Abstract: A magneto-resistance effect (“MR”) type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element includes a center region including a ferromagnetic tunnel junction magneto-resistance effect film having a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in an almost vertical direction between the first and the second magnetic shields; a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for /applying a bias magnetic field to the center region.

Abstract: The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned layer, and a second antiferromagnetic pinning layer. The first pinning layer has a first pinning field, which pins a magnetization of the free layer in a track width direction. The second pinning layer has a second pinning field, which pins a magnetization of the pinned layer in a direction in the plane of the stacked layers of the magnetic tunnel junction, along the applied external magnetic field direction.

Abstract: The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head.

Abstract: A ferromagnetic tunnel junction structure includes an anti-ferromagnetic layer; a first ferromagnetic layer in contact with the anti-ferromagnetic layer; a tunnel barrier layer in contact with the first ferromagnetic layer; a second ferromagnetic layer in contact with the tunnel barrier layer so that the tunnel barrier layer is sandwiched between the first and second ferromagnetic layer, the second ferromagnetic layer includes at least a high polarization layer and at least a soft magnetic layer so that the high polarization layer is positioned closer to the tunnel barrier layer than the soft magnetic layer.

Abstract: A method of forming a tunnel barrier layer that includes at least a single oxide layered region in an intermediate layer sandwiched between first and second ferromagnetic layers. An electrically conductive layer is formed on the first ferromagnetic layer. The electrically conductive layer is subjected to an exactly pure oxygen gas prepared by introducing oxygen into a vacuum, so as to oxidize the electrically conductive layer, thereby to form an oxide layer forming a tunnel barrier. The second ferromagnetic layer is formed on the oxide layer.

Abstract: There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel barrier layer, (d) mechanically polishing end surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer, and (e) etching the surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer. The method provides a ferromagnetic tunnel junction device having a height defined with high accuracy, and including a tunnel barrier layer keeping first and second ferromagnetic layers in electrical isolation with each other.

Abstract: A magnetic oxide represented by A.sub.1-x A'.sub.x Mn.sub.1-y M.sub.y O.sub.z, where: A is at least one element selected from the group consisting of lanthanoid, Y and Bi; A' is at least one element selected from the group consisting of alkaline earth metals and Pb; M is at least one element selected from the group consisting of Ni and Cu; 0<x, y.ltoreq.0.5; and 2.5.ltoreq.z.ltoreq.3.5.

Abstract: A method for the geometry independent planarization of dielectric films on integrated circuits is disclosed.The method comprises forming the dielectric film, forming a polymer layer which polymer has the viscosity of 5,000 cps or less at 200.degree. C., reducing the viscosity of the polymer under baking to create a planar surface, hardening the polymer by the radiation or the electric beam and etching said polymer layer to transfer the planar surface to said dielectric film.

Abstract: A holder for holding a plurality of electronic component chips, each of which is provided with external terminal electrodes on both of longitudinal ends thereof, has a plurality of receiving portions defined by through holes for receiving respective ones of the electronic component chips one by one. An elastic member is formed on an inner peripheral surface defining each of the receiving portions, for elastically holding each of the electronic component chips. Each electronic component chip is received in each receiving portion to be longitudinally and crosswisely oriented toward a direction orthogonal to the axis of the receiving portion. This electronic component chip holder is advantageously employed to perform various operations such as measurement, marking, taping, magazinization and mounting of the electronic component chips.

Abstract: A method for producing multi-layered Josephson tunnel barrier devices without an edge step between the layers comprises the steps of forming a first layer containing at least a lower layer superconducting film on a substrate, selectively removing the surface portion of the first layer, except an area where a Josephson tunnel barrier is to be formed, to a predetermined first depth, and forming a first insulating film, preferably by a high-directivity film forming method, on the removed portion of the first layer in such a thickness that the insulating film surface is substantially coplanar with the surface of the retained area of the first layer. A tunnel barrier may be subsequently formed after the third step or in advance following formation of the first layer in the first step, thereby eliminating a change in the characteristics of the tunnel barrier due to the atmosphere.