Patents by Inventor Hisanao Tsuge
Hisanao Tsuge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7638797Abstract: Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.Type: GrantFiled: May 20, 2008Date of Patent: December 29, 2009Assignee: Samsung Mobile Display Co., Ltd.Inventors: Tomohisa Gotoh, Noriko Takewaki, Hisanao Tsuge, Atsushi Kamijo, Satoru Toguchi
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Publication number: 20080265245Abstract: Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.Type: ApplicationFiled: May 20, 2008Publication date: October 30, 2008Applicant: SAMSUNG SDI CO., LTD.Inventors: Tomohisa GOTOH, Noriko TAKEWAKI, Hisanao TSUGE, Atsushi KAMIJO, Satoru TOGUCHI
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Patent number: 7391048Abstract: Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a s second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.Type: GrantFiled: June 7, 2004Date of Patent: June 24, 2008Assignee: Samsung SDI Co., Ltd.Inventors: Tomohisa Gotoh, Noriko Takewaki, Hisanao Tsuge, Atsushi Kamijo, Satoru Toguchi
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Patent number: 7372673Abstract: In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.Type: GrantFiled: May 31, 2005Date of Patent: May 13, 2008Assignee: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Tsutomu Ishi, Hiroaki Honjou, Kunihiko Ishihara, Jun-Ichi Fujikata, Hisao Matsutera, Hisanao Tsuge, Atsushi Kamijo
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Patent number: 7180235Abstract: A first layer having a refractive index higher than that of a light transparent substrate is formed on the light transparent substrate, and a second layer having a refractive index higher than that of the first layer is formed on the first layer, and an electrode layer having a refractive index higher than that of the second layer is formed on the second layer in accordance with the present invention. By means of this configuration, a spherical-wave-shaped wavefront emitted from a point light source of an emission layer of a light-emitting device to all directions, is converted to a plane-wave-shaped wavefront within the substrate, which allows the light to be effectively emitted outside the substrate, so that a light-emitting device substrate having good light extraction efficiency and a light-emitting device using the same may be provided.Type: GrantFiled: August 12, 2004Date of Patent: February 20, 2007Assignee: Samsung SDI Co., Ltd.Inventors: Tomohisa Gotoh, Noriko Takewaki, Hisanao Tsuge, Atsushi Kamijo, Satoru Toguchi
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Publication number: 20050219772Abstract: In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.Type: ApplicationFiled: May 31, 2005Publication date: October 6, 2005Applicant: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Tsutomu Ishi, Hiroaki Honjou, Kunihiko Ishihara, Jun-Ichi Fujikata, Hisao Matsutera, Hisanao Tsuge, Atsushi Kamijo
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Patent number: 6950290Abstract: In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.Type: GrantFiled: September 12, 2002Date of Patent: September 27, 2005Assignee: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Tsutomu Ishi, Hiroaki Honjou, Kunihiko Ishihara, Jun-Ichi Fujikata, Hisao Matsutera, Hisanao Tsuge, Atsushi Kamijo
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Patent number: 6914257Abstract: In accordance with a method of producing an MR (MagnetoResistive) device including a ferromagnetic tunnel junction made up of a first ferromagnetic layer, an insulation layer formed on the first ferromagnetic layer and a second ferromagnetic layer formed on the insulation layer, a metal or a semiconductor is deposited on the first ferromagnetic layer. The metal or the semiconductor is then caused to react to oxygen of a ground level to become an oxide layer, which is the oxide of the metal or that of the semiconductor. Subsequently, the oxide layer is caused to react to oxygen of an excitation level to form the insulation layer. The second ferromagnetic layer is formed on the insulation layer.Type: GrantFiled: April 16, 2002Date of Patent: July 5, 2005Assignee: NEC CorporationInventors: Ken-ichi Shimura, Hisanao Tsuge, Atsushi Kamijo, Tsutomu Mitsuzuka, Yoshiyuki Fukumoto
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Publication number: 20050062399Abstract: A first layer having a refractive index higher than that of a light transparent substrate is formed on the light transparent substrate, and a second layer having a refractive index higher than that of the first layer is formed on the first layer, and an electrode layer having a refractive index higher than that of the second layer is formed on the second layer in accordance with the present invention. By means of this configuration, a spherical-wave-shaped wavefront emitted from a point light source of an emission layer of a light-emitting device to all directions, is converted to a plane-wave-shaped wavefront within the substrate, which allows the light to be effectively emitted outside the substrate, so that a light-emitting device substrate having good light extraction efficiency and a light-emitting device using the same may be provided.Type: ApplicationFiled: August 12, 2004Publication date: March 24, 2005Inventors: Tomohisa Gotoh, Noriko Takewaki, Hisanao Tsuge, Atsushi Kamijo, Satoru Toguchi
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Publication number: 20050051791Abstract: Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a s second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.Type: ApplicationFiled: June 7, 2004Publication date: March 10, 2005Inventors: Tomohisa Gotoh, Noriko Takewaki, Hisanao Tsuge, Atsushi Kamijo, Satoru Toguchi
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Patent number: 6639766Abstract: A magneto-resistance effect (“MR”) type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element includes a center region including a ferromagnetic tunnel junction magneto-resistance effect film having a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in an almost vertical direction between the first and the second magnetic shields; a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for /applying a bias magnetic field to the center region.Type: GrantFiled: October 24, 2001Date of Patent: October 28, 2003Assignee: NEC CorporationInventors: Ishiwata Nobuyuki, Hisanao Tsuge, Hisao Matsutera, Yuji Tsukamoto, Masafumi Nakada, Atsushi Kamijo
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Patent number: 6542342Abstract: In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.Type: GrantFiled: November 29, 1999Date of Patent: April 1, 2003Assignee: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Tsutomu Ishi, Hiroaki Honjou, Kunihiko Ishihara, Jun-Ichi Fujikata, Hisao Matsutera, Hisanao Tsuge, Atsushi Kamijo
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Patent number: 6538861Abstract: A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion.Type: GrantFiled: June 19, 2000Date of Patent: March 25, 2003Assignee: NEC CorporationInventors: Kazuhiko Hayashi, Masafumi Nakada, Eizo Fukami, Kiyokazu Nagahara, Hiroaki Honjou, Kunihiko Ishihara, Tamaki Toba, Hisanao Tsuge, Atsushi Kamijo
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Publication number: 20030035256Abstract: In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.Type: ApplicationFiled: September 12, 2002Publication date: February 20, 2003Applicant: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Tsutomu Ishi, Hiroaki Honjou, Kunihiko Ishihara, Jun-Ichi Fujikata, Hisao Matsutera, Hisanao Tsuge, Atsushi Kamijo
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Publication number: 20030008416Abstract: In accordance with a method of producing an MR (MagnetoResistive) device including a ferromagnetic tunnel junction made up of a first ferromagnetic layer, an insulation layer formed on the first ferromagnetic layer and a second ferromagnetic layer formed on the insulation layer, a metal or a semiconductor is deposited on the first ferromagnetic layer. The metal or the semiconductor is then caused to react to oxygen of a ground level to become an oxide layer, which is the oxide of the metal or that of the semiconductor. Subsequently, the oxide layer is caused to react to oxygen of an excitation level to form the insulation layer. The second ferromagnetic layer is formed on the insulation layer.Type: ApplicationFiled: April 16, 2002Publication date: January 9, 2003Applicant: NEC CORPORATIONInventors: Ken-Ichi Shimura, Hisanao Tsuge, Atsushi Kamijo, Tsutomu Mitsuzuka, Yoshiyuki Fukumoto
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Patent number: 6493195Abstract: A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer.Type: GrantFiled: August 30, 2000Date of Patent: December 10, 2002Assignee: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Eizo Fukami, Hiroaki Honjo, Hisanao Tsuge, Atsushi Kamijo
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Patent number: 6490139Abstract: A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.Type: GrantFiled: January 27, 2000Date of Patent: December 3, 2002Assignee: NEC CorporationInventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Hisao Matsutera, Hisanao Tsuge, Atsushi Kamijo
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Publication number: 20020164828Abstract: In a tunneling magnetoresistance transducer including first and second ferromagnetic layers and a tunnel barrier layer made of insulating material sandwiched by the first and second ferromagnetic layers, the resistance of the tunnel barrier layer remains essentially constant independent of the temperature of the transducer.Type: ApplicationFiled: June 4, 2002Publication date: November 7, 2002Applicant: NEC CORPORATIONInventors: Nobuyuki Ishiwata, Keishi Ohashi, Hisanao Tsuge
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Patent number: 6452204Abstract: In a tunneling magnetoresistance transducer including first and second ferromagnetic layers and a tunnel barrier layer made of insulating material sandwiched by the first and second ferromagnetic layers, the resistance of the tunnel barrier layer remains essentially constant independent of the temperature of the transducer.Type: GrantFiled: December 8, 1999Date of Patent: September 17, 2002Assignee: NEC CorporationInventors: Nobuyuki Ishiwata, Keishi Ohashi, Hisanao Tsuge
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Patent number: 6392281Abstract: The invention provides a method of forming a tunnel barrier layer comprising at least a single oxide layered region in an intermediate layer sandwiched between first and second ferromagnetic layers. The method comprises the following steps. An electrically conductive layer is formed on the first ferromagnetic layer. The electrically conductive layer is subjected to an exactly pure oxygen gas prepared by having introduced oxygen into a vacuum, so as to cause a natural oxidation of the electrically conductive layer, thereby to form an oxide layer forming a tunnel barrier. The second ferromagnetic layer is formed on the oxide layer.Type: GrantFiled: March 28, 2000Date of Patent: May 21, 2002Assignee: NEC CorporationInventor: Hisanao Tsuge