Patents by Inventor Hiroyuki Ohtsuka
Hiroyuki Ohtsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230420581Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming an emitter layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the emitter layer; removing the diffusion mask in a pattern; forming a base layer on the portion where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.Type: ApplicationFiled: July 7, 2023Publication date: December 28, 2023Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori WATABE, Hiroshi HASHIGAMI, Hiroyuki OHTSUKA
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Patent number: 11804560Abstract: A solar cell including: a semiconductor substrate having a first conductivity type; a first conductivity type layer having a conductivity type equal to the first conductivity type and a second conductivity type layer having a second conductivity type opposite to the first conductivity type, which are located on a first main surface of the substrate; a first collecting electrode on the first conductivity type layer located on the first main surface; and a second collecting electrode on the second conductivity type layer located on the first main surface. In the solar cell, a second conductivity type layer having the second conductivity type is formed on a side surface of the semiconductor substrate and continuously from the second conductivity type layer located on the first main surface. Consequently, it is possible to provide a solar cell having excellent conversion efficiency and being capable of efficiently collecting carriers.Type: GrantFiled: April 7, 2017Date of Patent: October 31, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Hiroyuki Ohtsuka
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Patent number: 11742439Abstract: A drying method of a polyimide paste which can maintain a printing shape while maintaining productivity includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.Type: GrantFiled: August 24, 2018Date of Patent: August 29, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Patent number: 11658251Abstract: An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.Type: GrantFiled: July 14, 2022Date of Patent: May 23, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryo Mitta, Takenori Watabe, Hiroyuki Ohtsuka
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Patent number: 11631779Abstract: A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×1018 atoms/cm3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.Type: GrantFiled: November 7, 2016Date of Patent: April 18, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi Hashigami, Takenori Watabe, Hiroyuki Ohtsuka, Ryo Mitta
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Patent number: 11552202Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.Type: GrantFiled: April 5, 2021Date of Patent: January 10, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi Hashigami, Shun Moriyama, Takenori Watabe, Hiroyuki Ohtsuka
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Patent number: 11538957Abstract: The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.Type: GrantFiled: March 25, 2020Date of Patent: December 27, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Publication number: 20220352396Abstract: An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode . The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.Type: ApplicationFiled: July 14, 2022Publication date: November 3, 2022Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryo MITTA, Takenori WATABE, Hiroyuki OHTSUKA
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Patent number: 11424372Abstract: An object of the present invention is to provide, at a low cost, a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.Type: GrantFiled: April 4, 2017Date of Patent: August 23, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryo Mitta, Takenori Watabe, Hiroyuki Ohtsuka
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Patent number: 11271120Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming a base layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the base layer; removing the diffusion mask in a pattern; forming an emitter layer on the portion of the first main surface where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.Type: GrantFiled: October 25, 2016Date of Patent: March 8, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Ryo Mitta, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Patent number: 11201253Abstract: To Provide a back contact type solar cell with high photovoltaic-conversion efficiency which can be easily manufactured with good yield at low cost. The high photovoltaic-conversion efficiency solar cell of the present invention includes on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate: a first conductive type diffusion layer where first conductive type impurities are diffused; a second conductive type diffusion layer where second conductive type impurities are diffused; and a high resistive layer or an intrinsic semiconductor layer formed between the first conductive type diffusion layer and the second conductive type diffusion layer.Type: GrantFiled: November 15, 2016Date of Patent: December 14, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryo Mitta, Takenori Watabe, Hiroyuki Ohtsuka
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Publication number: 20210226080Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.Type: ApplicationFiled: April 5, 2021Publication date: July 22, 2021Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi HASHIGAMI, Shun MORIYAMA, Takenori WATABE, Hiroyuki OHTSUKA
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Patent number: 11049988Abstract: Provided is a solar cell including, on a first main surface of a semiconductor substrate having a first conductivity type, a base layer which has the first conductivity type, and an emitter layer which is adjacent to the base layer and has a second conductivity type which is a conductivity type opposite to the first conductivity type, and further including a base collecting electrode provided on at least the base layer, and a part of the base collecting electrode is also arranged on the emitter layer adjacent to the base layer on which the base collecting electrode is arranged. Consequently, the inexpensive solar cell having high photoelectric conversion efficiency can be provided.Type: GrantFiled: October 25, 2016Date of Patent: June 29, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Ryo Mitta, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Patent number: 11038070Abstract: A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 ?m or more and (W+110) ?m or less.Type: GrantFiled: October 25, 2016Date of Patent: June 15, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Shun Moriyama, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Patent number: 11038078Abstract: A method for manufacturing a solar cell capable of enhancing photoelectric conversion efficiency is provided. The present invention is a method for manufacturing a solar cell which includes steps of forming a p-n junction on a silicon semiconductor substrate and forming an aluminum oxide film on at least one main surface of the silicon semiconductor substrate, including: a step of subjecting the silicon semiconductor substrate to heat treatment in an atmosphere with 20 g or more water vapor per cubic meter and a temperature of 60° C. or more and 100° C. or less before the step of forming the aluminum oxide film. Consequently, a method for manufacturing a solar cell capable of enhancing photoelectric conversion efficiency is provided.Type: GrantFiled: April 20, 2018Date of Patent: June 15, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Publication number: 20210143291Abstract: A backside contact solar cell has, on a first main surface of a crystal silicon substrate, a p-type region having a p-conductive type and an n-type region having an n-conductive type, and a positive electrode formed on the p-type region and a negative electrode formed on the n-type region, wherein the positive electrode includes a laminated conductor of a first electric conductor which is formed on the p-type region and which includes a group III element and a second electric conductor which is laminated on the first electric conductor and which has a lower content ratio of the group III element than the first electric conductor, and the negative electrode includes the second electric conductor formed on the n-type region. In this way, a low-cost backside contact solar cell has a high photoelectric conversion efficiency.Type: ApplicationFiled: May 7, 2018Publication date: May 13, 2021Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi HASHIGAMI, Takenori WATABE, Hiroyuki OHTSUKA
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Patent number: 10998463Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. There can be provided a solar cell having excellent weather resistance and high photoelectric conversion characteristics.Type: GrantFiled: November 15, 2016Date of Patent: May 4, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi Hashigami, Shun Moriyama, Takenori Watabe, Hiroyuki Ohtsuka
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Patent number: 10998458Abstract: A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 ?m or more and (W+110) ?m or less.Type: GrantFiled: October 25, 2016Date of Patent: May 4, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori Watabe, Shun Moriyama, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Patent number: 10896989Abstract: In a back contact type solar cell in which an impurity diffusion layer where second conductive type impurities are diffused is formed on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate, and an electrode in contact with the impurity diffusion layer is provided, a surface concentration of the impurities in the impurity diffusion layer is not less than 5×1017 atms/cm3 and not more than 5×1019 atms/cm3, and a diffusion depth of the impurities in the impurity diffusion layer is not smaller than 1 ?m and not larger than 2.9 ?m from a top of the back surface. It is thereby possible to provide a high efficiency back contact type solar cell which can be manufactured by a simple method at low cost.Type: GrantFiled: December 13, 2016Date of Patent: January 19, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryo Mitta, Hiroshi Hashigami, Takenori Watabe, Hiroyuki Ohtsuka
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Publication number: 20200303570Abstract: A drying method of a polyimide paste which can maintain a printing shape while maintaining productivity includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.Type: ApplicationFiled: August 24, 2018Publication date: September 24, 2020Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takenori WATABE, Hiroshi HASHIGAMI, Hiroyuki OHTSUKA