Patents by Inventor Hiroyuki Okuyama

Hiroyuki Okuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7002182
    Abstract: A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO2 film or the like is formed on the underlying n-type GaN layer. An n-type GaN layer having a hexagonal pyramid shape is selectively grown on a portion, exposed from an opening of the growth mask, of the underlying n-type GaN layer. The growth mask is removed by etching, and then an active layer and a p-type GaN layer are sequentially grown on the entire substrate so as to cover the hexagonal pyramid shaped n-type GaN layer, to form a light emitting device. An n-side electrode and a p-side electrode are then formed.
    Type: Grant
    Filed: September 8, 2003
    Date of Patent: February 21, 2006
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Goshi Biwa, Jun Suzuki
  • Patent number: 6998645
    Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: February 14, 2006
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Patent number: 6969670
    Abstract: At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.
    Type: Grant
    Filed: January 14, 2003
    Date of Patent: November 29, 2005
    Assignee: Sony Corporation
    Inventors: Goshi Biwa, Hiroyuki Okuyama
  • Patent number: 6967353
    Abstract: A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.
    Type: Grant
    Filed: January 14, 2003
    Date of Patent: November 22, 2005
    Assignee: Sony Corporation
    Inventors: Jun Suzuki, Hiroyuki Okuyama, Goshi Biwa, Etsuo Morita
  • Patent number: 6961150
    Abstract: An image processing apparatus includes an edge detecting unit which identifies an area of given image data as a gradation sequence area and a character/line art area and which outputs edge information of the character/line art, a level converting unit which generates a strength modulation signal so as to emphasize an edge of the character/line art area, a laser driver which outputs a laser drive signal in order to form a picture dot larger than a standard size in response to the strength modulation signal. Further, according to the present invention, it is possible to print an image with emphasizing an edge portion of a character/line art by a laser printer.
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: November 1, 2005
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Tec Kabushiki Kaisha
    Inventor: Hiroyuki Okuyama
  • Publication number: 20050221593
    Abstract: At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.
    Type: Application
    Filed: June 3, 2005
    Publication date: October 6, 2005
    Inventors: Goshi Biwa, Hiroyuki Okuyama
  • Patent number: 6946686
    Abstract: A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device.
    Type: Grant
    Filed: February 25, 2004
    Date of Patent: September 20, 2005
    Assignee: Sony Corporation
    Inventors: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
  • Publication number: 20050179025
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 18, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Patent number: 6927164
    Abstract: A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device.
    Type: Grant
    Filed: August 2, 2002
    Date of Patent: August 9, 2005
    Assignee: Sony Corporation
    Inventors: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
  • Publication number: 20050167675
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Publication number: 20050170538
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Publication number: 20050167678
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 31, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Publication number: 20050167676
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 31, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Publication number: 20050167677
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: March 31, 2005
    Publication date: August 4, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Patent number: 6924500
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: August 2, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
  • Publication number: 20050161681
    Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
    Type: Application
    Filed: March 9, 2005
    Publication date: July 28, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Publication number: 20050161688
    Abstract: Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a substrate by vapor phase growth at a first growth temperature, and subsequently forming thereon one or more nitride semiconductor layers at a temperature which is lower than said first growth temperature plus 250° C. The process yields a nitride semiconductor device in which the active layer retains its good crystal properties, without nitrogen voids and metallic indium occurring therein due to breakage of In—N bonds.
    Type: Application
    Filed: March 22, 2005
    Publication date: July 28, 2005
    Inventors: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
  • Publication number: 20050161661
    Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
    Type: Application
    Filed: March 9, 2005
    Publication date: July 28, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
  • Publication number: 20050145865
    Abstract: A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
    Type: Application
    Filed: February 19, 2004
    Publication date: July 7, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Jun Suzuki, Toyoharu Oohata
  • Publication number: 20050145859
    Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
    Type: Application
    Filed: February 24, 2005
    Publication date: July 7, 2005
    Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani