Abstract: A plasma processing method for processing a sample by using plasma on a lot unit basis, including: detecting plural kinds of information as monitor data relating to a processing state of the sample, using a plurality of sensors; selecting a detection time range of the monitor data thus detected; converting the monitor data within the selected detection time range into a converted signal; predicting a pattern shape of the sample based on the converted signal; calculating a correction quantity of a processing parameter, for decreasing a deviation between the predicted pattern shape and a standard value; and converting the correction quantity of a processing parameter obtained by the calculating operation when a kind of a next sample of a next lot is different from the sample, thereby to use a converted correction quantity of the processing parameter for a processing of the next sample.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.

Abstract: A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.

Abstract: A plasma processing method for processing a sample by using plasma on a lot unit basis, including: detecting plural kinds of information as monitor data relating to a processing state of the sample, using a plurality of sensors; selecting a detection time range of the monitor data thus detected; converting the monitor data within the selected detection time range into a converted signal; predicting a pattern shape of the sample based on the converted signal; calculating a correction quantity of a processing parameter, for decreasing a deviation between the predicted pattern shape and a standard value; and converting the correction quantity of a processing parameter obtained by the calculating operation when a kind of a next sample of a next lot is different from the sample, thereby to use a converted correction quantity of the processing parameter for a processing of the next sample.

Abstract: A plasma processing apparatus includes: a processing chamber; a state detector for detecting a state of plasma in the processing chamber; an input unit for inputting process result data of a specimen processed in the plasma processing chamber; and a controller including a prediction equation forming unit for forming a prediction equation of a process result in accordance with plasma state data detected with the state detector for the plasma process simulating a specimen existing state in the processing chamber in a specimen non-placed state and process result data of the specimen input with the input unit and processed by the plasma process in a specimen placed state, and storing the prediction equation, wherein the controller predicts the process result of a succeeding plasma process in accordance with plasma state data newly acquired via the state detector in the specimen non-placed state and the stored prediction equation.

Abstract: In the plasma processing apparatus including a processing chamber for plasma-processing a processed substrate, plasma generating unit that generates plasma in the processing chamber, and a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate, a current detector that detects a current value of leakage current flowing in a circuit formed of a power supply for electrostatic attraction, an electrostatic chuck, a substrate, plasma, a grounded line, and a controlling unit which sets an attraction condition to the current value and controls the applied voltage so that the leakage current reaches the set current value are included.

Abstract: A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.

Abstract: A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.

Abstract: A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.

Abstract: In a semiconductor processing apparatus including a process chamber, a sample stand for holding a sample in the process chamber, and a process gas supply unit for supplying a process gas to the process chamber, a plurality of samples of a lot are successively supplied to a process chamber to be successively processed in an intra-lot successive process. The apparatus includes a state sensor for detecting a state in the process chamber and an intra-lot variation pattern prediction unit for predicting, according to sensor data detected by the state sensor, intra-lot variation patterns of results of the intra-lot successive process. According to a result of the prediction by the intra-lot variation pattern prediction unit, the apparatus changes a process condition applied to a sample of the lot.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.

Abstract: A plasma processing method utilizing a plasma processing apparatus comprising a control unit and a processing chamber for performing a plasma processing in which the processing chamber comprises a plasma status detecting unit for detecting the processing status in the processing chamber and outputting plural output signals. The method includes storing data related to past wafer processing results, plasma status detection data obtained during the past wafer processing, and a relational expression correlating the two data; computing a prediction of the processing result based on the relational expression and the detected data of the processing chamber status transmitted from the plasma status detecting unit, and evaluating the processing chamber status based on the computed prediction of the processing result.

Abstract: A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.

Abstract: A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

Abstract: A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter.

Abstract: A plasma processing apparatus includes a vacuum processing vessel constituting a vacuum processing chamber, a processing gas supply unit supplying a processing gas to the vacuum vessel, a plasma generator generating plasma by supplying electromagnetic energy to the vacuum vessel and dissociating the processing gas supplied thereto so as to process a wafer, and a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber. The control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.

Abstract: The purpose of the invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The present plasma processing apparatus for processing a substrate placed on a substrate holder disposed in a processing chamber using a plasma generated in the processing chamber comprises at least one member detachably mounted on an inner wall surface of the processing chamber having a portion coated with a material different from a material coating the other portion.

Abstract: The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile.

Abstract: The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile.