Abstract: Provided is a charged particle beam device to enable determination of a noise source of a charged particle beam device that can cause a noise frequency component superimposed on a measurement image. The charged particle beam device includes a unit that extracts information regarding a noise source.

Abstract: The subject in the past is that there are a large number of data wirings in a semiconductor device including multiple memory cell arrays and that the area occupied by the data wirings is large. In a selected memory cell array among multiple memory cell arrays, a data wiring functions as a local wiring that transmits the data of the selected memory cell. In a memory cell array that is not selected among the memory cell arrays and is located between a data circuit and the selected memory cell array, the data wiring functions as a global wiring that transmits the data of a memory cell of the selected memory cell array.

Abstract: There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.

Abstract: A low noise blanking unit corresponds to a wide range of acceleration voltages (from several times higher than related voltages to low acceleration voltages) of an electron beam. A blanking unit of the measurement and inspection device includes a blanking control circuit, in which (i) an upper and a lower blanking electrodes are arranged in the irradiation direction of an electron beam; electrodes on the reverse sides of two opposing electrodes in each of the blanking electrodes arranged in the same direction are connected with the ground, (ii) when blanking is ON, positive voltages are output to remaining electrodes of the upper blanking electrode and negative voltages are output to remaining electrodes of the lower blanking electrode, and (iii) when the blanking is OFF, the same ground reference signal is output to the remaining electrodes of the upper blanking electrode and to the remaining electrodes of the lower blanking electrode.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A torsion beam type of rear suspension comprising a pair of right-and-left trailing arms and a torsion beam connecting the trailing arms is provided. A floor under cover for airflow straightening is attached to a portion of a vehicle body in front of the rear suspension so as to cover a vehicle-body lower face. A arm cover is attached to a lower portion of the trailing arm so as to cover a lower face of the trailing arm. The arm cover is provided with an arm-cover enlarged portion which is configured to protrude outwardly, in a vehicle width direction, from the trailing arm in a vehicle bottom-face view. The floor under cover is provided with a floor-under-cover enlarged portion such that a rear end portion of the floor under cover faces closely to a front edge of the arm-cover enlarged portion.

Abstract: An arm cover comprises a main part and a front part. These parts are configured such that when the rear suspension takes a standard vehicle-weight position, these parts are respectively inclined rearwardly and downwardly, wherein an angle of inclination of the inclined front part is smaller than that of the inclined main part. When the rear suspension takes the standard vehicle-weight position, a front edge of the front part is located at a higher level than a bottom face portion of a under cover, and when the rear suspension takes a rebound position, the front edge of the front part is located at a position which is higher than a level of the bottom face portion of the under cover and close to a rear end portion of the under cover.

Abstract: A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit.

Abstract: An electrochromic element is provided. The electrochromic element includes a first electrode, a second electrode facing the first electrode with a gap therebetween, and a color developing layer disposed between the first electrode and the second electrode. The color developing layer includes an electrochromic compound that develops and discharges color by a redox reaction and a compound having an adsorption group adsorptive to the first electrode.

Abstract: Provided are a method for producing a tread rubber member that can improve low heat generation properties while maintaining workability and tear resistance, and a tire production method. A method for producing a tread rubber member, having a step for kneading a diene rubber, carbon black, a compound represented by the following formula (1) (in the formula, R1 and R2 represent a hydrogen atom, an alkyl group, an alkenyl group or an alkynyl group, and M+, is Na+, K+ or Li+) and zinc flower, and a step for adding silica to the kneaded product obtained in the above step, followed by kneading.

Abstract: In order to improve visibility of a measurement/inspection image in an inspection measurement apparatus inspecting or measuring a fine pattern, a charged particle beam device is configured to include a charged particle optical system that irradiates a surface of a sample with a converged charged particle beam so as to perform scanning, a detection unit that detects secondary charged particles generated from the sample irradiated with the charged particle beam by the charged particle optical system, an image forming unit that receives a detection signal from the detection unit and forms an image of the sample, an image processing unit that processes the image formed in the image forming unit, and a display unit that displays a result processed by the image processing unit, in which the image forming unit includes an analog signal processing portion that processes an analog signal component of the detection signal in the detection unit so as to form an image, a pulse count method signal processing portion that

Abstract: Provided are a base tread rubber member that can improve low heat generation properties while maintaining tear resistance and a pneumatic tire using the same. A base tread rubber member comprising a rubber composition containing 100 parts by mass of a diene rubber, 10 to 70 parts by mass of carbon black having a nitrogen adsorption specific surface area of 20 to 80 m2/g, 1 to 10 parts by mass of silica having a nitrogen adsorption specific surface area of 80 to 200 m2/g and 0.1 to 10 parts by mass of a compound represented by the formula (I) (in the formula (I), R1 and R2 represent a hydrogen atom, an alkyl group, an alkenyl group or an alkynyl group, and M+ is Na+, K+ or Li+).

Abstract: An electrochromic element is provided that includes a first substrate and a second substrate that are arranged to oppose each other, a first transparent electrode that is formed on a surface of the first substrate facing the second substrate, a second transparent electrode that is formed on a surface of the second substrate facing the first substrate, and a coloration layer that is arranged between the first transparent electrode and the second transparent electrode. The coloration layer includes an electrochromic material and an electrolyte, and a pattern or a concentration gradient of the electrochromic material is formed in at least a part of the coloration layer.

Abstract: In a first mode, when a movement operation for a moving body is performed, then based on at least one of the movement operation and an operations performed together with the movement operation, a movement parameter for a moving body object is determined, and in a second mode, based on data indicating a marker-indicated position movement operation, a target position of the moving body object indicated by a marker is changed, and the movement parameter for the moving body object is determined based on the target position. Then, when the movement operation is performed, the moving body object is moved based on the determined movement parameter, and an image of a virtual space is generated.

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: A semiconductor device is provided that operates at improved write speeds without an increase in area. The semiconductor device according to the invention includes a plurality of memory cells arranged in a matrix of rows and columns, a plurality of word lines provided to each row of the memory cells, a plurality of bit line pairs provided to each column of the memory cells, sense amplifiers that amplify the potential difference in the bit line pairs, data line pairs that transfer data to the bit line pairs, column selection circuits that permit receiving the data from the data line pairs, a column decoder that transmits column selection signals to the column selection circuits, and a sense amplifier control circuit that activates the sense amplifiers after the column decoder transmits the column selection signals to the column selection circuits.

Abstract: A fuel supply device may include a pump case configured to accommodate a fuel pump, a reserve tank, and an elastic support member configured to elastically support the pump case with respect to the reserve tank. The elastic support member is connected to the pump case and the reserve tank via a first connection device and a second connection device, respectively. The first connection device is configured to pivotally connect the elastic support member to the pump case and/or the second connection device is configured to pivotally connect the elastic support member to the reserve tank.

Abstract: A semiconductor device which reduces power consumption. In the semiconductor device, semiconductor chips are stacked over a base chip. The stacked chips include n through-silicon vias as a first group and m through-silicon vias as a second group. In each of the first and second groups, the through-silicon vias are coupled by a shift circular method, in which the 1st to (n?1)th ((m?1)th) through-silicon vias of a lower chip are coupled with the 2nd to n-th (m-th) through-silicon vias of an upper chip respectively and the n-th (m-th) through-silicon via of the lower chip is coupled with the 1st through-silicon via of the upper chip. n and m have only one common divisor. Activation of the stacked semiconductor chips is controlled by combination of a first selection signal transmitted through through-silicon vias of the first group and a second selection signal transmitted through through-silicon vias of the second group.