Abstract: A wiring board (lead frame) has a configuration in which a high-frequency current suppression member formed of a conductive soft magnetic film having high magnetic permeability is provided in a near field (magnetic field dominant area) in a lead frame part (wiring part) which can be a radiation noise source, preferably, in the periphery of the lead frame part.

Abstract: In a lead frame board, while a heat radiation wall member formed by a resin having a relatively high thermal conductivity is provided in a low heat-resistance heat generating component mounting region where a low heat-resistance heat generating component is mounted, heat block wall members formed by resins having relatively low thermal conductivities are provided in a high heat-resistance heat generating component mounting region where a high heat-resistance heat generating component is mounted and in a non-heat generating component mounting region where a non-heat generating component is mounted. Thus, heat block is performed between the low heat-resistance heat generating component mounting region and the high heat-resistance heat generating component mounting region and non-heat generating component mounting region, and a heat radiation function is enhanced in the low heat-resistance heat generating component.

Abstract: The inorganic scintillator of the invention has the chemical composition represented by CexLnySizOu (where Ln represents at least two elements selected from among Y, Gd and Lu. 0.001?x?0.1, 1.9?y?2.1, 0.9?z?1.1, 4.9?u?5.1) and emits fluorescence upon incidence of radiation, wherein the maximum peak wavelength in the intensity spectrum of the emitted fluorescence is a peak in the range between 450 nm and 600 nm.

Abstract: A depth of interaction detector with uniform pulse-height comprises a multi-layer scintillator obtained by coupling at least two scintillator cells on a plane and then stacking the planar coupled scintillator cells, in layers, up to at least two stages and a light-receiving element connected to the bottom face of each scintillator cell of this multi-layer scintillator, wherein the detector is provided with a means for discriminating the position of a scintillator cell, which receives radiant rays and emits light rays and a means for making, uniform, the quantity of the light emitted from each scintillator cell and received by the light-receiving element.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: This invention provides an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising metal oxides including Lu, Gd, Ce and Si, which satisfies the condition specified by the following inequality (1A): 0.0025?{ACe/(ALu+AGd)}?0.025??(1A), and which has an absorption coefficient of no greater than 0.500 cm?1 for light with a wavelength of 415 nm.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which simultaneously satisfies the conditions specified by the following inequalities (1) and (2). {ALu/(ALu+AGd)}<0.50 ??(1) {ACe/(ALu+Gd)}?0.002 ??(2) wherein ALu represents the number of Lu atoms in the crystal, AGd represents the number of Gd atoms in the crystal, and ACe represents the number of Ce atoms in the crystal.

Abstract: An apparatus having a crucible (1) for holding a raw material, a heating means (11) for heating the raw material in the crucible (1) and a crystal transporting means (17) for transporting a seed crystal (13) upwards from the inside of the crucible (1), which further comprises a heat conducting member (3) which extends upwards at least from the vicinity of the upper end of the crucible (1), surrounds a single crystal (15) formed, and is made of a material having heat conductivity, and an interface portion radiation heat blocking member (7) for blocking, at least during cooling after the formation of a single crystal, the radiation heat toward an upper portion above the interface between a taper portion (15a) of the formed single crystal (15) connecting with the seed crystal (13) and a straight bulge portion (15b) having a cylindrical shape connecting with the taper portion (15a) of the formed single crystal (15).

Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500 ??(1)

Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.

Abstract: This metal containing waste water treatment method introduces a metal containing waste water from above into a submerged membrane separation tank 1 in which a reaction section 2, a submerged membrane section 3 having a submerged membrane 5 and a precipitation section 4 are arranged in order from top to bottom, causes a reaction by adding a pH adjuster to the reaction section 2, subsequently separates water from metal by the submerged membrane 5 of the submerged membrane section 3 and subsequently precipitates and concentrates the metal in the precipitation section 4. As described above, according to this treatment method, the pH adjuster is added to the reaction section 2, and therefore, solid-liquid separation can be effected by the submerged membrane 5 with a hydroxide formed. Moreover, the metal can be precipitated and concentrated by the action of gravity without using energy in the precipitation section 4.

Abstract: A depth of interaction detector with uniform pulse-height comprises a multi-layer scintillator obtained by coupling at least two scintillator cells on a plane and then stacking the planar coupled scintillator cells, in layers, up to at least two stages and a light-receiving element connected to the bottom face of each scintillator cell of this multi-layer scintillator, wherein the detector is provided with a means for discriminating the position of a scintillator cell, which receives radiant rays and emits light rays and a means for making, uniform, the quantity of the light emitted from each scintillator cell and received by the light-receiving element.

Abstract: When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction. The crystal face F100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f100A and partial region surface f100B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles ? formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality: 0.1°???2.0° (1).

Abstract: This metal containing waste water treatment method introduces a metal containing waste water from above into a submerged membrane separation tank 1 in which a reaction section 2, a submerged membrane section 3 having a submerged membrane 5 and a precipitation section 4 are arranged in order from top to bottom, causes a reaction by adding a pH adjuster to the reaction section 2, subsequently separates water from metal by the submerged membrane 5 of the submerged membrane section 3 and subsequently precipitates and concentrates the metal in the precipitation section 4. As described above, according to this treatment method, the pH adjuster is added to the reaction section 2, and therefore, solid-liquid separation can be effected by the submerged membrane 5 with a hydroxide formed. Moreover, the metal can be precipitated and concentrated by the action of gravity without using energy in the precipitation section 4.

Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.

Abstract: A Ce-activated GSO single crystal is provided which comprises at least one member selected from the group consisting of Mg, Ta and Zr. The GSO single crystal possesses a faster fluorescence-attenuation time and a smaller output ratio and is colorless and highly transparent. Accordingly, the single crystal may suitably be used as a scintillator for PET.

Abstract: To provide a neutron scintillator, which does not contain a heavy element, which is absolutely necessary in realizing a scintillation detector having low sensitivity to gamma ray and fully capable of counting high intensity neutron, Cu is doped in oxide comprised of Li and B. The oxide comprised of Li and B is a transparent single crystal having composition ratio of Li2B4O7. The neutron scintillator contains Cu by 0.001 to 0.1 wt %. Furthermore, a (001) plane cut off perpendicularly to a growth axis and polished from the single crystal whose orientation has been grown in a <001> axis is made to be a scintillator plate crystal.

Abstract: This metal containing waste water treatment method introduces a metal containing waste water from above into a submerged membrane separation tank 1 in which a reaction section 2, a submerged membrane section 3 having a submerged membrane 5 and a precipitation section 4 are arranged in order from top to bottom, causes a reaction by adding a pH adjuster to the reaction section 2, subsequently separates water from metal by the submerged membrane 5 of the submerged membrane section 3 and subsequently precipitates and concentrates the metal in the precipitation section 4. As described above, according to this treatment method, the pH adjuster is added to the reaction section 2, and therefore, solid-liquid separation can be effected by the submerged membrane 5 with a hydroxide formed. Moreover, the metal can be precipitated and concentrated by the action of gravity without using energy in the precipitation section 4.

Abstract: A method of growing a rare earth silicate single crystal from a melt of a starting material containing a rare earth oxide and a silicon oxide, wherein the starting material in which a density of Fe as an impurity is not more 0.1 ppm, a density of Al as an impurity is not more than 0.4 ppm, or the starting material showing a weight loss of not more than 1.0% when heated up to 1,000.degree. C. is used.This method which makes it possible to stably obtain a rare earth silicate single crystal having a good scintillator performance, such as free of voids and/or non-colored crystals, or may cause no poor fluorescent characteristics due to a compositional deviation of materials.