Abstract: A method of processing a semiconductor which includes providing a process gas supply unit for supplying a process gas to a sample stand to hold a sample in a process chamber and to the process chamber, successively supplying a plurality of samples of a lot to the process chamber to conduct an intra-lot successive process, predicting, before a lot process is started and according to sensor data detected by a state sensor to detect a state in the process chamber, intra-lot variation patterns of results of the intra-lot successive process, and changing, according to a result of the prediction by the intra-lot variation pattern prediction unit, a process condition applied to a sample of the lot and conducting the lot process.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.

Abstract: The invention aims at providing a plasma processing apparatus capable of removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing a processing gas into a processing chamber 101 and generating plasma 110 comprises plasma generating means 106 through 108, a monitor means 112 for detecting the existence of a reaction product containing a material constituting an inner wall 102 of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall 102 of the processing chamber has exceeded a predetermined amount, wherein a plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.

Abstract: A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

Abstract: A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.

Abstract: A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

Abstract: A semiconductor plasma processing apparatus for processing a semiconductor wafer includes a sensor for monitoring at least one processing state of the semiconductor plasma processing apparatus, first and second processing state monitoring units coupled to the sensor, and a selector unit for selecting one of the first and second processing state monitoring units.

Abstract: By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semiconductor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.

Abstract: In a plasma processing apparatus including: a process chamber 3; a light-receiving part 11 for receiving a plasma emission; a spectrometer unit 13 for performing a spectrometry on the plasma emission to convert the same into a multi-channel signal; a signal converting unit 14 for converting the multi-channel signal into one signal using a filter vector stored in a database 15; and a processing unit 16 for determining a condition in the process chamber based on the resulting signal, the condition in the process chamber is determined in such a manner that differences between principal component scores derived from plasma emission data on a lot of substrates by multivariate analysis and principal component scores for the preceding lot of substrates are found, an average value of the differences in one lot, a difference between a maximum and a minimum of the differences in one lot and a standard deviation of the differences in one lot are determined, and the values are compared with a preset threshold.

Abstract: In a semiconductor processing apparatus including a process chamber, a sample stand for holding a sample in the process chamber, and a process gas supply unit for supplying a process gas to the process chamber, a plurality of samples of a lot are successively supplied to a process chamber to be successively processed in an intra-lot successive process. The apparatus includes a state sensor for detecting a state in the process chamber and an intra-lot variation pattern prediction unit for predicting, according to sensor data detected by the state sensor, intra-lot variation patterns of results of the intra-lot successive process. According to a result of the prediction by the intra-lot variation pattern prediction unit, the apparatus changes a process condition applied to a sample of the lot.

Abstract: In a plasma processing apparatus including: a process chamber 3; a light-receiving part 11 for receiving a plasma emission; a spectrometer unit 13 for performing a spectrometry on the plasma emission to convert the same into a multi-channel signal; a signal converting unit 14 for converting the multi-channel signal into one signal using a filter vector stored in a database 15; and a processing unit 16 for determining a condition in the process chamber based on the resulting signal, the condition in the process chamber is determined in such a manner that differences between principal component scores derived from plasma emission data on a lot of substrates by multivariate analysis and principal component scores for the preceding lot of substrates are found, an average value of the differences in one lot, a difference between a maximum and a minimum of the differences in one lot and a standard deviation of the differences in one lot are determined, and the values are compared with a preset threshold.

Abstract: A plasma processing apparatus comprising a processing chamber 1 for providing a plasma process to a wafer 2 and a control unit 10, wherein the processing chamber 1 comprises plasma status detecting means 8 and 9 for detecting the processing status in the chamber and outputting plural output signals; and the control unit 10 comprises a function 13 to store data related to past wafer processing results and the plasma status detection data obtained during that past wafer processing, and a relational expression relating the two data; a function 11 to compute the prediction on the process result based on data transmitted from the plasma status detecting means 8, 9 and the relational expression; and a function 12 to evaluate the status of the processing chamber based on said computed prediction of the processing result, according to which the prediction is computed after processing the wafer based on the relational expression. Thereby, the status of the processing chamber is monitored.

Abstract: A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.

Abstract: By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results.

Abstract: A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results.

Abstract: ABSTRACT A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.