion. The mounting hole portion is disposed adjacent to a side edge of the printed wiring board. The insertion hole portion is disposed between the mounting hole portion and the side edge of the printed wiring board. The insertion hole portion is spaced apart from the side edge of the printed wiring board by a distance that is at least equal to a thickness of the printed wiring board.Type: ApplicationFiled: March 6, 2012Publication date: September 13, 2012Applicant: FUNAI ELECTRIC CO., LTD.Inventor: Hiroyuki ISHIBASHI
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Publication number: 20120069932Abstract: A radio transmitter includes a signal processing circuit splitting a basic modulating signal into first and second modulating signals and outputting the first and second modulating signals. A PLL decides a fundamental wave. A VCO forms a portion of the PLL and modulates the fundamental wave decided by the PLL in accordance with a voltage of the first modulating signal outputted from the signal processing circuit. A PLL circuit forms a portion of the PLL and varies a frequency division ratio to modulate the fundamental wave decided by the PLL in accordance with the second modulating signal outputted from the signal processing circuit.Type: ApplicationFiled: September 12, 2011Publication date: March 22, 2012Applicant: Kabushiki Kaisha KenwoodInventor: Hiroyuki Ishibashi
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Publication number: 20110124630Abstract: An objective of the invention is to provide a compound effective for prevention and/or treatment of cancer. The invention relates to a compound according to by formula I, or a salt, solvate or physiologically functional derivative thereof, and a composition for prevention and/or treatment of cancer comprising the same as an active ingredient: wherein R1 to R6, x, and y are as defined in the description.Type: ApplicationFiled: December 18, 2008Publication date: May 26, 2011Inventors: Naofumi Mukaida, Hiroyuki Ishibashi, Tsuyoshi Taniguchi
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Patent number: 7785416Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.Type: GrantFiled: January 3, 2008Date of Patent: August 31, 2010Assignee: Hitachi Chemical Company, Ltd.Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
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Patent number: 7692153Abstract: A scintillator crystal represented by the following general formula (1). Ln(1-y)CeyX3:M??(1) wherein Ln(1-y)CeyX3 represents the chemical composition of the matrix material, Ln represents one or more elements selected from the group consisting of rare earth elements, X represents one or more elements selected from the group consisting of halogen elements, M is the constituent element of the dopant which is doped in the matrix material and represents one or more elements selected from the group consisting of Li, Na, K, Rb, Cs, Al, Zn, Ga, Be, Mg, Ca, Sr, Ba, Sc, Ge, Ti, V, Cu, Nb, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pb, Ag, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl and Bi, and y represents a numerical value satisfying the condition represented by the following inequality (A): 0.0001?y?1??(A).Type: GrantFiled: September 20, 2007Date of Patent: April 6, 2010Assignee: Hitachi Chemical Company, Ltd.Inventors: Shigenori Shimizu, Senguttuvan Nachimuthu, Masahiro Aoshima, Keiji Sumiya, Hiroyuki Ishibashi
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Patent number: 7663891Abstract: In a lead frame board, while a heat radiation wall member formed by a resin having a relatively high thermal conductivity is provided in a low heat-resistance heat generating component mounting region where a low heat-resistance heat generating component is mounted, heat block wall members formed by resins having relatively low thermal conductivities are provided in a high heat-resistance heat generating component mounting region where a high heat-resistance heat generating component is mounted and in a non-heat generating component mounting region where a non-heat generating component is mounted. Thus, heat block is performed between the low heat-resistance heat generating component mounting region and the high heat-resistance heat generating component mounting region and non-heat generating component mounting region, and a heat radiation function is enhanced in the low heat-resistance heat generating component.Type: GrantFiled: May 10, 2006Date of Patent: February 16, 2010Assignee: Omron CorporationInventors: Hirokazu Tanaka, Hiroyuki Ishibashi
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Patent number: 7601016Abstract: In a connector substrate to which are soldered input terminals of a speaker and lead wires connected to an output terminal of a printed circuit board, the connector substrate is flat and approximately rectangular, and snap-off portions for, by being snapped off in a predetermined size, moving extreme positions of a longitudinal direction of the connector substrate, by a predetermined distance, toward an opposite extreme, are formed at either extreme of the longitudinal direction of the connector substrate.Type: GrantFiled: March 25, 2008Date of Patent: October 13, 2009Assignee: Funai Electric Co., Ltd.Inventor: Hiroyuki Ishibashi
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Patent number: 7510671Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.Type: GrantFiled: June 17, 2005Date of Patent: March 31, 2009Assignee: Hitachi Chemical Company, Ltd.Inventors: Kazuhisa Kurashige, Naoaki Shimura, Hiroyuki Ishibashi, Keiji Sumiya, Tatsuya Usui, Shigenori Shimizu
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Publication number: 20080242146Abstract: In a connector substrate to which are soldered input terminals of a speaker and lead wires connected to an output terminal of a printed circuit board, the connector substrate is flat and approximately rectangular, and snap-off portions for, by being snapped off in a predetermined size, moving extreme positions of a longitudinal direction of the connector substrate, by a predetermined distance, toward an opposite extreme, are formed at either extreme of the longitudinal direction of the connector substrate.Type: ApplicationFiled: March 25, 2008Publication date: October 2, 2008Inventor: Hiroyuki Ishibashi
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Publication number: 20080173234Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.Type: ApplicationFiled: January 3, 2008Publication date: July 24, 2008Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
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Patent number: 7399360Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.Type: GrantFiled: June 18, 2004Date of Patent: July 15, 2008Assignee: Hitachi Chemical Company, Ltd.Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
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Publication number: 20080067391Abstract: A scintillator crystal represented by the following general formula (1). Ln(1?y)CeyX3:M ??(1) wherein Ln(1?y)CeyX3 represents the chemical composition of the matrix material, Ln represents one or more elements selected from the group consisting of rare earth elements, X represents one or more elements selected from the group consisting of halogen elements, M is the constituent element of the dopant which is doped in the matrix material and represents one or more elements selected from the group consisting of Li, Na, K, Rb, Cs, Al, Zn, Ga, Be, Mg, Ca, Sr, Ba, Sc, Ge, Ti, V, Cu, Nb, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pb, Ag, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl and Bi, and y represents a numerical value satisfying the condition represented by the following inequality (A): 0.0001?y?1.Type: ApplicationFiled: September 20, 2007Publication date: March 20, 2008Applicant: HITACHI CHEMICAL COMPANY, LTD.,Inventors: Shigenori SHIMIZU, Senguttuvan NACHIMUTHU, Masahiro AOSHIMA, Keiji SUMIYA, Hiroyuki ISHIBASHI
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Patent number: 7314522Abstract: An apparatus having a crucible (1) for holding a raw material, a heating means (11) for heating the raw material in the crucible (1) and a crystal transporting means (17) for transporting a seed crystal (13) upwards from the inside of the crucible (1), which further comprises a heat conducting member (3) which extends upwards at least from the vicinity of the upper end of the crucible (1), surrounds a single crystal (15) formed, and is made of a material having heat conductivity, and an interface portion radiation heat blocking member (7) for blocking, at least during cooling after the formation of a single crystal, the radiation heat toward an upper portion above the interface between a taper portion (15a) of the formed single crystal (15) connecting with the seed crystal (13) and a straight bulge portion (15b) having a cylindrical shape connecting with the taper portion (15a) of the formed single crystal (15).Type: GrantFiled: June 12, 2003Date of Patent: January 1, 2008Assignee: Hitachi Chemical Co., Ltd.Inventors: Shigeki Hirasawa, Masato Ikegawa, Hiroyuki Ishibashi, Akihiro Gunji
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Publication number: 20070289525Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.Type: ApplicationFiled: August 21, 2007Publication date: December 20, 2007Inventors: Kazuhisa Kurashige, Naoaki Shimura, Hiroyuki Ishibashi, Keiji Sumiya, Tatsuya Usui, Shigenori Shimizu
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Patent number: 7301154Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which simultaneously satisfies the conditions specified by the following inequalities (1) and (2). {ALu/(ALu+AGd)}<0.50??(1) {ACe/(ALu+AGd)}?0.002??(2) wherein ALu represents the number of Lu atoms in the crystal, AGd represents the number of Gd atoms in the crystal, and ACe represents the number of Ce atoms in the crystal.Type: GrantFiled: June 17, 2005Date of Patent: November 27, 2007Assignee: Hitachi Chemical Co., Ltd.Inventors: Kazuhisa Kurashige, Naoaki Shimura, Hiroyuki Ishibashi, Keiji Sumiya, Tatsuya Usui, Shigenori Shimizu
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Patent number: 7297954Abstract: The inorganic scintillator of the invention has the chemical composition represented by CexLnySizOu (where Ln represents at least two elements selected from among Y, Gd and Lu. 0.001?x?0.1, 1.9?y?2.1, 0.9?z?1.1, 4.9?u?5.1) and emits fluorescence upon incidence of radiation, wherein the maximum peak wavelength in the intensity spectrum of the emitted fluorescence is a peak in the range between 450 nm and 600 nm.Type: GrantFiled: May 22, 2006Date of Patent: November 20, 2007Assignee: Hitachi Chemical Company, Ltd.Inventors: Kazuhisa Kurashige, Hiroyuki Ishibashi, Tatsuya Usui, Shigenori Shimizu, Naoaki Shimura
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Patent number: 7294268Abstract: This metal containing waste water treatment method introduces a metal containing waste water from above into a submerged membrane separation tank 1 in which a reaction section 2, a submerged membrane section 3 having a submerged membrane 5 and a precipitation section 4 are arranged in order from top to bottom, causes a reaction by adding a pH adjuster to the reaction section 2, subsequently separates water from metal by the submerged membrane 5 of the submerged membrane section 3 and subsequently precipitates and concentrates the metal in the precipitation section 4. As described above, according to this treatment method, the pH adjuster is added to the reaction section 2, and therefore, solid-liquid separation can be effected by the submerged membrane 5 with a hydroxide formed. Moreover, the metal can be precipitated and concentrated by the action of gravity without using energy in the precipitation section 4.Type: GrantFiled: April 15, 2004Date of Patent: November 13, 2007Assignee: Sharp Kabushiki KaishaInventors: Kazuyuki Yamasaki, Kazumi Chujo, Hiroyuki Ishibashi
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Patent number: 7282161Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500.Type: GrantFiled: January 19, 2005Date of Patent: October 16, 2007Assignee: Hitachi Chemical Co., Ltd.Inventors: Kazuhisa Kurashige, Hiroyuki Ishibashi, Keiji Sumiya, Nachimuthu Senguttuvan, Kazuhiro Yoshida, Naoaki Shimura
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Patent number: 7282718Abstract: This invention provides an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising metal oxides including Lu, Gd, Ce and Si, which satisfies the condition specified by the following inequality (1A): 0.0025?{ACe/(ALu+AGd)}?0.025,??(1A) and which has an absorption coefficient of no greater than 0.500 cm?1 for light with a wavelength of 415 nm.Type: GrantFiled: September 8, 2005Date of Patent: October 16, 2007Assignee: Hitachi Chemical Co., Ltd.Inventors: Shigenori Shimizu, Kazuhisa Kurashige, Tatsuya Usui, Naoaki Shimura, Hiroyuki Ishibashi, Keiji Sumiya, Kenzou Susa
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Rare earth silicate single crystal and process for production of rare earth silicate single crystals
Patent number: 7264750Abstract: When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction. The crystal face F100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f100A and partial region surface f100B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles ? formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality: 0.1°???2.0°.Type: GrantFiled: July 26, 2004Date of Patent: September 4, 2007Assignee: Hitachi Chemical Co., Ltd.Inventors: Kazuhisa Kurashige, Naoaki Shimura, Hiroyuki Ishibashi, Akihiro Gunji, Mitsushi Kamada