Abstract: According to one embodiment, a memory system, such as a SDIO card, includes a nonvolatile semiconductor memory device, a control section, a memory, an extended function section, and an extension register. The extended function section is controlled by the control section. A first command reads data from the extension register in units of given data lengths. A second command writes data to the extension register in units of given data lengths. A extension register includes a first area, and second area different from the first area, information configured to specify a type of the extended function and controllable driver, and address information indicating a place to which the extended function is assigned, the place being on the extension register, are recorded in the first area, and the second area includes the extended function.

Abstract: According to one embodiment, a device includes a semiconductor memory and a controller. The semiconductor memory includes first and second areas which are accessible from an outside. The controller controls the semiconductor memory. The device includes an unlocked state where accessing the first area is allowed, and a locked state where the accessing the first area is prohibited. The device is capable of holding one or more user key in the device. The device includes a function of configuration operation to register, change, and delete the user key in the semiconductor memory.

Abstract: A device according to an example of the invention comprises a section which accepts a write destination logical address and write target data from a processor, the write destination logical address indicating a write position to write the write target data into a composite memory which includes a first memory and a nonvolatile second memory, a section which determines a write destination physical address corresponding to the write destination logical address so that the number of times of access to the second memory is smaller than the number of times of access to the first memory, a section which stores, in a storage section, address conversion data associating the write destination logical address with the write destination physical address, and a section which writes the write target data into a position in the composite memory indicated by the write destination physical address.

Abstract: A memory management device of an example of the invention controls writing into and reading from a main memory including a nonvolatile semiconductor memory and a volatile semiconductor memory in response to a writing request and a reading request from a processor. The memory management device includes a coloring information storage unit that stores coloring information generated based on a data characteristic of write target data to be written into at least one of the nonvolatile semiconductor memory and the volatile semiconductor memory, and a writing management unit that references the coloring information to determines a region into which the write target data is written from the nonvolatile semiconductor memory and the volatile semiconductor memory.

Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.

Abstract: An alkaline storage cell comprises a positive electrode including a cobalt additive and nickel hydroxide particles that have been covered by a cobalt compound film layer, and a negative electrode including a hydrogen-absorbing alloy that contains nickel and cobalt. The positive electrode has a capacitance V, the negative electrode has a capacitance W, the cobalt additive is cobalt metal or a cobalt compound, the positive electrode contains X mass % of the cobalt additive, the cobalt is included by Y mass % in the hydrogen-absorbing alloy, and X, Y, V, and W satisfy the relationship 1.1?(X/Y)×(W/V)?1.91.

Abstract: Provided is a thermocompression-bonding filament nonwoven fabric, which is inexpensive, has excellent molding properties and design properties, and is suitable as surface materials for automotive acoustic absorbing materials. The thermocompression-bonding filament nonwoven fabric comprising a polyester-based resin having a melting point of 250° C. or more, wherein the filament nonwoven fabric has a weight of 20 to 80 g/m2, a sum of 5% tensile loads in a MD and CD per weight of 1.0 to 1.9 (N/5 cm)/(g/m2), and a 180° C. dry heat shrinkage of 3.5% or less in both the MD and CD, and is not mechanically interlaced.

Abstract: According to one embodiment, an authenticatee includes, a memory configured to store secret information XY, secret information XY which is created by multiply duplicating, at least twice, the secret information XY, and secret information XYE, a generation module configured to generate a random number A, a generation module configured to generate a random number D which is composed of at least a part of the generated random number A and a random number B which is received, a calculating module configured to generate data C by executing a compression calculated operation with respect to at least a part of the random number D and the secret information XY loaded from the memory, a generation module configured to generate data ?, and a bit-by-bit addition module configured to calculate an calculated result Z from the data ? and the data C.

Abstract: According to one embodiment, a memory system, such as a SDIO card, includes a nonvolatile semiconductor memory device, a control section, a memory, an extended function section, and an extension register. The extended function section is controlled by the control section. A first command reads data from the extension register in units of given data lengths. A second command writes data to the extension register in units of given data lengths. A extension register includes a first area, and second area different from the first area, information configured to specify a type of the extended function and controllable driver, and address information indicating a place to which the extended function is assigned, the place being on the extension register, are recorded in the first area, and the second area includes the extended function.

Abstract: A digital content protection method includes distributing, together with an encrypted content, an encrypted protected program key, a protected content key, and a protected code including an individual instruction code, at least some elements of which are designed according to a unique operation code specification for each content player or for each content player group.

Abstract: According to one embodiment, an authenticatee includes a memory configured to store a plurality of pieces of secret information XY and a plurality of pieces of secret information XYE which are created by encrypting the plurality of pieces of secret information XY, a generation module configured to generate a random number A, a generation module configured to generate a random number D which is composed of at least a part of the generated random number A and a random number B which is received, a calculating module configured to generate data C by executing a compression operation with respect to at least the random number D and the secret information XY loaded from the memory, a generation module configured to generate data ?, and a bit-by-bit addition module configured to calculate an result Z from the data ? to the data C.

Abstract: A recording device configured to store content data in an encrypted manner, the recording device comprises a memory unit which stores various data, and a controller which controls the memory unit. The controller possesses a controller key and unique identification information, and is configured to generate a controller-unique key unique for each controller in accordance with the controller key and the identification information. The memory unit stores an MKB generated by encrypting a medium key with a device key set that is a collection of a plurality of device keys, an encrypted device key set generated by encrypting the device key set with the controller-unique key, and a device-key-set index which uniquely identifies the device key set.

Abstract: According to one embodiment, a memory chip, which is connected to a controller that controls reading and writing of data in response to a request from an external device, includes: a memory including a special area that is a predetermined data storage area; a key storage unit that stores therein a second key that corresponds to a first key used by the external device to convert the data; a converting unit that receives, from the controller, data to be written into the special area and generates converted data by converting the data to be written using the second key; and a writing unit that writes the converted data into the special area.

Abstract: According to one embodiment, a memory system, such as a SDIO card, includes a nonvolatile semiconductor memory device, a control section, a memory, an extended function section, and an extension register. The extended function section is controlled by the control section. A first command reads data from the extension register in units of given data lengths. A second command writes data to the extension register in units of given data lengths. A extension register includes a first area, and second area different from the first area, information configured to specify a type of the extended function and controllable driver, and address information indicating a place to which the extended function is assigned, the place being on the extension register, are recorded in the first area, and the second area includes the extended function.

Abstract: A recording device configured to store content data in an encrypted manner, the recording device comprises a memory unit which stores various data, and a controller which controls the memory unit. The controller possesses a controller key and unique identification information, and is configured to generate a controller-unique key unique for each controller in accordance with the controller key and the identification information. The memory unit stores an MKB generated by encrypting a medium key with a device key set that is a collection of a plurality of device keys, an encrypted device key set generated by encrypting the device key set with the controller-unique key, and a device-key-set index which uniquely identifies the device key set.

Abstract: According to one embodiment, a memory chip, which is connected to a controller that controls reading and writing of data in response to a request from an external device, includes: a memory including a special area that is a predetermined data storage area; a key storage unit that stores therein a second key that corresponds to a first key used by the external device to convert the data; a converting unit that receives, from the controller, data to be written into the special area and generates converted data by converting the data to be written using the second key; and a writing unit that writes the converted data into the special area.

Abstract: According to one embodiment, an authenticatee includes, a memory configured to store secret information XYmain, XYsub, and secret information XYmainE, XYsubE, a generation module configured to generate a random number A, a generation module configured to generate a random number D which is composed of at least a part of the generated random number A and a random number B which is received, a generation module configured to generate secret information XY based on the secret information XYmain, XYsub loaded from the memory, a calculating module configured to generate data C by executing a compression calculated operation with respect to at least a part of the random number D and the secret information XY, a generation module configured to generate data ?, and a bit-by-bit addition module configured to calculate an calculated result Z from the data ? and the data C.

Abstract: In an optical semiconductor package, a method of manufacturing the same, and an optical semiconductor device according to the present invention, a thermosetting resin such as an unsaturated polyester resin is used for a reflector 5 or resin 6 exposed around an optical semiconductor element, thereby suppressing deterioration of resin and a reduction in reflectivity.

Abstract: The purpose of the present invention is to obtain a spunbonded nonwoven fabric, which comprises a single-component polyester-based fibers, having a high basis weight and a high rigidity by embossing, which is difficult to attain in the conventional art. Further, the present invention provides a filter base material having excellent pleatability, pleat retention property and durability, and a filter using thereof. The present spunbonded nonwoven fabric is obtained by subjecting a deposited fiber assembly to a thermocompression bonding by embossing with a pair of an embossing roll and a flat metal roll, and has a basis weight of 150 to 400 g/m2, a longitudinal bending repulsion of 20 to 60 mN and a longitudinal tensile strength of 400 N/5 cm or more.

Abstract: A positive electrode for a lithium secondary battery provided by the present invention includes an electrically conductive layer and an active material layer on a surface of a positive electrode current collector. The electrically conductive layer contains at least one type of water-insoluble polymer that is soluble in an organic solvent as a binder, the active material layer contains at least one type of water-soluble and/or water-dispersible polymer that dissolves or disperses in water as a binder, and a mass ratio (B/A) of mass (B) per unit surface area of the binder in the active material layer to mass (A) per unit surface area of the binder in the electrically conductive layer satisfies a relationship of 0.06?B/A?0.35.