Abstract: The antioxidant according to the present invention contains a polyurethane compound represented by the following formula (1): (wherein Y1 is a residue of a diol, and plural Y1s may be the same or different, R1 is a residue of an aromatic diisocyanate, and plural R1s may be the same or different, X1 is a residue of a hindered phenol compound having at least k hindered phenolic hydroxyl groups, and plural X1s may be the same or different, m is an integer of 1 or more, n is an integer of 1 or more, and k is an integer of 2 or more).

Abstract: The antioxidant according to the present invention contains a polyurethane compound represented by the following formula (1): (wherein Y1 is a residue of a diol, and plural Y1s may be the same or different, R1 is a residue of an aromatic diisocyanate, and plural R1s may be the same or different, X1 is a residue of a hindered phenol compound having at least k hindered phenolic hydroxyl groups, and plural X1s may be the same or different, m is an integer of 1 or more, n is an integer of 1 or more, and k is an integer of 2 or more).

Abstract: A chemical mechanical polishing pad includes a polishing layer formed using a composition that includes a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15 to 1.30, and a durometer D hardness of 50 to 80.

Abstract: A chemical mechanical polishing pad which has a storage elastic modulus E?(30° C.) at 30° C. of 120 MPa or less and an (E?(30° C.)/E?(60° C.)) ratio of the storage elastic modulus E?(30° C.) at 30° C. to the storage elastic modulus E?(60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

Abstract: The present invention relates to a method of manufacturing a chemical mechanical polishing pad which provides a chemical mechanical polishing pad which fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate.

Abstract: The present invention relates to a method of manufacturing a chemical mechanical polishing pad which provides a chemical mechanical polishing pad which fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate.

Abstract: A chemical mechanical polishing pad which has a storage elastic modulus E? (30° C.) at 30° C. of 120 MPa or less and an (E? (30° C.)/E? (60° C.)) ratio of the storage elastic modulus E? (30° C.) at 30° C. to the storage elastic modulus E? (60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad having a polishing surface, a non-polishing surface opposite to the polishing surface and a side surface for defining these surfaces, the polishing surface having (i) a first group of grooves which intersect a single virtual straight line extending from the center toward the peripheral portion of the polishing surface and do not cross one another, or a single first spiral groove which expands gradually from the center portion toward the peripheral portion of the polishing surface, and (ii) a second group of grooves which extend from the center portion toward the peripheral portion of the polishing surface, intersect the first group of grooves or the first spiral groove and do not cross one another. Since this chemical mechanical polishing pad fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate, it is advantageously used in a chemical mechanical polishing method.