Abstract: A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CF3I and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CF3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

Abstract: The present disclosure aims to provide a novel method for lowering the concentrations of dimethylamine, diethylamine, ethylpropylamine, and ethylisopropylamine in a crude trialkylamine. The present disclosure relates to a method for purifying a trialkylamine, including contacting a crude trialkylamine containing at least one impurity selected from the group consisting of dimethylamine, diethylamine, ethylpropylamine, and ethylisopropylamine with a zeolite to lower a concentration of the at least one impurity selected from the group consisting of dimethylamine, diethylamine, ethylpropylamine, and ethylisopropylamine in the crude trialkylamine than the concentration before contacting with the zeolite.

Abstract: A connector 10 includes a housing 11 made of synthetic resin, a terminal 12 made of metal to be accommodated into the housing 11, a shield member 14 made of metal to be arranged on an outer periphery of the housing 11, and a cover member 15 made of synthetic resin for covering the shield member 14. The cover member 15 includes shield member locking portions 42 for locking the shield member 14 with the shield member 14 restricted from being detached from the cover member 14.

Abstract: Provided is a method for stably supplying trimethylamine containing monomethylamine and/or dimethylamine as trace impurities at a constant makeup. The present invention relates to a method for supplying a composition including keeping a storage container that encloses a composition therein at a constant temperature of 10° C. or higher to supply a gas of the composition to a predetermined device. The composition contains, in a gaseous phase, trimethylamine, dimethylethylamine, and at least one of dimethylamine or monomethylamine.

Abstract: To provide a carbon black for batteries capable of readily obtaining a positive electrode for batteries having excellent adhesiveness, and excellent output characteristics and the cycle characteristics. A carbon black for batteries, the carbon black having a BET specific surface area measured according to JIS K6217-2 C method of 100 m2/g or larger, and a surface fluorine concentration X (unit: atom %) and a surface oxygen concentration Y (unit: atom %) measured by X-ray Photoelectron Spectroscopy (XPS) satisfying the following conditions (A) and (B), 0.3?X?4.0 and??(A) 0.1?Y?3.0.

Abstract: A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1): R1—N?R2R3??(1) wherein N is a nitrogen atom; R1 is a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; R2 and R3 are each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

Abstract: The present invention aims to provide a dry etching agent having less load on global environment and capable of anisotropic etching without the use of special equipment and obtaining a good processing shape and to provide a dry etching method using the dry etching agent. The dry etching agent according the present invention contains at least a hydrofluoroalkylene oxide represented by the following chemical formula: CF3—CxHyFzO (where x=2 or 3; y=1, 2, 3, 4 or 5; and z=2x?1?y) and having an oxygen-containing three-membered ring. The dry etching method according to the present invention includes selectively etching of at least one kind of silicon-based material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide with the use of a plasma gas generated by plasmatization of the dry etching agent.

Abstract: A connector 10 includes a housing 11 made of synthetic resin, a terminal 12 made of metal to be accommodated into the housing 11, a shield member 14 made of metal to be arranged on an outer periphery of the housing 11, and a cover member 15 made of synthetic resin for covering the shield member 14. The cover member 14 includes shield member locking portions 42 for locking the shield member 14 with the shield member 14 restricted from being detached from the cover member 14.

Abstract: A communication cable is provided with a communication line, a terminal portion connected to an end part of the communication line, a housing for accommodating the terminal portion, a waterproof rubber plug and a holder. The rubber plug is held in close contact with an outer periphery of the communication line and partially accommodated in the housing. The holder is mounted on the housing to hold the rubber plug. The rubber plug includes a close-contact portion and an outer side portion located behind the close-contact portion and outside the housing. The close-contact portion is located behind the terminal portion and held in close contact with the outer periphery of the communication line and an inner surface of the housing. The holder covers an outer peripheral surface of the outer side portion over an entire periphery. The holder is divided into a first member and a second member.

Abstract: The present disclosure is directed to a dry etching method for a substrate having a silicon compound film, including: plasmatizing a dry etching agent; and etching the silicon compound film with the plasmatized dry etching agent through a mask formed with a predetermined opening pattern on the silicon compound film, wherein the dry etching agent contains the following first to fourth gases; the first gas is at least one compound selected from the group consisting of iodinated fluorocarbon compounds and brominated fluorocarbon compounds; the second gas is an unsaturated fluorocarbon represented by CnFm; the third gas is an unsaturated hydrofluorocarbon represented by CxHyFz; and the fourth gas is an oxidizing gas.

Abstract: A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CF3I and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CF3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

Abstract: A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least C3F6, a hydrogen-containing saturated fluorocarbon represented by CxHyFz and an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of C3F6 contained in the dry etching agent.

Abstract: A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least C3F6, a hydrogen-containing saturated fluorocarbon represented by CxHyFz and an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of C3F6 contained in the dry etching agent.

Abstract: A twisted pair cable includes a twisted portion in which two communication wires are twisted each other and an untwisted portion in which the two communication wires are untwisted. The terminal is connected to a tip part of the untwisted portion. A crimping member includes a barrel portion crimped to an end part of the twisted portion on the side of the untwisted portion and a non-crimping portion extending from the barrel portion toward the untwisted portion and not crimped to the twisted pair cable. The non-crimping portion includes a facing portion facing the two communication wires in the untwisted portion and rising portions rising from both end part in a direction orthogonal to a longitudinal direction of the untwisted portions in the facing portion. The rising portions surround the two communication wires together with the facing portion.

Abstract: A communication cable is provided with a communication line, a terminal portion connected to an end part of the communication line, a housing for accommodating the terminal portion, a waterproof rubber plug and a holder. The rubber plug is held in close contact with an outer periphery of the communication line and partially accommodated in the housing. The holder is mounted on the housing to hold the rubber plug. The rubber plug includes a close-contact portion and an outer side portion located behind the close-contact portion and outside the housing. The close-contact portion is located behind the terminal portion and held in close contact with the outer periphery of the communication line and an inner surface of the housing. The holder covers an outer peripheral surface of the outer side portion over an entire periphery. The holder is divided into a first member and a second member.

Abstract: A twisted pair cable includes a twisted portion in which two communication wires are twisted each other and an untwisted portion in which the two communication wires are untwisted. The terminal is connected to a tip part of the untwisted portion. A crimping member includes a barrel portion crimped to an end part of the twisted portion on the side of the untwisted portion and a non-crimping portion extending from the barrel portion toward the untwisted portion and not crimped to the twisted pair cable. The non-crimping portion includes a facing portion facing the two communication wires in the untwisted portion and rising portions rising from both end part in a direction orthogonal to a longitudinal direction of the untwisted portions in the facing portion. The rising portions surround the two communication wires together with the facing portion.

Abstract: Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234ze without losing excellent etching characteristics of HFO-1234ze.

Abstract: Disclosed is a dry etching method for etching a laminated film of silicon oxide layers and silicon nitride layers on a substrate. The dry etching method includes providing a mask on the laminated film, generating a plasma from a dry etching agent and etching the laminated film by the plasma through the mask under a bias voltage of 500 V or higher to form a through hole in the laminated film vertically to the layers, wherein the dry etching agent contains at least C3H2F4, an unsaturated perfluorocarbon represented by CxFy and an oxidizing gas, and wherein a volume of the unsaturated perfluorocarbon contained in the dry etching agent is 0.1 to 10 times a volume of the C3H2F4 contained in the dry etching agent.

Abstract: To provide a carbon black for batteries capable of readily obtaining a positive electrode for batteries having excellent adhesiveness, and excellent output characteristics and the cycle characteristics. A carbon black for batteries, the carbon black having a BET specific surface area measured according to JIS K6217-2 C method of 100 m2/g or larger, and a surface fluorine concentration X (unit: atom %) and a surface oxygen concentration Y (unit: atom %) measured by X-ray Photoelectron Spectroscopy (XPS) satisfying the following conditions (A) and (B), 0.3?X?4.0 and??(A) 0.1?Y?3.0.

Abstract: A housing (10) includes a terminal accommodating portion (18) capable of accommodating a terminal fitting (80), a rubber plug accommodating portion (19) communicating with the terminal accommodating portion (18) and capable of accommodating a rubber plug (70), and two housing locks (23) on both sides across the rubber plug accommodating portion (19). Escape of the rubber plug (70) from the rubber plug accommodating portion (19) is restricted by a cover (40) including a wire insertion hole (43). The cover (40) includes two cover locks (46) lockable to the housing locks (23) and a wire insertion opening (44) located between the cover locks (46) and formed by cutting a circumferential part from an outer peripheral surface to the wire insertion hole (43).