Abstract: Disclosed herein is multi-layer, microporous polyolefin membrane comprising a first porous layer comprising primarily a polyethylene, and a second porous layer comprising a polyethylene resin and polypropylene, the polypropylene having a weight-average molecular weight of 6×105 or more and a heat of fusion (measured by a differential scanning calorimeter) of 90 J/g or more, a fraction of the polypropylene having a molecular weight of 5×104 or less being 5% or less by mass.

Abstract: Disclosed herein is a multi-layer, microporous polyolefin membrane comprising a first porous layer of a polyethylene, and a second porous layer comprising a polyethylene, and polypropylene having a weight-average molecular weight of 6×105 or more and a fraction having a molecular weight of 1.8×106 or more being 10% or more by mass.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract: A microporous polyolefin membrane comprising a polyethylene resin, and polypropylene having a weight-average molecular weight of 6×105 or more and a heat of fusion of 90 J/g or more (measured by a differential scanning calorimeter), a fraction having a molecular weight of 1.8×106 or more being 10% or more by mass of the polypropylene.

Abstract: A microporous polyolefin membrane comprising a polyethylene resin, and polypropylene having a weight-average molecular weight of 6×105 or more and a heat of fusion of 90 J/g or more (measured by a differential scanning calorimeter), a fraction having a molecular weight of 5×104 or less being 5% or less by mass of the polypropylene.

Abstract: A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Abstract: A semiconductor device includes a pair of power chips, an IC chip, a plurality of leads one of which having a die pad on which the power chips are mounted and another one having a die attach portion on which the IC chip is mounted, a resin sheet firmly adhered to one side of the die pad, and a resin casing made by molding operation to encapsulate the power chips, the IC chip and the resin sheet by a resin in such a manner that one surface of the resin sheet opposite the die pad is exposed to the exterior of the resin casing. The resin casing has a groove formed in one surface opposite the exposed surface of the resin sheet, the groove extending parallel to the resin sheet and perpendicular to a runner through which the resin was supplied in the molding operation.

Abstract: A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.

Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.

Abstract: An emulsion composition of a modified polypropylene. It can have exceedingly improved emulsion stability because the modified polypropylene used has extremely high solubility in solvents and is easily emulsifiable. The modified-polypropylene emulsion composition comprises water and a modified polypropylene dispersed and emulsified therein, and is characterized in that the modified polypropylene has a racemic diad content [r] of 0.12 to 0.88 and has hydrophilic functional groups in a number of 0.5 or larger on the average per molecular chain of the polypropylene.

Abstract: A method for producing a modified polyolefin solution, which can reduce polymer loss, solvent loss and further number of steps, and thus has excellent productivity and economic efficiency in a series of steps, wherein an ?-olefin is polymerized to obtain a polyolefin, followed by modification with a modifying agent to produce a modified polyolefin solution, characterized by comprising a step wherein an ?-olefin is polymerized in the presence of polymerization catalyst in liquid phase to obtain a polyolefin as a polymer solution or slurry state and a step wherein thus obtained polymer is reacted with a modifying agent to modify a polyolefin, and in that the polymer is not isolated, not recovered, nor substantially dried, in a method for producing a modified polyolefin solution by modification, using a modification agent, of a polyolefin obtained by polymerization of an ?-olefin.

Abstract: A syndiotactic styrenic polymer having a narrow molecular weight distribution which is a (co)polymer comprising at least one structural unit represented by the following Formula (1): wherein C1 of a phenyl group thereof has a tacticity of 30% or more in terms of a racemic pentad determined by 13C-NMR, and Ra and m are as defined in the specification. The disclosure is also directed to a block copolymer comprising the above polymer as one segment, to a block graft polymer prepared by modifying one block of the above polymer with a nitrogen-containing aromatic polymer, and to a process for preparing a syndiotactic styrenic polymer in which a styrenic monomer is polymerized in the presence of a catalyst comprising a reaction product of a transition metal compound and at least one co-catalyst selected from organic aluminunoxy compounds.

Abstract: A modified polypropylene which is a polypropylene having a value of racemic diad fraction [r] in a specific range and modified with a specific compound, e.g., (meth)acrylic acids, and their derivatives or styrene derivatives to have well-balanced properties of affinity for polypropylene-based materials, thermal stability, and high solubility in organic solvents; and a process for producing same. More particularly, the modified polypropylene which is a polypropylene having a value of racemic diad fraction [r] of 0.51 to 0.88, determined by 13C-NMR analysis, and chemically modified with a compound serving as a modifier, e.g., (meth)acrylic acids, and their derivatives or styrene derivatives; and the process for producing the modified polypropylene, wherein the polypropylene having a value of racemic diad fraction [r] in the above range is reacted with at least one type of the compound serving as the modifier in the presence of a radical initiator.

Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.

Abstract: To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.

Abstract: A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

Abstract: A process for preparing olefinic living polymers having a molecular weight distribution (Mw/Mn) of 1 to 1.3, comprising polymerizing an olefinic monomer having 2 to 20 carbon atoms at low temperatures in the presence of a catalyst comprising (A) a hafnium or zirconium-containing compound having one or two cyclopentadienyl backbones, (B) a triphenyl boron compound or a tetraphenyl borate compound and optionally (C) a specific mono-, di- or trialkylaluminum compound. When the catalyst comprising the zirconium-containing compound is prepared by further using a titanium-containing compound (D), the polymerization temperature can be raised.

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).