Abstract: Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234ze without losing excellent etching characteristics of HFO-1234ze.

Abstract: Disclosed is a dry etching method for etching a laminated film of silicon oxide layers and silicon nitride layers on a substrate. The dry etching method includes providing a mask on the laminated film, generating a plasma from a dry etching agent and etching the laminated film by the plasma through the mask under a bias voltage of 500 V or higher to form a through hole in the laminated film vertically to the layers, wherein the dry etching agent contains at least C3H2F4, an unsaturated perfluorocarbon represented by CxFy and an oxidizing gas, and wherein a volume of the unsaturated perfluorocarbon contained in the dry etching agent is 0.1 to 10 times a volume of the C3H2F4 contained in the dry etching agent.

Abstract: A dry etching method provided to involve the steps of: (a) disposing a substrate within a chamber, the substrate having an amorphous carbon film; (b) preparing a plasma gas by converting a dry etching agent into a plasma, the dry etching agent containing at least oxygen and alkylsilane; and (c) conducting plasma etching on the amorphous carbon film by using the plasma gas and an inorganic film as a mask.

Abstract: What is disclosed is a dry etching gas containing 1,3,3,3-tetrafluoropropene, wherein 1,3,3,3-tetrafluoropropene has purity of 99.5 mass % or more, and a total of concentration of each mixed metal component of Fe, Ni, Cr, Al, and Mo is 500 mass ppb or less. Furthermore, regarding to the dry etching gas, it is preferable that a content of nitrogen is 0.5 volume % or less, and that a content of water is 0.05 mass % or less. In a dry etching with a plasma gas obtained by making a dry etching gas into plasma, the dry etching gas of the present invention can improve etching selectivity of silicon-based material with respect to a mask.

Abstract: Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry etching method includes generating a plasma gas from a dry etching agent and etching the laminated film with the plasma gas under the application of a bias voltage. The dry etching agent contains an unsaturated hydrofluorocarbon represented by the following formula: C3HxFy where x is an integer of 1 to 5; y is an integer of 1 to 5; and x and y satisfy a relationship of x+y=4 or 6, and iodine heptafluoride. The volume of the iodine heptafluoride in the dry etching agent is 0.1 to 1.0 times the volume of the unsaturated hydrofluorocarbon in the dry etching agent.

Abstract: A dry etching method provided to involve the steps of: (a) disposing a substrate within a chamber, the substrate having an amorphous carbon film; (b) preparing a plasma gas by converting a dry etching agent into a plasma, the dry etching agent containing at least oxygen and alkylsilane; and (c) conducting plasma etching on the amorphous carbon film by using the plasma gas and an inorganic film as a mask.

Abstract: Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry etching method includes generating a plasma gas from a dry etching agent and etching the laminated film with the plasma gas under the application of a bias voltage. The dry etching agent contains an unsaturated hydrofluorocarbon represented by the following formula: C3HxFy where x is an integer of 1 to 5; y is an integer of 1 to 5; and x and y satisfy a relationship of x+y=4 or 6, and iodine heptafluoride. The volume of the iodine heptafluoride in the dry etching agent is 0.1 to 1.0 times the volume of the unsaturated hydrofluorocarbon in the dry etching agent.

Abstract: A cleaning gas according to the present invention is intended for removing a silicon carbide-containing deposit on a base of at least partially graphitized carbon and is characterized by containing iodine heptafluoride. It is possible by the use of such a cleaning gas to remove silicon carbide without etching of graphite.

Abstract: A housing (10) made of synthetic resin is formed with a pair of interference surfaces (17A, 17B) symmetrical with respect to a virtual axis of symmetry (S) and oblique to the virtual axis of symmetry (S) and receiving portions (16) spaced apart from the interference surfaces (17A, 17B) in a direction of the virtual axis of symmetry (S). The upper and lower covers (21A, 21B) of wire (20) are formed with interference portions (27) that come into contact with only parts of the pair of interference surfaces (17A, 17B), and contact portions (26) that come into contact with the receiving portions (16). The interference portions (27) contact the interference surfaces (17A, 17B) and plastically deform when the housing (10) and the wire cover (20) are connected and the receiving portions (16) and the contact portions (26) are held in contact.

Abstract: A storage element includes: a storage layer that has magnetization perpendicular to a film face, the direction of the magnetization being changed corresponding to information; a magnetization fixed layer that has magnetization perpendicular to a film face that is a reference of the information stored in the storage layer; and an insulating layer that is formed of a nonmagnetic body provided between the storage layer and the magnetization fixed layer. The magnetization fixed layer has a structure in which the nonmagnetic layer is interposed between upper and lower ferromagnetic layers which have a laminated ferri-pinned structure of magnetically anti-parallel coupling. The direction of the magnetization of the storage layer is changed by injecting spin-polarized electrons in a lamination direction of a layer structure having the storage layer, the insulating layer, and the magnetization fixed layer, and recording of the information is performed on the storage layer.

Abstract: A housing (10) made of synthetic resin is formed with a pair of interference surfaces (17A, 17B) symmetrical with respect to a virtual axis of symmetry (S) and oblique to the virtual axis of symmetry (S) and receiving portions (16) spaced apart from the interference surfaces (17A, 17B) in a direction of the virtual axis of symmetry (S). The upper and lower covers (21A, 21B) of wire (20) are formed with interference portions (27) that come into contact with only parts of the pair of interference surfaces (17A, 17B), and contact portions (26) that come into contact with the receiving portions (16). The interference portions (27) contact the interference surfaces (17A, 17B) and plastically deform when the housing (10) and the wire cover (20) are connected and the receiving portions (16) and the contact portions (26) are held in contact.