Abstract: The invention provides a composition capable of providing an electric wire with small fluctuations in the wire diameter. The composition includes a modified polytetrafluoroethylene (A) having a cylinder extrusion pressure of 80 MPa or lower at a reduction ratio of 1600 and a non-fibrillatable low-molecular-weight polytetrafluoroethylene (B).

Abstract: The invention provides a method for producing an electric wire with a low dielectric loss. The method for producing an electric wire includes a coating step of coating a core wire with a mixture of a high-molecular-weight polytetrafluoroethylene (A) and a non-fibrillatable low-molecular-weight polytetrafluoroethylene (B); a first heating step of heating the coated core wire up to the first melting point of the low-molecular-weight polytetrafluoroethylene (B) or higher; a second heating step of heating the coated core wire to 150° C. to 300° C.; and a cooling step of cooling the coated core wire.

Abstract: The present invention provides a dielectric waveguide having excellent transmission efficiency. The dielectric waveguide includes a polytetrafluoroethylene molded article that has a permittivity of 2.05 or higher at 2.45 GHz or 12 GHz, a loss tangent of 1.20×10?4 or lower at 2.45 GHz or 12 GHz, and a hardness of 95 or higher.

Abstract: A semiconductor device has an active region in which a plurality of unit cells are regularly arranged, each of the unit cells including: a channel region having a first conductivity type and formed over a front surface of a semiconductor substrate; a source region having a second conductivity type different from the first conductivity type and formed over the front surface of the semiconductor substrate in such a manner as to be in contact with the channel region; and a JFET region having the second conductivity type and is formed over the front surface of the semiconductor substrate on the opposite side of the channel region from the source region in such a manner as to be in contact with the channel region. The channel region is comprised of a first channel region and a second channel region higher than the first channel region in impurity concentration, over the front surface of the semiconductor substrate.

Abstract: An impact absorbing member is provided below a fascia upper member (upper-face forming member) which forms an upper face of a front end portion of a vehicle. The impact absorbing member comprises a front side part which includes a front wall portion, a top wall portion, and a rear wall portion so as to have a U-shaped cross section opening downward and a flat-plate shaped rear side part which extends rearward from a lower end of the rear wall portion. A rear end portion of the rear side part is held at a radiator shroud as a vehicle-body-side member, and the rear side part is configured to slant obliquely forward and downward.

Abstract: The present invention provides a modified polytetrafluoroethylene fine powder which can be processed into molded articles high in thermal stability, chemical resistance and transparency and for which the extrusion pressure can be lowered. The present invention is a modified polytetrafluoroethylene fine powder, wherein the cylinder extrusion pressure at a reduction ratio of 1600 is not higher than 50 MPa and the haze value of molded article a for measurement formed therefrom is not higher than 60.

Abstract: Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.

Abstract: The present invention aims to provide a paste containing polytetrafluoroethylene which can be formed into a molded polytetrafluoroethylene article having a significantly small thickness of polytetrafluoroethylene and is less likely to cause defects in molding; and a method of producing the paste. The present invention provides a method of producing a paste, including the steps of coagulating primary particles of polytetrafluoroethylene in an aqueous dispersion that contains the primary particles and water to form slurry that contains secondary particles of polytetrafluoroethylene and water or secondary particles of polytetrafluoroethylene floating in water; and adding an organic solvent to at least one of the slurry and the secondary particles of polytetrafluoroethylene floating in water to provide the paste.

Abstract: An IGBT (50) includes a p+ collector region (3) and an n?? drift region (1), in which a first transistor (TR1) and a second transistor (TR2) are formed on the n?? drift region (1). In the n?? drift region (1), a p-type hole extraction region (14) is formed in contact with the second transistor (TR2). When the IGBT (50) is in an on-state, electrons and holes flow through the first transistor (TR1), but a current does not flow through the second transistor (TR2). On the other hand, when the IGBT (50) is switched from the on-state to an off-state, holes flow through the first transistor (TR1), and holes flow through the hole extraction region (14) and the second transistor (TR2).

Abstract: An IGBT (50) includes a p+ collector region (3) and an n?? drift region (1), in which a first transistor (TR1) and a second transistor (TR2) are formed on the n?? drift region (1). In the n?? drift region (1), a p-type hole extraction region (14) is formed in contact with the second transistor (TR2). When the IGBT (50) is in an on-state, electrons and holes flow through the first transistor (TR1), but a current does not flow through the second transistor (TR2). On the other hand, when the IGBT (50) is switched from the on-state to an off-state, holes flow through the first transistor (TR1), and holes flow through the hole extraction region (14) and the second transistor (TR2).

Abstract: The present invention provides a modified polytetrafluoroethylene fine powder which can be processed into molded articles high in thermal stability, chemical resistance and transparency and for which the extrusion pressure can be lowered. The present invention is a modified polytetrafluoroethylene fine powder, wherein the cylinder extrusion pressure at a reduction ratio of 1600 is not higher than 50 MPa and the haze value of molded article a for measurement formed therefrom is not higher than 60.

Abstract: A metal-clad laminate, including metal foil, and a first resin layer arranged on the metal foil, the first resin layer including an epoxy resin and a fluoropolymer with a curable functional group. Also disclosed is a method of producing the metal-clad laminate.

Abstract: The present invention provides a modified polytetrafluoroethylene fine powder which can be processed into molded articles high in thermal stability, chemical resistance and transparency and for which the extrusion pressure can be lowered. The present invention is a modified polytetrafluoroethylene fine powder, wherein the cylinder extrusion pressure at a reduction ratio of 1600 is not higher than 50 MPa and the haze value of molded article a for measurement formed therefrom is not higher than 60.

Abstract: Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.

Abstract: Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.

Abstract: The present invention aims to provide a sheet having high conductivity in the thickness direction and excellent breathability, water repellency, corrosion resistance, and flexibility so as to be suitably used for an electrode of fuel cells and the like. The present invention also aims to provide an electrode and a fuel cell. The present invention provides a sheet containing polytetrafluoroethylene, carbon black, and graphite, the polytetrafluoroethylene having a standard specific gravity of 2.14 to 2.28, a total amount of the carbon black and the graphite being more than 35% by mass of a total amount of the polytetrafluoroethylene, the carbon black, and the graphite.

Abstract: A trench groove is formed and a silicon oxide film is buried in the periphery of a channel region of (0001) surface 4h-SiC semiconductor element. The oxide film in the trench groove is defined in such a planar layout that a tensile strain is applied along the direction of the c-axis and a compressive strain is applied along two or more of axes on a plane perpendicular to the c-axis. For example, trench grooves buried with an oxide film may be configured to such a layout that they are in a trigonal shape surrounding the channel, or are arranged symmetrically with respect to the channel as a center when arranged discretely.

Abstract: The present invention provides a polytetrafluoroethylene powder having moldability/processability as well as electrical characteristics in microwave bands. The present invention is a modified polytetrafluoroethylene powder which has (1) a dielectric loss tangent at 12 GHz of not higher than 2.0×10?4 and (2) a cylinder extrusion pressure of not higher than 45 MPa at a reduction ratio of 1600.

Abstract: A variable duct apparatus that controls outside air flowing in to a radiator includes a variable louver that is provided so as to extend in the vehicle width direction between a grille opening and a radiator of a vehicle, and regulates the amount of outside air admitted to the radiator, a lower louver that is provided so as to extend in the vehicle width direction between an air inlet and the radiator, and regulates the amount of outside air admitted to the radiator, and a link mechanism that coordinates and synchronizes the variable louver and the lower louver with each other, and interrupts the coordination between the variable louver and the lower louver upon application of an external force to the lower louver to thereby permit swinging of the lower louver.

Abstract: The present invention aims to provide a laminate in which a metal and a fluoropolymer are directly and firmly attached to each other. The present invention relates to a laminate including a layer (A) including a metal, and a layer (B) formed on the layer (A), wherein the layer (B) includes a copolymer containing a polymer unit based on tetrafluoroethylene and a polymer unit based on a perfluoro(alkyl vinyl ether), the copolymer contains a carboxyl group at a terminus of a main chain and has a melt flow rate of not lower than 20 g/10 min and a melting point of not higher than 295° C., and the metal is at least one selected from the group consisting of copper, stainless steel, aluminum, iron, and an alloy thereof.