Patents by Inventor Hiroyuki Yokoyama
Hiroyuki Yokoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8615027Abstract: A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region.Type: GrantFiled: July 14, 2009Date of Patent: December 24, 2013Assignees: Sony Corporation, Tohoku UniversityInventors: Makoto Oota, Hiroyuki Yokoyama, Masaru Kuramoto, Masao Ikeda
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Patent number: 8588264Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.Type: GrantFiled: August 18, 2011Date of Patent: November 19, 2013Assignees: Sony Corporation, Tohoku UniversityInventors: Hiroyuki Yokoyama, Shunsuke Kono, Tomoyuki Oki, Masao Ikeda, Takao Miyajima, Hideki Watanabe
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Patent number: 8575626Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.Type: GrantFiled: July 19, 2012Date of Patent: November 5, 2013Assignees: Sony Corporation, Tohoku UniversityInventors: Hideki Watanabe, Takao Miyajima, Masao Ikeda, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto
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Patent number: 8483256Abstract: A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1<Wmax/Wmin<3.3 or 6?Wmax/Wmin?13.3.Type: GrantFiled: March 12, 2012Date of Patent: July 9, 2013Assignees: Sony Corporation, Tohoku UniversityInventors: Tomoyuki Oki, Masaru Kuramoto, Rintaro Koda, Hideki Watanabe, Hiroyuki Yokoyama
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Patent number: 8442079Abstract: Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm?3 or more and 1×1020 cm?3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.Type: GrantFiled: February 25, 2011Date of Patent: May 14, 2013Assignees: Sony Corporation, Tohoku UniversityInventors: Tomoyuki Oki, Masaru Kuramoto, Masao Ikeda, Takao Miyajima, Hideki Watanabe, Hiroyuki Yokoyama
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Publication number: 20120314147Abstract: The microscope apparatus includes a light source which outputs linear polarization having a first wavelength, a polarization conversion element which includes a liquid crystal layer, and by causing linear polarization to pass the liquid crystal layer, converts linear polarization to radial polarization, an objective lens which focuses the radial polarization onto an object surface, a condenser lens which collimates the light reflected from the object surface, a light receiving element which receives light collimated by the condenser lens and outputs signal in accordance with the intensity of light, and a controller which applies electric voltage in accordance with the first wavelength to the liquid crystal layer of the polarization conversion element. The polarization conversion element is disposed in the pupil plane of the objective lens on the light source side.Type: ApplicationFiled: February 24, 2011Publication date: December 13, 2012Applicant: Citizen Holdings Co., Ltd.Inventors: Shunichi Sato, Yuichi Kozawa, Hiroyuki Yokoyama, Tomomi Nemoto, Terumasa Hibi, Nobuyuki Hashimoto, Makoto Kurihara
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Patent number: 8329483Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.Type: GrantFiled: March 18, 2010Date of Patent: December 11, 2012Assignees: Sony Corporation, Tohoku UniversityInventors: Hideki Watanabe, Takao Miyajima, Masao Ikeda, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto
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Publication number: 20120281726Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.Type: ApplicationFiled: July 19, 2012Publication date: November 8, 2012Applicants: Tohoku University, Sony CorporationInventors: Hideki Watanabe, Takao Miyajima, Masao Ikeda, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto
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Patent number: 8290005Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.Type: GrantFiled: August 18, 2011Date of Patent: October 16, 2012Assignees: Sony Corporation, Tohoku UniversityInventors: Hiroyuki Yokoyama, Shunsuke Kono, Tomoyuki Oki, Masao Ikeda, Takao Miyajima, Hideki Watanabe
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Publication number: 20120236886Abstract: A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1<Wmax/Wmin<3.3 or 6?Wmax/Wmin?13.3.Type: ApplicationFiled: March 12, 2012Publication date: September 20, 2012Applicants: TOHOKU UNIVERSITY, SONY CORPORATIONInventors: Tomoyuki Oki, Masaru Kuramoto, Rintaro Koda, Hideki Watanabe, Hiroyuki Yokoyama
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Publication number: 20120201259Abstract: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at ?WG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle ?SM=sin?1 [nLE·sin(?WG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.Type: ApplicationFiled: February 2, 2012Publication date: August 9, 2012Applicants: Tohoku University, Sony CorporationInventors: Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, Kaori Naganuma, Hiroyuki Yokoyama
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Publication number: 20120147917Abstract: A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1<W2/WMIN is satisfied.Type: ApplicationFiled: December 2, 2011Publication date: June 14, 2012Applicants: Tohoku University, Sony CorporationInventors: Tomoyuki Oki, Hideki Watanabe, Rintaro Koda, Masaru Kuramoto, Hiroyuki Yokoyama
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Patent number: 8173109Abstract: An eyelash cosmetic according to present invention, by blending (a) wax and/or (b) resin, and (c) hollow powder, can impart a voluminous feeling and, at the same time, perform excellent curling effect and curl retaining effect, and excellent usability such as easiness eyelash coating, and easiness overlaying, and also perform excellent uniformity of finishing, water resistance and oil resistance after coating.Type: GrantFiled: October 12, 2009Date of Patent: May 8, 2012Assignee: Shiseido Co., Ltd.Inventors: Atsumi Mori, Hideki Takahashi, Satoshi Tomomasa, Hiroyuki Yokoyama
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Publication number: 20120099185Abstract: A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element. A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.Type: ApplicationFiled: September 29, 2011Publication date: April 26, 2012Applicants: TOHOKU UNIVERSITY, SONY CORPORATIONInventors: Hiroyuki Yokoyama, Shunsuke Kono, Masaru Kuramoto
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Publication number: 20120099610Abstract: A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.Type: ApplicationFiled: October 6, 2011Publication date: April 26, 2012Applicants: Tohoku University, SONY CORPORATIONInventors: Shunsuke Kono, Hiroyuki Yokoyama, Masaru Kuramoto, Tomoyuki Oki
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Patent number: 8116343Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.Type: GrantFiled: March 14, 2011Date of Patent: February 14, 2012Assignees: Sony Corporation, Tohoku UniversityInventors: Hiroyuki Yokoyama, Shunsuke Kono, Tomoyuki Oki, Masao Ikeda, Takao Miyajima, Hideki Watanabe
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Patent number: 8111723Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.Type: GrantFiled: July 21, 2009Date of Patent: February 7, 2012Assignees: Sony Corporation, Tohoku UniversityInventors: Hiroyuki Yokoyama, Shunsuke Kono, Tomoyuki Oki, Masao Ikeda, Takao Miyajima, Hideki Watanabe
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Patent number: 8092834Abstract: A complex powder comprising an adsorption site and operation site, wherein said adsorption site attracts or adsorbs a specific enzyme, wherein said operation site inhibits or activates said enzyme, and wherein each of the both sites are appeared on the surface of the powder. In the complex powder described above, it is preferable that ?-potential of the adsorption site at the pH employed is negative value, wherein said adsorption site attracts or adsorbs the specific enzyme whose ?-potential is positive value, and wherein said adsorption site inhibits or activates said specific enzyme. And it is preferable that said adsorption site has ?-potential at pH7.5 of ?10 mV or below. In the complex powder described above, it is preferable that said specific enzyme is a plasminogen activator, and the operation site inhibits said plasminogen activator. The complex powder described above can be used as an external composition for improving a rough skin and an external composition for a sensitive skin.Type: GrantFiled: June 28, 2002Date of Patent: January 10, 2012Assignee: Shiseido Co., Ltd.Inventors: Norinobu Yoshikawa, Kenichi Sakuma, Katsuki Ogawa, Satoshi Tomomasa, Eriko Kawai, Hiroyuki Yokoyama, Yukimitsu Suda
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Publication number: 20120002271Abstract: A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.Type: ApplicationFiled: June 23, 2011Publication date: January 5, 2012Applicants: Tohoku University, SONY CORPORATIONInventors: Masaru Kuramoto, Masao Ikeda, Rintaro Koda, Tomoyuki Oki, Hideki Watanabe, Takao Miyajima, Hiroyuki Yokoyama
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Publication number: 20120002695Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.Type: ApplicationFiled: August 18, 2011Publication date: January 5, 2012Applicant: SONY CORPORATIONInventors: Hiroyuki Yokoyama, Shunsuke Kono, Tomoyuki Oki, Masao Ikeda, Takao Miyajima, Hideki Watanabe