Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]: satisfying both of 500?(C1/W1) and 0.04?(C2/C1);??[A] satisfying both of 200?(C1/?(W1)) and 8?C2; and??[B] satisfying both of 500?(C1/W1) and 8?C2.

Abstract: Provided are a cathode active material having a suitable particle size and high uniformity, and a nickel composite hydroxide as a precursor of the cathode active material. When obtaining nickel composite hydroxide by a crystallization reaction, nucleation is performed by controlling a nucleation aqueous solution that includes a metal compound, which includes nickel, and an ammonium ion donor so that the pH value at a standard solution temperature of 25° C. becomes 12.0 to 14.0, after which, particles are grown by controlling a particle growth aqueous solution that includes the formed nuclei so that the pH value at a standard solution temperature of 25° C. becomes 10.5 to 12.0, and so that the pH value is lower than the pH value during nucleation.

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

Abstract: A data distribution device distributes a plurality of sets of data to a user one set of data at a time intermittently at intervals. Every time derived data obtained using the data are generated by the user, a registration device for user registers derived data generation history information indicating that the derived data are generated in a history management database. A derived data generation history information monitor examines whether or not derived data generation history information is registered in the history management database at a predetermined timing and, when no derived data generation history information is registered, suspends subsequent distribution of the data from the data distributor to the user.

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group.

Abstract: Provided is a method for producing a halogenated hydrocarbon magnesium compound, the method including bringing a halogenated hydrocarbon compound into contact with magnesium having a specific surface area of 1×10?5 to 2×10?4 m2/g. Also provided are methods for producing a tertiary alcohol compound and an organosilicon compound, wherein said production method is utilized.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: A controller, which serves as a pressure-feeding control portion, drives an air pump to pressure-feed air to massage airbags located in a seat. In addition, the controller, which serves as an inflation-deflation control portion, performs massage control that inflates and deflates the airbags while keeping the air pump driven by controlling the operation of intake-discharge valves in second flow passage (branch lines), which connects the air pump to the airbags. Furthermore, the controller, which serves as a decompression control portion, opens a discharge valve, which is located upstream of the intake-discharge valves, in a state in which the airbags are deflated during the massage control.

Abstract: A metal powder having a BET specific surface area of 5 to 250 m2/g is obtained by contacting and mixing together a gas of a metal chloride (metal source gas) and a reducing gas (e.g., hydrogen gas) that have been separately heated so as to instantaneously form fine metal particles based on the gas phase reduction reaction thereof, and collecting the fine metal particles from the gas stream after the reaction.

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group.

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

Abstract: A vehicle seat device includes a reproduction control portion configured to inflate an airbag provided in a seat based on an internal pressure target value, an occupant detection portion configured to detect a seated state in which an occupant is seated on the seat, a body size detection portion configured to detect a size of the occupant, and a correction amount calculation portion configured to calculate, based on the size of the occupant, a correction amount to be used to correct the internal pressure target value in a non-seated state in which the occupant is not seated on the seat.

Abstract: A pneumatic pressure control method for a vehicle seat includes: repeatedly detecting an internal pressure of a bladder provided inside the vehicle seat at intervals; correcting the internal pressure of the bladder based on a differential pressure between a detection value and a target value; and lengthening a detection interval to detect the internal pressure depending on a time elapsing from starting of the vehicle.

Abstract: A vehicle seat device includes: a plurality of air bags configured to be provided inside a seat; a flow path having a shared section to communicate with each of the air bags; a plurality of intake valves each of which is arranged at a flow path position at an upstream of each of the air bags when air is pumped into each of the air bags; a plurality of exhaust valves arranged at flow path positions communicating with the shared section; and a control device configured to control operations of the intake valves and the exhaust valves, in which the control device adjusts a discharge speed of internal air by selectively opening the exhaust valves when the internal air of each of the air bags is discharged.

Abstract: A pneumatic control device for a vehicle seat includes a forcible-delivery control unit, an opening-closing control unit, and a residual pressure release control unit. The forcible-delivery control unit drives an air pump to forcibly deliver air to an airbag, which is provided in a seat. The opening-closing control unit opens and closes an inlet valve, which is provided in a passage of the air. The passage is in communication with the airbag. The residual pressure release control unit opens an outlet valve provided in the passage on an upstream side of the inlet valve after driving of the air pump is stopped, thereby releasing the air sealed on the upstream side of the inlet valve in a closed state from the passage.

Abstract: A metal powder having a BET specific surface area of 5 to 250 m2/g is obtained by contacting and mixing together a gas of a metal chloride (metal source gas) and a reducing gas (e.g., hydrogen gas) that have been separately heated so as to instantaneously form fine metal particles based on the gas phase reduction reaction thereof, and collecting the fine metal particles from the gas stream after the reaction.

Abstract: An air pressure control device of a vehicle seat includes: a bulging shape forming unit configured to form a bulging shape on a seat surface by expanding air bags configured to be provided inside a seat; a bulging shape moving unit configured to move a position of the bulging shape formed on the seat surface by each corresponding air bag by sequentially expanding and contracting a plurality of air bags aligned in a direction along the seat surface in an arrangement direction of the air bags; and a pumping capacity adjusting unit configured to increase a pumping capacity of an air pump that pumps air into each air bag as a protrusion amount of the corresponding bulging shape increases when a formation position of the bulging shape is moved.