Abstract: A shock absorbing device for a shoe sole includes: an outer sole 2; a midsole M; and a deformation element 3 placed between the outer sole 2 and the midsole M. The deformation element 3 is positioned at a periphery of a rear foot part 1B and includes a bending deformation member 30 that opens toward the periphery from a center of the rear foot part 1B. The bending deformation member 30 includes a lower plate portion 31, an upper plate portion 32 that forms an opening angle with respect to the lower plate portion 31, and a curved portion 33 that connects the lower plate portion 31 and the upper plate portion 32. The lower plate portion 31 and the upper plate portion 32 are gradually getting away from each other as a distance from the curved portion increases. A rubber-like or pod-like compression deformation member 35 is fit between the lower and upper plate portions 31, 32.

Abstract: A shock absorbing device for a shoe sole according to the present invention comprises: an outer sole 2; a midsole M that is disposed above the outer sole 2; and a deformation element 3 disposed between the outer sole 2 and the midsole M. The deformation element 3 is joined to the bottom surface of the midsole M and is joined to the upper surface of the outer sole 2. The deformation element has a tubular part 30 in a flat tubular form, and Young's modulus of a material constituting the tubular part 30 is greater than both that of a material constituting the midsole M and that of a material constituting the outer sole 2. The tubular part has a lower portion that is curved so as to be convex downwards and thereby undergoes bending deformation due to a shock at landing.

Abstract: An electronic merchandise distribution apparatus includes an information management unit which acquires at least one of viewing information, preference information, and retrieval information of a user who uses one of a plurality of terminals, and a distribution management unit which stores non-real-time contents compressed by a CODEC, in an access provider corresponding to one of the plurality of terminals used by the user, based on the acquired at least one of the viewing information, preference information, and retrieval information of the user, prior to receiving the contents viewing request from the user.

Abstract: An ink composition according to the present invention comprises a pigment, a pigment dispersion resin, an non-aqueous ambient temperature non-volatile liquid removal agent and an non-aqueous ambient temperature volatile organic solvent, wherein the amount of the pigment dispersion resin relative to that of the pigment is within the range of from about 2 to about 10%. Methods of making the ink composition and methods of applying the ink composition to a writing board also are disclosed. The ink composition is superior in time-erasion performance independent of the object and/or surface of the writing board.

Abstract: A water base dye ink composition which comprises:(i) water as a solvent;(ii) a carboxyl group containing styrenic resin having an average weight of 1500-30000 and an acid value of 150-300, in an amount of 2-20% by weight;(iii) at least one anionic dye selected from the group consisting of:(a) a metal complex azo acid dye;(b) C.I. direct black; and(c) C.I. acid yellow 110, C.I. acid yellow 127, C.I. direct yellow 100, C.I. 20215, C.I. 20216, C.I. 20230, C.I. 23266, C.I. 23635, C.I. 40002, C.I. 40215, C.I. 42655 and C.I. 42660, in an amount of 0.01-10% by weight; and(iv) an alkali which is volatile at normal temperatures in such an amount as put the ink composition at a pH in the range of 6 to 9.5.

Abstract: A mixed crystal ratio difference is introduced in a gallium arsenide phosphide mixed crystal layer having a desired constant mixed crystal ratio, thereby reducing the amount of stress remaining within the resulting epitaxial wafer. This is less likely or unlikely to crack, and so can be well used for LED fabrication.

Abstract: In order to grow a GaAs.sub.1-x P.sub.x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is formed between the substrate and the fixed-composition layer. The varied-composition layer comprises at least two varied-composition layer portions and at least one fixed-composition layer portion with a predetermined thickness that is formed between the varied-composition layer portions, whereby dislocations caused by lattice mismatch with the GaP substrate are settled in the varied-composition layer portions and recovered in the fixed-composition layer portion between the varied-composition layer portions, thereby minimizing the dislocations, and thus making it possible to obtain a GaAs.sub.1-x P.sub.x layer of excellent crystal quality, which has a predetermined composition x.

Abstract: A water base ink composition which comprises water as a solvent, a carboxyl group containing styrenic resin having an average molecular weight of 1500-30000 and an acid value of 150-300, in an amount of 2-20% by weight, a basic dye in an amount of 0.1-80 parts by weight in relation to 100 parts by weight of the styrenic resin, and an alkali which is volatile at normal temperatures in such an amount as adjusts the ink composition at a pH in the range of 6 to 8.5.

Abstract: An erasable ink composition for writing on an impervious writing surface comprising an organic solvent, a resin, a pigment, and a separating agent which comprises:(a) a polyoxyethylene polyoxypropylene block copolymer, as a first separating agent, which is liquid at normal temperatures in an amount of 5-20% by weight, and(b) at least one organic compound selected from the group consisting of a carboxylic acid ester, a polyoxypropylene monoalkyl ether and a polyoxyethylene polyoxypropylene monoalkyl ether, as a second separating agent, which is liquid at normal temperatures in an amount of 2-10% by weight.

Abstract: An erasable ink composition for writing on an impervious writing surface comprising an organic solvent, a resin, a pigment, and a separating agent which comprises a polyoxyethylene polyoxypropylene monoalkyl ether which is liquid at normal temperatures in an amount of 5-20% by weight, and optionally at least one organic compound selected from the group consisting of a carboxylic acid ester and a polyoxypropylene monoalkyl ether which is liquid at normal temperatures in an amount of 2-10% by weight in conjunction.

Abstract: A double hetero type epitaxial wafer contains a single crystal substrate, first and second conductivity type clad layers which are opposite and are made of mixed crystal compounds of Group III-V which had an indirect transition type band structure, and an active layer made of a mixed crystal compound of Group III-V which has a direct transition type band structure and is interposed between the respective clad layers, wherein the first conductivity type clad layer has a refractive index smaller than that of the second conductivity type clad layer.

Abstract: An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

Abstract: In the boat growth method of the IIIb-Vb group compound, the quartz boat is tridymitized on at least the surface thereof so as to prevent wetting of the boat due to the melt of the compound and hence to enhance the yield of a single crystal.

Abstract: An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

Abstract: In a GaAs epitaxial wafer including, for example, two epitaxial layers having high and low carrier concentrations, the carrier concentration of the low carrier concentration layer is liable to greatly vary, so that wafers suitable for FETs and Schottky barrier diodes operated at UHF and SHF are produced at only a low yield. This drawback is eliminated by adjusting the heating temperature of GaAs substrate to 690.degree. to 730.degree. C. during the growth of the low carrier concentration layer.

Abstract: The reproducibility of Te doping in III-V group compounds is improved by using as the dopant a III-V group compound containing Te at a concentration of at least 1.times.10.sup.17 cm.sup.-3.