Abstract: A soft magnetic metal powder includes soft magnetic metal particles with a particle size of 5.0 ?m or more. (y95/y50?y90/y50)/(0.95?0.90) is 20.0 or less, where y95 (?m) denotes D95, y90 (?m) denotes D90, and y50 (?m) denotes D50 of a particle size distribution of the soft magnetic metal particles with a particle size of 5.0 ?m or more. A magnetic core includes soft magnetic metal particles with a Heywood diameter of 5.0 ?m or more in a section of the magnetic core. (Y95/Y50?Y90/Y50)/(0.95?0.90) is 20.0 or less, where Y95 (?m) denotes D95, Y90 (?m) denotes D90, and Y50 (?m) denotes D50 of a particle size distribution of the soft magnetic metal particles with a Heywood diameter of 5.0 ?m or more.

Abstract: An electromagnetic relay includes a fixed terminal, a fixed contact, a movable contact, a movable contact piece, and a dust collecting mechanism. The fixed contact is connected to the fixed terminal. The movable contact faces the fixed contact. The movable contact piece is connected to the movable contact. The movable contact piece is movable between a closed position at which the movable contact is in contact with the fixed contact and an open position at which the movable contact is separated from the fixed contact. The dust collecting mechanism is disposed adjacent to the fixed contact and the movable contact. The dust collecting mechanism generates a second negative pressure greater than a first negative pressure generated between the fixed contact and the movable contact when the movable contact piece moves from the closed position to the open position.

Abstract: A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

Abstract: A steel sheet includes, as a chemical composition, by mass %: C: 0.0015% to 0.0400%; Mn: 0.20% to 1.50%; P: 0.010% to 0.100%; Cr: 0.001% to 0.500%; Si: 0.200% or less; S: 0.020% or less; sol. Al: 0.200% or less; N: 0.0150% or less; Mo: 0% to 0.500%; B: 0% to 0.0100%; Nb: 0% to 0.200%; Ti: 0% to 0.200%; Ni: 0% to 0.200%; Cu: 0% to 0.100%; and a remainder including iron and impurities, in which a metallographic structure in a surface layer region includes ferrite having a volume fraction of 90% or more, and in the surface layer region, an average grain size of the ferrite is 1.0 ?m to 15.0 ?m, and a texture in which an XODF{001}/{111}, S as a ratio of an intensity of {001} orientation to an intensity of {111} orientation in the ferrite is 0.30 or more and less than 3.50 is included.

Abstract: An electromagnetic relay includes a first fixed terminal with a first fixed contact; a movable contact piece with a first movable contact on a first surface thereof facing the first fixed contact; a drive device with drive shaft to move the movable contact piece; a contact case; and a guide wall. The guide wall is connected to an inner surface of the contact case. The guide wall leads a first airflow around the first fixed contact and the first movable contact toward a second surface of the movable contact piece, which is on the side of the movable contact piece that is opposite to the first side. The first airflow is caused by current flowing between the first fixed contact and the first movable contact.

Abstract: A sheet-shaped cushioning rubber including a planar base portion and a three-dimensional portion formed to rise from the base portion toward one side in a sheet thickness direction, the planar base portion and the three-dimensional portion being alternately provided in one direction of a sheet plane, wherein the three-dimensional portion includes a hollow portion that opens toward the other side in the sheet thickness direction. The three-dimensional portion is integrally provided with a first rising surface that is continuous from the base portion, a top surface, a second rising surface on a side opposite to the first rising surface, and a pair of rising surfaces on both sides in a sheet width direction, and the hollow portion opens only toward the other side in the sheet thickness direction.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: Provided is a solar cell that includes: a semiconductor substrate on which at least pn junctions are formed; a multiplicity of finger electrodes that are formed in a comb-like shape on at least one surface of the semiconductor substrate; and a plurality of bus bar electrodes that are arranged so as to be orthogonal to the lengthwise direction of the finger electrodes and are connected with the finger electrodes. This solar cell is configured so that the finger electrodes connected with one of the bus bar electrodes are separated from the finger electrodes connected with another bus bar electrode that is arranged so as to be parallel to this one of the bus bar electrodes, and ends in the lengthwise direction of adjacent two or more of the finger electrodes connected with each bus bar electrode are electrically connected with one another by auxiliary electrodes.

Abstract: A laminate film including a base material layer and a sealant layer including a polyolefin resin, the base material layer including a first resin layer that includes a polyolefin resin and a second resin layer that includes a laser beam-absorbing resin, in which the laser beam-absorbing resin absorbs a laser beam used to form a half-cut line, the polyolefin resins included in the sealant layer and the first resin layer do not absorb the laser beam, and a total content percentage occupied by the polyolefin resins in the entirety of the laminate film is 90% by mass or greater.

Abstract: A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

Abstract: The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.

Abstract: A method for manufacturing a solar cell having a P-type silicon substrate wherein one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes; wherein the P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 ?·cm or less; and a back surface electrode pitch Prm [mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity Rsub [?·cm] of the substrate satisfy the relation represented by the following formula (1). log(Rsub)??log(Prm)+1.

Abstract: Disclosed is a firing furnace for firing an electrode of a solar cell element, which is provided with: a transfer member, which transfers a substrate having a conductive paste applied thereto; a heating section, which heats the substrate and fires the conductive paste; and a cooling section, which cools the heated substrate. The furnace is also provided with a heating means for heating the transfer member. Specifically, at the time of firing the electrode paste using the wire-type firing furnace, since a wire is fired at a temperature substantially equivalent to the ambient temperature of the heating section, deterioration of yield due to having the electrode damaged by a deposited material of the metal component of the conductive paste is suppressed, said deposited material being deposited on the wire, and the wire-type firing furnace can be continuously used.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: An electric power conversion device includes: a first electric power conversion circuit, a current detection circuit, an electric power conversion circuit of field coil excite use, a control circuit, and detector which detects an induced electromotive force generated in the motor generator. In a case where an over current, is detected by the first electric power conversion circuit, the control circuit turns off a switching of a phase of the first electric power conversion circuit from which an over current s detected and a switching of the electric power conversion circuit of field coil excite use. After the value of an induced electromotive force by the motor generator falls below a predetermined value, the control circuit controls to stop a supply of electric power of all phases by the first electric power conversion circuit.

Abstract: An electric power conversion device includes: a first electric power conversion circuit, a current detection circuit, an electric power conversion circuit of field coil excite use, a control circuit, and detector which detects an induced electromotive force generated in the motor generator. In a case where an over current, is detected by the first electric power conversion circuit, the control circuit turns off a switching of a phase of the first electric power conversion circuit from which an over current s detected and a switching of the electric power conversion circuit of field coil excite use. After the value of an induced electromotive force by the motor generator falls below a predetermined value, the control circuit controls to stop a supply of electric power of all phases by the first electric power conversion circuit.

Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate, wherein the P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element. This provides a solar cell with excellent conversion efficiency provided with a gallium-doped substrate, and a method for manufacturing the same.

Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate. The P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element.