Patents by Inventor Hiroyuki Iwashita

Hiroyuki Iwashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11742190
    Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: August 29, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Einstein Noel Abarra, Hiroyuki Toshima, Shota Ishibashi, Hiroyuki Iwashita, Tatsuo Hirasawa, Masato Shinada
  • Publication number: 20220403503
    Abstract: A film forming apparatus for forming a metal oxide film on a substrate, includes: a substrate support part configured to support the substrate; a heating mechanism configured to heat the substrate supported by the substrate support part; a processing container in which the substrate support part is provided; a holder configured to hold a metal material target inside the processing container and connected to a power source; a gas supply part configured to supply an oxygen gas into the processing container; and a controller, wherein the controller is configured to control the heating mechanism, the power source, and the gas supply part so as to execute alternately and repeatedly: forming a predetermined film on the substrate inside the processing container by reactive sputtering in a metal mode; and forming a target metal oxide film by causing the predetermined film to react with an oxygen gas inside the processing container.
    Type: Application
    Filed: June 14, 2022
    Publication date: December 22, 2022
    Inventors: Hiroyuki Iwashita, Toru Kitada, Atsushi Shimada
  • Patent number: 11479848
    Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: October 25, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shota Ishibashi, Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
  • Publication number: 20220044920
    Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.
    Type: Application
    Filed: July 29, 2021
    Publication date: February 10, 2022
    Inventors: Einstein Noel ABARRA, Hiroyuki TOSHIMA, Shota ISHIBASHI, Hiroyuki IWASHITA, Tatsuo HIRASAWA, Masato SHINADA
  • Patent number: 11199040
    Abstract: A rotation transmission mechanism may include a plurality of rotation transmission members having a drive wheel and a driven wheel, and an urging member which urges the driven wheel in a reverse direction to a rotational direction by power of the drive source. The drive wheel and the driven wheel are provided with engagement parts structured to transmit turning of the drive wheel to the driven wheel, the drive wheel is provided with a cam face forming part on which the engagement part of the driven wheel is slid at a rotational position where the engagement parts are not engaged with each other, and a brake member structured to generate a rotation load is disposed in a range on an upstream side of a power transmission path including the drive wheel with respect to the driven wheel in the power transmission path transmitting the power of the drive source.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: December 14, 2021
    Assignee: NIDEC SANKYO CORPORATION
    Inventors: Takehiko Yazawa, Hiroyuki Iwashita, Satoru Yokoe
  • Patent number: 11158492
    Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: October 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
  • Publication number: 20210305032
    Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 30, 2021
    Inventors: Shota ISHIBASHI, Hiroyuki TOSHIMA, Hiroyuki IWASHITA, Tatsuo HIRASAWA
  • Publication number: 20210296103
    Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 23, 2021
    Inventors: Shota ISHIBASHI, Tatsuo HIRASAWA, Hiroyuki TOSHIMA, Hiroyuki IWASHITA
  • Publication number: 20210207261
    Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.
    Type: Application
    Filed: January 7, 2021
    Publication date: July 8, 2021
    Inventors: Shota ISHIBASHI, Hiroyuki TOSHIMA, Hiroyuki IWASHITA, Tatsuo HIRASAWA
  • Patent number: 10942440
    Abstract: Provided is a mask blank including a phase shift film having a transmittance of 20% or more difficult to achieve in a phase shift film of a single layer made of a silicon nitride material, and the phase shift film is achieved by using a structure having two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer disposed in order from a transparent substrate side. The mask blank includes a phase shift film on a transparent substrate. The phase shift film has a function of transmitting exposure light of an ArF excimer laser at a transmittance of 20% or more. The mask blank has two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer. The low transmission layer is formed of a silicon nitride-based material. The high transmission layer is formed of a silicon oxide-based material.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: March 9, 2021
    Assignee: HOYA CORPORATION
    Inventors: Hiroyuki Iwashita, Atsushi Matsumoto, Osamu Nozawa
  • Publication number: 20200043711
    Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.
    Type: Application
    Filed: July 25, 2019
    Publication date: February 6, 2020
    Inventors: Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
  • Publication number: 20190187551
    Abstract: Provided is a mask blank including a phase shift film having a transmittance of 20% or more difficult to achieve in a phase shift film of a single layer made of a silicon nitride material, and the phase shift film is achieved by using a structure having two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer disposed in order from a transparent substrate side. The mask blank includes a phase shift film on a transparent substrate. The phase shift film has a function of transmitting exposure light of an ArF excimer laser at a transmittance of 20% or more. The mask blank has two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer. The low transmission layer is formed of a silicon nitride-based material. The high transmission layer is formed of a silicon oxide-based material.
    Type: Application
    Filed: August 2, 2017
    Publication date: June 20, 2019
    Applicant: HOYA CORPORATION
    Inventors: Hiroyuki IWASHITA, Atsushi MATSUMOTO, Osamu NOZAWA
  • Publication number: 20190093409
    Abstract: A rotation transmission mechanism may include a plurality of rotation transmission members having a drive wheel and a driven wheel, and an urging member which urges the driven wheel in a reverse direction to a rotational direction by power of the drive source. The drive wheel and the driven wheel are provided with engagement parts structured to transmit turning of the drive wheel to the driven wheel, the drive wheel is provided with a cam face forming part on which the engagement part of the driven wheel is slid at a rotational position where the engagement parts are not engaged with each other, and a brake member structured to generate a rotation load is disposed in a range on an upstream side of a power transmission path including the drive wheel with respect to the driven wheel in the power transmission path transmitting the power of the drive source.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Inventors: Takehiko YAZAWA, Hiroyuki IWASHITA, Satoru YOKOE
  • Patent number: 10221910
    Abstract: A fluid damper device may include a tube-shaped case including a bottom wall, a tube part extended from the bottom wall, and a partitioning protruded part protruded to an inner side from an inner peripheral face of the tube part, and a turning shaft including a body part facing a first end face of the partitioning protruded part, and a flange part which is enlarged from the body part and faces a second end face of the partitioning protruded part, a valve body supported by the body part, and fluid filled within the case. The first end face of the partitioning protruded part is provided with a first rib protruded toward the body part and extended in the axial line direction and a second rib protruded toward the body part and extended in the axial line direction at a position separated in a circumferential direction from the first rib.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: March 5, 2019
    Assignee: NIDEC SANKYO CORPORATION
    Inventors: Naoya Mihara, Hiroyuki Iwashita
  • Publication number: 20180147816
    Abstract: A resin film for laminating on metal sheet is provided which is composed of a polyester resin having such a mechanical property that a true stress at which a true strain of 1.0 as measured at 45° C. is obtained is 13 to 40 MPa. In addition, a resin film for laminating on metal sheet is provided in which the polyester resin is a material obtained by blending of a polytrimethylene terephthalate resin and a polybutylene terephthalate resin (PTT resin content: 20 to 80 mass %) or a two-layer resin film of a polyester resin and a polyethylene terephthalate resin, wherein the thickness of the polyester resin layer is not less than one half the total resin layer thickness.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Inventors: Hiroyuki IWASHITA, Satoshi KAWAMURA, Takahiko MIYAZAKI
  • Publication number: 20170314633
    Abstract: A fluid damper device may include a tube-shaped case including a bottom wall, a tube part extended from the bottom wall, and a partitioning protruded part protruded to an inner side from an inner peripheral face of the tube part, and a turning shaft including a body part facing a first end face of the partitioning protruded part, and a flange part which is enlarged from the body part and faces a second end face of the partitioning protruded part, a valve body supported by the body part, and fluid filled within the case. The first end face of the partitioning protruded part is provided with a first rib protruded toward the body part and extended in the axial line direction and a second rib protruded toward the body part and extended in the axial line direction at a position separated in a circumferential direction from the first rib.
    Type: Application
    Filed: April 26, 2017
    Publication date: November 2, 2017
    Inventors: Naoya Mihara, Hiroyuki Iwashita
  • Patent number: 9651859
    Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: May 16, 2017
    Assignee: HOYA CORPORATION
    Inventors: Masahiro Hashimoto, Atsushi Kominato, Hiroyuki Iwashita, Osamu Nozawa
  • Publication number: 20160325527
    Abstract: A metal sheet laminating resin film is provided which is composed of a polyester resin having such a mechanical property that a true stress at which a true strain of 1.0 as measured at 45° C. is obtained is 13 to 40 MPa. In addition, a metal sheet laminating resin film is provided in which the polyester resin is a material obtained by blending 20 to 80 mass % of a polytrimethylene terephthalate resin into a polybutylene terephthalate resin or a two-layer resin film of a polyester resin and a polyethylene terephthalate resin, wherein the thickness of the polyester resin layer is not less than one half the total resin layer thickness.
    Type: Application
    Filed: January 16, 2015
    Publication date: November 10, 2016
    Inventors: Hiroyuki IWASHITA, Satoshi KAWAMURA, Takahiko MIYAZAKI
  • Patent number: 9389501
    Abstract: A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.
    Type: Grant
    Filed: January 10, 2014
    Date of Patent: July 12, 2016
    Assignee: HOYA CORPORATION
    Inventors: Masahiro Hashimoto, Toshiyuki Suzuki, Hiroyuki Iwashita
  • Patent number: 9372393
    Abstract: A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN??0.00526CMo2?0.640CMo+26.624.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: June 21, 2016
    Assignee: HOYA CORPORATION
    Inventors: Atsushi Kominato, Osamu Nozawa, Hiroyuki Iwashita, Masahiro Hashimoto