Abstract: A light emitting device includes: one or plural light emitting elements having plural electrodes; a chip-like insulator surrounding the one or plural light emitting elements from a side surface side of the one or plural light emitting elements; and plural terminal electrodes electrically connected one-to-one with the plural electrodes, and having protrusions each protruding from a peripheral edge of the chip-like insulator.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: According to one embodiment, an image forming apparatus includes: a first paper feeding unit; a second paper feeding unit; a fixing unit configured to fix a developer image transferred onto a sheet; a conveying path configured to convey sheets; a receiving unit configured to receive an execution instruction for duplex printing for continuously printing an image on one surface and on the other surface of a sheet; an acquiring unit configured to acquire, in the printing on one surface, information concerning presence or absence of an image on the other surface; and a processor configured to change, in the printing on one surface, if a result of the acquisition concerning the sheet fed from the first paper feeding unit indicates that an image is present, a paper feeding unit from the first paper feeding unit to the second paper feeding unit and performs control for re-executing the duplex printing.

Abstract: In order to provide a thermosensitive decolorable ink composition which can readily be decolored with simple heating by rubbing and the like without using a microcapsule and is not developed again in color even after stored at very low temperature (?50° C. or lower) and which is excellent in stability with passage of time and has a vivid hue intensity, the above thermosensitive decolorable ink composition is provided with a constitution in which it contains as a colorant, color developing particles comprising at least a leuco dye, a developer and a crystalline substance and in which it further contains a decolorant comprising an amorphous resin.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: In order to provide a writing instrument in which a writing direction can be visually recognized in a broad range at a visual part of a pen tip and which can surely write to end of writing, the writing instrument is endowed with a constitution in which a pen tip is equipped with a porous member as a writing part and a holding member holding the above porous member and having at least one ink guiding part through which an ink contained in a barrel is provided to a writing part held by the holding member which is a visible part enabling to visually recognize a writing direction, wherein an area ratio of the visible part is 40% or more of the pen tip protruding from a tip part of the writing instrument.

Abstract: According to one embodiment, there is provided an image forming apparatus, including an accommodation unit, an image forming unit, an image reading unit, an image erasing unit, a first medium processing unit, and a second medium processing unit. The first medium processing unit forms the image on the recording medium carried from the accommodation unit and discharges the recording medium on which the image is formed, based on the setting of a first image process mode. The second medium processing unit forms a test image on the recording medium carried from the accommodation unit, reads the test image, erases the test image, and returns the recording medium to the accommodation unit, based on a setting of a second image process mode.

Abstract: A light emitting device includes: one or plural light emitting elements having plural electrodes; a chip-like insulator surrounding the one or plural light emitting elements from a side surface side of the one or plural light emitting elements; and plural terminal electrodes electrically connected one-to-one with the plural electrodes, and having protrusions each protruding from a peripheral edge of the chip-like insulator.

Abstract: A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well structure including well layers and barrier layers for separating between the well layers, and (C) a second GaN-based compound semiconductor layer 17 having p-type conductivity. The well layers are disposed in the active layer 15 so as to satisfy the relation d1<d2 wherein d1 is the well layer density on the first GaN-based compound semiconductor layer side in the active layer and d2 is the well layer density on the second GaN-based compound semiconductor layer side.

Abstract: Disclosed herein is a light-emitting device including a plurality of first light-emitting elements mounted in a matrix form on a common wiring board. Each of the first light-emitting elements has a single crystal semiconductor multilayer structure and is a semiconductor element in the form of a chip that emits light in a given band of wavelengths. When attention is focused on the plurality of first light-emitting elements that belong in a given area of all the plurality of first light-emitting elements, the orientations of the common crystal axes of the first light-emitting elements adjacent to each other at least in one of the row and column directions differ.

Abstract: In order to provide a thermosensitive decolorable ink composition which can readily be decolored with simple heating by rubbing and the like without using a microcapsule and is not developed again in color even after stored at very low temperature (?50° C. or lower) and which is excellent in stability with passage of time and has a vivid hue intensity, the above thermosensitive decolorable ink composition is provided with a constitution in which it contains as a colorant, color developing particles comprising at least a leuco dye, a developer and a crystalline substance and in which it further contains a decolorant comprising an amorphous resin.

Abstract: According to one embodiment, an image forming apparatus includes: a first paper feeding unit; a second paper feeding unit; a fixing unit configured to fix a developer image transferred onto a sheet; a conveying path configured to convey sheets; a receiving unit configured to receive an execution instruction for duplex printing for continuously printing an image on one surface and on the other surface of a sheet; an acquiring unit configured to acquire, in the printing on one surface, information concerning presence or absence of an image on the other surface; and a processor configured to change, in the printing on one surface, if a result of the acquisition concerning the sheet fed from the first paper feeding unit indicates that an image is present, a paper feeding unit from the first paper feeding unit to the second paper feeding unit and performs control for re-executing the duplex printing.

Abstract: According to one embodiment, there is provided an image forming apparatus, including an accommodation unit, an image forming unit, an image reading unit, an image erasing unit, a first medium processing unit, and a second medium processing unit. The first medium processing unit forms the image on the recording medium carried from the accommodation unit and discharges the recording medium on which the image is formed, based on the setting of a first image process mode. The second medium processing unit forms a test image on the recording medium carried from the accommodation unit, reads the test image, erases the test image, and returns the recording medium to the accommodation unit, based on a setting of a second image process mode.

Abstract: According to one embodiment, an image processing apparatus has a storage unit, a display unit, a display control unit, a setting log saving unit, a determination unit, and an updating unit. The storage unit stores default settings. The display unit displays setting contents reflecting the default settings. The display control unit causes the setting contents which are changed in response to an instruction from a user to be displayed on the display unit. The setting log saving unit saves the setting contents of the executed process as setting log information. The determination unit determines whether or not the default settings are to be changed using a plurality of the setting log information. The updating unit, if it is determined that the default settings are to be changed, updates the default settings to default settings determined from the plurality of the setting log information.

Abstract: A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

Abstract: A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A structure to couple exterior components of a vehicle includes a first exterior component and a second exterior component located apart from the first exterior component, wherein the first exterior component comprises an upper protrusion configured to overlap the second exterior component, and wherein the first exterior component comprises a side protrusion configured to overlap the second exterior component. A method to couple exterior components of a vehicle includes providing a protrusion about at least a portion of a first exterior component, installing the first exterior component proximal to a second exterior component, overlapping the protrusion of the first exterior component about a at least a portion of the second exterior component, interposing an elastic member between a peripheral surface of the first exterior component and an edge of the second exterior component, and positioning the elastic member beneath the protrusion of the first exterior component.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.