Abstract: An infrared shielding film-coated glass comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises a first film layer formed in a thickness of from 0.2 to 2 ?m on the surface of the glass substrate and having transparent electroconductive oxide fine particles having an average primary particle diameter of at most 100 nm dispersed in a silicon oxide matrix in a mass ratio of transparent electroconductive oxide fine particles/silicon oxide=10/0.5 to 10/20, and a second film layer laminated in a thickness of from 0.02 to 0.2 ?m on the first film layer and comprising silicon oxide, silicon oxynitride or silicon nitride, and the increase in haze by abrasion after a 1000 rotation test by a CS-10F abrasive wheel in accordance with the abrasion resistance test stipulated in JIS R3212 (1998) is at most 5%.

Abstract: An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide as the main component and containing nitrogen in an amount of at least 2 at % based on Si and has a film thickness of from 200 to 3,000 nm.

Abstract: It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of Bi2O3, from 4 to 64% of TiO2 and from 6 to 50% of B2O3, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

Abstract: To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Abstract: An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide and titanium oxide and has a film thickness of from 100 to 1,500 nm.

Abstract: It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba2+, Sr2+, Ca2+, Pb2+, La3+, K+ and Na+, and B is at least one member selected from the group consisting of Ti4+, Zr4+, Nb5+, Ta5+ and Fe3+) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.

Abstract: The present invention provides a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. A liquid composition for forming a ferroelectric thin film is used, which is characterized by comprising a liquid medium, crystalline ferroelectric oxide particles represented by the formula (Bi2O2)2+(Bim-1TimO3.5m-0.5)2? (wherein m is an integer of from 1 to 5) or (Bi2O2)2+(Am-1TimO3.5m-0.5)2? (wherein A is Bi3+ or La3+, the La3+/Bi3+ ratio is from 0.05 to 0.5, and m is an integer of from 1 to 5) and having an average primary particle diameter of at most 100 nm, dispersed in the liquid medium, and a soluble metal compound capable of forming a ferroelectric oxide by heating, dissolved in the liquid medium.

Abstract: It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba2+, Sr2+, Ca2+, Pb2+, La2+, K+ and Na+, and B is at least one member selected from the group consisting of Ti4+, Zr4+, Nb5+, Ta5+ and Fe3+) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.

Abstract: It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based on oxides, from 23 to 72% of Bi2O3, from 4 to 64% of TiO2 and from 6 to 50% of B2O3, a step of quickly quenching this melt to obtain an amorphous material, a step of crystallization of bismuth titanate crystals from the above amorphous material, and a step of separating the bismuth titanate crystals from the obtained crystallized material, in this order.

Abstract: To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.

Abstract: An infrared shielding glass coated with an infrared shielding film which is excellent in heat resistance and exhibits high visible light transmittance, low infrared transmittance (especially infrared transmittance in a near infrared region) and high electromagnetic wave transmittance. An infrared shielding glass comprising a glass substrate having at least one surface thereof coated with a coating liquid containing fine particles of conductive oxide and a matrix component to thereby provide an infrared shielding film, characterized in that the infrared shielding glass exhibits a transmittance at a wavelength of 1.0 ?m of at most 35% and a transmittance at a wavelength of 2.0 ?m of at most 20% and that the infrared shielding film has a surface resistivity of at least 1 M?/?.

Abstract: An infrared shielding film-coated glass comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises a first film layer formed in a thickness of from 0.2 to 2 ?m on the surface of the glass substrate and having transparent electroconductive oxide fine particles having an average primary particle diameter of at most 100 nm dispersed in a silicon oxide matrix in a mass ratio of transparent electroconductive oxide fine particles/silicon oxide=10/0.5 to 10/20, and a second film layer laminated in a thickness of from 0.02 to 0.2 ?m on the first film layer and comprising silicon oxide, silicon oxynitride or silicon nitride, and the increase in haze by abrasion after a 1000 rotation test by a CS-10F abrasive wheel in accordance with the abrasion resistance test stipulated in JIS R3212 (1998) is at most 5%.

Abstract: A photochromic glass excellent in coloration/color fading characteristics, which comprises a glass substrate and a photochromic film formed on the glass substrate, wherein the photochromic film comprises at least one metal selected from the group consisting of platinum, palladium, iridium, rhodium and gold, copper, silver halide crystallites and silicon oxide, and a process for its production.

Abstract: A ultraviolet ray absorbent glass comprises a substrate glass, a ultraviolet ray absorbent film including as the major component at least one selected from the group consisting of zinc oxide, titanium oxide and cerium oxide, and an intermediate film having an intermediate refractive index which is between the refractive indices of the ultraviolet absorbent film and the substrate glass, the intermediate film being located between the ultraviolet absorbent film and the substrate glass, whereby iridescence by the ultraviolet ray absorbent film is reduced, and a heat reflecting function is imparted.