Abstract: An acyl-ACP thioesterase consisting of an amino acid sequence of the 115th to 274th amino acids set forth in SEQ ID NO: 1; an acyl-ACP thioesterase gene encoding the protein; a transformant having the gene; and a method of producing a lipid using the transformant.

Abstract: 1) A fused gene including a nucleic acid sequence which affects the biosynthesis or accumulation of neutral lipid and a phosphorus deficiency-responsive expression control sequence which is operably linked to the nucleic acid sequence and controls the expression of the nucleic acid sequence, 2) a transgenic plant which contains the fused gene, 3) a method for manufacturing vegetable fat or oil, including a cultivation step of cultivating the transgenic plant, and 4) a method for manufacturing vegetable fat or oil in which the cultivation step is a step of cultivating the transgenic plant in a phosphorus-deficient state are provided.

Abstract: An acyl-ACP thioesterase consisting of an amino acid sequence of the 115th to 274th amino acids set forth in SEQ ID NO: 1; an acyl-ACP thioesterase gene encoding the protein; a transformant having the gene; and a method of producing a lipid using the transformant.

Abstract: A semiconductor device includes a transistor configuration including first and second gate electrodes, each of the first and second gate electrodes having at least a bottom layer and an upper layer including polycrystalline silicon grains, wherein the first gate electrode is a nMOS gate electrode formed in an nMOS region of the transistor configuration, wherein the polycrystalline silicon grains included in the bottom layer of the first gate electrode have a greater particle diameter than the polycrystalline grains included in the upper layer of the second gate electrode.

Abstract: An acyl-ACP thioesterase consisting of an amino acid sequence of the 115th to 274th amino acids set forth in SEQ ID NO: 1; an acyl-ACP thioesterase gene encoding the protein; a transformant having the gene; and a method of producing a lipid using the transformant.

Abstract: The present disclosure provides a gene encoding a protein having ?-ketoacyl-ACP synthase activity having at least 60% or more identity with the amino acid sequence set forth in SEQ ID NO:1, the protein encoded by the gene, a method of producing a transformant by transforming a host with the gene, a transformant that is transformed with the gene, and a method of producing a lipid, especially, a lipid containing a medium chain fatty acid or ester thereof, by culturing the transformed host that expresses the gene. In some embodiments, the transformant also has a gene encoding an acyl-ACP thioesterase.

Abstract: The purpose of the present invention is to effectively accumulate triacylglycerol in algae cells, the present invention providing a method for introducing a triacylglycerol synthetase gene, a phosphorus starvation-inducible promoter, and a 3? untranslated region into algae.

Abstract: A semiconductor device includes a transistor configuration including first and second gate electrodes, each of the first and second gate electrodes having at least a bottom layer and an upper layer including polycrystalline silicon grains, wherein the first gate electrode is a nMOS gate electrode formed in an nMOS region of the transistor configuration, wherein the polycrystalline silicon grains included in the bottom layer of the first gate electrode have a greater particle diameter than the polycrystalline grains included in the upper layer of the second gate electrode.

Abstract: Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100° C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed.

Abstract: The purpose of the present invention is to effectively accumulate triacylglycerol in algae cells, the present invention providing a method for introducing a triacylglycerol synthetase gene, a phosphorus starvation-inducible promoter, and a 3? untranslated region into algae.

Abstract: A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region.

Abstract: A method of producing a lipid, containing the following steps (1) and (2); and a transformant obtained by introducing a gene encoding the following protein (a) or (b) into a host: (1) introducing a gene encoding the following protein (a) or (b) into a host, and thereby obtaining a transformant, and (2) collecting a lipid from the resulting transformant: (a) A protein consisting of an amino acid sequence set forth in SEQ ID NO: 1; and (b) A protein consisting of an amino acid sequence having 60% or more identity with the amino acid sequence of the protein (a), and having ?-ketoacyl-ACP synthase activity.

Abstract: 1) A fused gene including a nucleic acid sequence which affects the biosynthesis or accumulation of neutral lipid and a phosphorus deficiency-responsive expression control sequence which is operably linked to the nucleic acid sequence and controls the expression of the nucleic acid sequence, 2) a transgenic plant which contains the fused gene, 3) a method for manufacturing vegetable fat or oil, including a cultivation step of cultivating the transgenic plant, and 4) a method for manufacturing vegetable fat or oil in which the cultivation step is a step of cultivating the transgenic plant in a phosphorus-deficient state are provided.

Abstract: An acyl-ACP thioesterase consisting of an amino acid sequence of the 115th to 274th amino acids set forth in SEQ ID NO: 1; an acyl-ACP thioesterase gene encoding the protein; a transformant having the gene; and a method of producing a lipid using the transformant.

Abstract: A load cell including sensor chip (1) on which plural resistive elements rectangular in a plan view are formed, and a member (2) is provided on a front surface side of a semiconductor substrate made of silicon single crystal. The member (2) includes a load portion (3), a fixed pedestal portion (4), and a strain generation portion (5) that is spaced apart from the load portion (3) and the fixed pedestal portion (4), and arranged between the load portion (3) and the fixed pedestal portion (4). The sensor chip (1) is attached onto a front side surface (2a) of the strain generation portion (5) of the member (2) so that a <100> direction of the silicon single crystal in the semiconductor substrate is parallel to a load direction, and a longitudinal direction of the plural resistive elements has an angle of 45° with respect to a load direction.

Abstract: The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw material is melted to form melt. When a part or all of the raw material is melted, the crucible is raised from the initial position or the side heater is lowered from the initial position. At this time, the position of the crucible or the side heater is adjusted such that the amount of heat applied to the lower side curved portion of the crucible side surface is greater than that in the initial relative position between the crucible and the side heater.

Abstract: Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100° C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed.

Abstract: A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.