Patents by Inventor Hiroyuki Otsuka
Hiroyuki Otsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12040149Abstract: A first yoke is arranged in a contact direction with respect to a movable contact piece. A second yoke is arranged in an opening direction with respect to the movable contact piece. The first yoke and the second yoke are configured to generate a magnetic force that attracts the first yoke and the second yoke to each other when the movable contact contacts the fixed contact and is energized. The first yoke and the second yoke are arranged not to contact each other so that the movable contact piece can contact the fixed terminal in a state where the movable contact and the fixed contact are lost.Type: GrantFiled: November 18, 2019Date of Patent: July 16, 2024Assignee: OMRON CORPORATIONInventors: Yasuo Hayashida, Ryota Minowa, Shingo Mori, Naoki Kawaguchi, Kohei Otsuka, Hiroyuki Iwasaka
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Publication number: 20240217222Abstract: A laminate film including a base material layer and a sealant layer including a polyolefin resin, the base material layer including a first resin layer that includes a polyolefin resin and a second resin layer that includes a laser beam-absorbing resin, in which the laser beam-absorbing resin absorbs a laser beam used to form a half-cut line, the polyolefin resins included in the sealant layer and the first resin layer do not absorb the laser beam, and a total content percentage occupied by the polyolefin resins in the entirety of the laminate film is 90% by mass or greater.Type: ApplicationFiled: August 23, 2022Publication date: July 4, 2024Applicant: TOPPAN INC.Inventors: Masaki SATO, Hiroyuki OTSUKA, Yuka FUKUDA
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Publication number: 20240136464Abstract: A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.Type: ApplicationFiled: November 28, 2023Publication date: April 25, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki OTSUKA, Shozo SHIRAI
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Patent number: 11901475Abstract: The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.Type: GrantFiled: November 25, 2015Date of Patent: February 13, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki Otsuka, Shozo Shirai
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Patent number: 11742438Abstract: A method for manufacturing a solar cell having a P-type silicon substrate wherein one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes; wherein the P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 ?·cm or less; and a back surface electrode pitch Prm [mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity Rsub [?·cm] of the substrate satisfy the relation represented by the following formula (1). log(Rsub)??log(Prm)+1.Type: GrantFiled: February 12, 2019Date of Patent: August 29, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Hiroyuki Otsuka
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Patent number: 11616163Abstract: Disclosed is a firing furnace for firing an electrode of a solar cell element, which is provided with: a transfer member, which transfers a substrate having a conductive paste applied thereto; a heating section, which heats the substrate and fires the conductive paste; and a cooling section, which cools the heated substrate. The furnace is also provided with a heating means for heating the transfer member. Specifically, at the time of firing the electrode paste using the wire-type firing furnace, since a wire is fired at a temperature substantially equivalent to the ambient temperature of the heating section, deterioration of yield due to having the electrode damaged by a deposited material of the metal component of the conductive paste is suppressed, said deposited material being deposited on the wire, and the wire-type firing furnace can be continuously used.Type: GrantFiled: November 22, 2017Date of Patent: March 28, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryo Mitta, Takenori Watabe, Hiroyuki Otsuka
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Publication number: 20230074411Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.Type: ApplicationFiled: November 16, 2022Publication date: March 9, 2023Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Hiroshi Hashigami, Takenori Watabe, Hiroyuki Otsuka
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Patent number: 11545588Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.Type: GrantFiled: May 28, 2019Date of Patent: January 3, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi Hashigami, Takenori Watabe, Hiroyuki Otsuka
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Patent number: 11538944Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.Type: GrantFiled: June 21, 2018Date of Patent: December 27, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroshi Hashigami, Takenori Watabe, Hiroyuki Otsuka
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Patent number: 11527983Abstract: An electric power conversion device includes: a first electric power conversion circuit, a current detection circuit, an electric power conversion circuit of field coil excite use, a control circuit, and detector which detects an induced electromotive force generated in the motor generator. In a case where an over current, is detected by the first electric power conversion circuit, the control circuit turns off a switching of a phase of the first electric power conversion circuit from which an over current s detected and a switching of the electric power conversion circuit of field coil excite use. After the value of an induced electromotive force by the motor generator falls below a predetermined value, the control circuit controls to stop a supply of electric power of all phases by the first electric power conversion circuit.Type: GrantFiled: August 20, 2021Date of Patent: December 13, 2022Assignee: Mitsubishi Electric CorporationInventors: Ryo Ute, Hiroyuki Otsuka, Takamasa Asai
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Publication number: 20220123682Abstract: An electric power conversion device includes: a first electric power conversion circuit, a current detection circuit, an electric power conversion circuit of field coil excite use, a control circuit, and detector which detects an induced electromotive force generated in the motor generator. In a case where an over current, is detected by the first electric power conversion circuit, the control circuit turns off a switching of a phase of the first electric power conversion circuit from which an over current s detected and a switching of the electric power conversion circuit of field coil excite use. After the value of an induced electromotive force by the motor generator falls below a predetermined value, the control circuit controls to stop a supply of electric power of all phases by the first electric power conversion circuit.Type: ApplicationFiled: August 20, 2021Publication date: April 21, 2022Applicant: Mitsubishi Electric CorporationInventors: Ryo UTE, Hiroyuki OTSUKA, Takamasa ASAI
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Patent number: 11227965Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate, wherein the P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element. This provides a solar cell with excellent conversion efficiency provided with a gallium-doped substrate, and a method for manufacturing the same.Type: GrantFiled: October 13, 2015Date of Patent: January 18, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki Otsuka, Takenori Watabe
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Patent number: 11222991Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate. The P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element.Type: GrantFiled: February 7, 2020Date of Patent: January 11, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki Otsuka, Takenori Watabe
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Patent number: 11101391Abstract: A method for screen printing, including: by using a screen printing apparatus provided with a screen printing plate having an opening part corresponding to a printing pattern, a scraper, and a squeegee, filling a paste supplied on an upper surface of the screen printing plate into the opening part of the screen printing plate by the scraper; and, after that, pushing out the paste to a predetermined position of an object to be printed from the opening part of the screen printing plate by the squeegee to screen-print the paste corresponding to the printing pattern on the object to be printed, wherein the humidity in the screen printing apparatus is adjusted during the screen printing. As a result, by controlling an amount of moisture in the paste on the screen printing plate, a screen printing method is capable of improving the printing property of the paste.Type: GrantFiled: July 15, 2016Date of Patent: August 24, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shintarou Tsukigata, Norifumi Takahashi, Hiroyuki Otsuka
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Patent number: 11087934Abstract: An arc quenching device, which is highly reliable, small-sized, and inexpensive, includes: a semiconductor switch connected in parallel to a first switch which is mechanical; a constant voltage circuit configured to use a voltage which is generated between both contact points of the first switch to output a voltage which causes the semiconductor switch to turn on; and a second timer circuit configured to cause the semiconductor switch to turn off after a predetermined time has elapsed since the semiconductor switch turned on.Type: GrantFiled: October 20, 2017Date of Patent: August 10, 2021Assignee: Omron CorporationInventors: Koji Omori, Makito Morii, Hiroyuki Otsuka
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Patent number: 10964493Abstract: An arc quenching device, which prevents a load device from displaying an unnecessary behavior during starting of a power supply, includes: a semiconductor switch connected in parallel to a first switch which is mechanical; a power supply circuit configured to use a voltage which is generated between both contact points of the first switch to output a voltage which causes the semiconductor switch to turn on; and a second switch configured to cause its open state to prevent the semiconductor switch from turning on.Type: GrantFiled: October 20, 2017Date of Patent: March 30, 2021Assignee: Omron CorporationInventors: Koji Omori, Makito Morii, Hiroyuki Otsuka
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Patent number: 10686082Abstract: A photovoltaic generation system includes: a solar cell array formed with one or more solar cell modules; and a power conditioner, wherein each of the solar cell modules includes one or more solar cells, the photovoltaic generation system further has a first conductive wire connected to a conductor parts which is provided at each of the solar cell modules and which is insulated from the solar cells, and a constant voltage power supply whose one end is connected to the first conductive wire, and a potential is supplied to the conductor parts by the constant voltage power supply. As a result, the photovoltaic generation system which can suppress degradation of solar cell characteristics due to PID while suppressing increase in manufacturing cost of the solar cell module is provided.Type: GrantFiled: August 18, 2016Date of Patent: June 16, 2020Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Hiroyuki Otsuka
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Publication number: 20200185552Abstract: A solar cell having a P-type silicon substrate where one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes. The P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 ?·cm or less; and a back surface electrode pitch Prm [mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity Rsub [?·cm] of the substrate satisfy the relation represented by the following formula (1). log(Rsub)??log(Prm)+1.Type: ApplicationFiled: February 14, 2020Publication date: June 11, 2020Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Hiroyuki OTSUKA
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Publication number: 20200176626Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate. The P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element.Type: ApplicationFiled: February 7, 2020Publication date: June 4, 2020Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroyuki OTSUKA, Takenori WATABE
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Patent number: 10669131Abstract: Provided is a construction machine capable of suppressing deformation of a boom in a simple configuration and at low costs. The construction machine includes a pair of backstops having respective hydraulic cylinders; a supply device which supplies the hydraulic cylinders with hydraulic fluid; a deformation sensing device which senses deformation of the boom; and a control device which controls the supply device so as to make a thrust of the hydraulic cylinder of one backstop having a larger pressing force, out of the pair of backstops, be larger than a thrust of the hydraulic cylinder of the other backstop, the pressing force being applied due to the deformation of the boom.Type: GrantFiled: November 6, 2017Date of Patent: June 2, 2020Assignee: KOBELCO CONSTRUCTION MACHINERY CO., LTD.Inventors: Takahiro Oka, Hiroyuki Otsuka, Shoji Watanabe, Daisuke Takaoka, Tetsuya Kobatake, Shingo Kurihara