Patents by Inventor Hisao Kawaura

Hisao Kawaura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8558211
    Abstract: A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.
    Type: Grant
    Filed: March 26, 2007
    Date of Patent: October 15, 2013
    Assignee: NEC Corporation
    Inventors: Toshitsugu Sakamoto, Noriyuki Iguchi, Naoki Banno, Hisao Kawaura
  • Patent number: 8421049
    Abstract: Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in contact with ion conducting part 4 and third electrode 3 formed at a second gap away from ion conducting part 4. Second electrode 2 supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: April 16, 2013
    Assignee: NEC Corporation
    Inventors: Hisao Kawaura, Hiroshi Sunamura
  • Patent number: 8203133
    Abstract: The switching element of the present invention is of a configuration that includes: an ion conduction layer (40) that includes an oxide, a first electrode (21) and a second electrode (31) that are provided in contact with the ion conduction layer (40) and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode (35) provided in contact with the ion conduction layer (40) and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.
    Type: Grant
    Filed: December 27, 2005
    Date of Patent: June 19, 2012
    Assignee: NEC Corporation
    Inventors: Toshitsugu Sakamoto, Hisao Kawaura, Hiroshi Sunamura, Naoki Banno
  • Publication number: 20110253967
    Abstract: Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in contact with ion conducting part 4 and third electrode 3 formed at a second gap away from ion conducting part 4. Second electrode 2 supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.
    Type: Application
    Filed: June 30, 2011
    Publication date: October 20, 2011
    Applicant: NEC CORPORATION
    Inventors: Hisao KAWAURA, Hiroshi SUNAMURA
  • Patent number: 8003969
    Abstract: Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in contact with ion conducting part 4 and third electrode 3 formed at a second gap away from ion conducting part 4. Second electrode 2 supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: August 23, 2011
    Assignee: NEC Corporation
    Inventors: Hisao Kawaura, Hiroshi Sunamura
  • Patent number: 7964867
    Abstract: The switching element of the present invention includes an ion conduction layer (40) capable of conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer (40), and a third electrode (35) provided in contact with the ion conduction layer (40) and capable of supplying metal ions, and is of a configuration in which the area over which the first electrode (21) contacts the ion conduction layer (40) is smaller than the area over which the second electrode (31) contacts the ion conduction layer (40). The use of this configuration decreases the leak current in the OFF state.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: June 21, 2011
    Assignee: NEC Corporation
    Inventors: Toshitsugu Sakamoto, Hisao Kawaura
  • Patent number: 7960712
    Abstract: The switching element of the present invention includes: an ion conduction layer (4) in which metal ions can move freely; a first electrode (1) that contacts the ion conduction layer (4); and a second electrode (2) that contacts the ion conduction layer (4), that is formed such that the ion conduction layer (4) is interposed between the first electrode (1) and the second electrode (2), and that supplies metal ions to the ion conduction layer (4) or that receives metal ions from the ion conduction layer (4) to cause precipitation of the metal that corresponds to the metal ions. An introduction path (5) composed of the metal and of a prescribed width is further provided on the ion conduction layer (4) for electrically connecting the first electrode (1) and the second electrode (2).
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: June 14, 2011
    Assignee: NEC Corporation
    Inventors: Toshitsugu Sakamoto, Hisao Kawaura
  • Patent number: 7875883
    Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: January 25, 2011
    Assignees: Japan Science and Technology Agency, Riken, NEC Corporation
    Inventors: Toshitsugu Sakamoto, Masakazu Aono, Tsuyoshi Hasegawa, Tomonobu Nakayama, Kazuya Terabe, Hisao Kawaura, Tadahiko Sugibayashi
  • Patent number: 7842514
    Abstract: A channel (1) formed in a substrate (41) branches into channels (2, 3) at a branch point (43). On this branch point, obstacles (8) having a columnar structure are aligned at certain intervals.
    Type: Grant
    Filed: November 25, 2003
    Date of Patent: November 30, 2010
    Assignee: NEC Corporation
    Inventors: Wataru Hattori, Masakazu Baba, Toru Sano, Kazuhiro Iida, Hisao Kawaura, Noriyuki Iguchi, Hiroko Someya
  • Patent number: 7804085
    Abstract: The switching element of the present invention is of a configuration that includes: a first electrode (14) and a second electrode (15) provided separated by a prescribed distance; a solid electrolyte layer (16) provided in contact with the first electrode (14) and the second electrode (15); a third electrode (18) that can supply metal ions and that is provided in contact with the solid electrolyte layer (16); and a metal diffusion prevention film (17) that covers points of the surface of the solid electrolyte layer (16) that are not in contact with the first electrode (14), the second electrode (15) or the third electrode (18). This configuration prevents the adverse effect of metal ions upon other elements.
    Type: Grant
    Filed: January 16, 2006
    Date of Patent: September 28, 2010
    Assignee: NEC Corporation
    Inventors: Hiroshi Sunamura, Naoya Inoue, Toshitsugu Sakamoto, Hisao Kawaura
  • Patent number: 7785533
    Abstract: A channel formed on a chip is opened without contaminating contents of the channel. Channels (107a) and (107b) provided on a substrate (103) are covered by pressing a lid (113) composed of a resin layer (102) and a plate-like lid (101) to a surface of the substrate (103). A fixing device has a retainer plate (104), which retains the plate-like lid (101) of a chip (112), a board (108) on which the substrate (103) is placed, and a screw (106). When covering the channels (107a) and (107b), the screw (106) is fastened and the lid (113) is pressed to the substrate (103) to be fixed. And, when opening an upper portion of the channels (107a) and (107b), the screw (106) is turned upward and a pressure is released, and the lid (113) is removed from the upper potion of the substrate (103).
    Type: Grant
    Filed: September 13, 2004
    Date of Patent: August 31, 2010
    Assignee: NEC Corporation
    Inventors: Machiko Fujita, Toru Sano, Kazuhiro Iida, Hisao Kawaura, Wataru Hattori, Masakazu Baba, Noriyuki Iguchi
  • Patent number: 7781891
    Abstract: A switching element is of a configuration that includes: an ion conduction layer (40) for conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer, a third electrode (35) that can supply metal ions to the ion conduction layer, and a diffusion prevention layer (90) provided between the ion conduction layer (40) and the third electrode (35) for preventing the diffusion of metal ions from the third electrode (35) to the ion conduction layer (40). By adopting this configuration, the set state of a switch can be maintained with greater stability.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: August 24, 2010
    Assignee: Nec Corporation
    Inventors: Toshitsugu Sakamoto, Hisao Kawaura
  • Patent number: 7750332
    Abstract: The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: July 6, 2010
    Assignees: Japan Science and Technology Agency, Riken, NEC Corporation
    Inventors: Toshitsugu Sakamoto, Masakazu Aono, Tsuyoshi Hasegawa, Tomonobu Nakayama, Hiroshi Sunamura, Hisao Kawaura, Naohiko Sugibayashi
  • Publication number: 20100133501
    Abstract: A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.
    Type: Application
    Filed: March 26, 2007
    Publication date: June 3, 2010
    Applicant: NEC CORPORATION
    Inventors: Toshitsugu Sakamoto, Noriyuki Iguchi, Naoki Banno, Hisao Kawaura
  • Publication number: 20100035291
    Abstract: A fragmenting reaction of peptide is achieved while maintaining the isolated state of peptide. Isolated peptide fractions isolated by electrophoresis are prepared in flow paths. Subsequently, prepared peptide fractions are dried by each of the flow paths. Then, dried peptide fractions are in contact with protease. Then, independent liquid membranes of a solvent are formed over the surfaces of peptide fractions, which have been in contact with protease, disposed on the flow paths, respectively.
    Type: Application
    Filed: July 22, 2009
    Publication date: February 11, 2010
    Applicant: NEC Corporation
    Inventors: Kenji MIYAZAKI, Yo Tabuse, Hiroko Someya, Wataru Hattori, Hisao Kawaura
  • Publication number: 20090301227
    Abstract: Liquid contact structure 1 includes lyophilic surface 2 which is provided with a plurality of convex structures 3 and which is adapted to come into contact with a predetermined liquid. Surface 2 has lyophilicity that varies depending on regions of 2 surface according to a difference in a surface area multiplication factor which is caused by convex structures 3, wherein surface 2 is formed to have highest lyophilicity within predetermined region 4 on surface 2.
    Type: Application
    Filed: November 24, 2006
    Publication date: December 10, 2009
    Inventors: Wataru Hattori, Hisao Kawaura
  • Publication number: 20090242754
    Abstract: The present invention provides a microchip and a sample analysis method in which mass analysis of a separated sample can be performed with high sensitivity without damaging resolution of a microchip. A microchip includes a channel formed on a substrate and sample collection portions which are formed along the channel, apart from the channel and are apart from each other.
    Type: Application
    Filed: March 30, 2009
    Publication date: October 1, 2009
    Applicant: NEC Corporation
    Inventor: Hisao Kawaura
  • Patent number: 7586091
    Abstract: After a sample is previously separated into plural components in a channel formed in a microchip (353), the channel is irradiated along a separation direction with a laser beam from a laser oscillator (361) to sequentially ionize each fraction separated in the channel. The ionized fraction is detected by a mass spectrometry unit (363) and analyzed by an analytical result analyzing unit (371). The analytical result is stored in a memory (369) while associated with position information in a driver control unit (367) and information on laser beam irradiation condition in a laser control unit (373), and the analytical result is imaged by an imaging unit (375). The imaged analytical result is displayed on a display (377).
    Type: Grant
    Filed: March 15, 2004
    Date of Patent: September 8, 2009
    Assignee: NEC Corporation
    Inventors: Katsutoshi Takahashi, Kazuhiro Iida, Masakazu Baba, Noriyuki Iguchi, Toru Sano, Hisao Kawaura, Toshitsugu Sakamoto, Wataru Hattori, Hiroko Someya
  • Publication number: 20090205959
    Abstract: The present invention provides a technique for automating the operation to peel off and remove a lid seal part adhered and fixed to the top face of a substrate part constituting a lid-sealed “microchip” after subjecting a sample solution to be analyzed to electrophoretic separation. After subjecting sample solution to be analyzed to desired electrophoretic separation the by utilizing a channel formed in the lid-sealed microchip, the electrophoretically separated liquid sample held in the channel undergoes freezing of the aqueous solvent contained and then, while the whole electrophoretically separated liquid sample remains sustained in the frozen state, an end of the lid seal part used for sealing the top face of channel formed in the substrate part is lifted up at a predetermined speed so as to peel and remove it from the substrate part under a condition of maintaining a bend of a predetermined radius of curvature.
    Type: Application
    Filed: February 8, 2006
    Publication date: August 20, 2009
    Applicant: NEC CORPORATION
    Inventors: Machiko Fujita, Hisao Kawaura
  • Patent number: RE42040
    Abstract: A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with said ion conductor and spaced a predetermined distance from each other, and a third electrode disposed in contact with the ion conductor. When a voltage for causing the switching element to transit to an on state is applied to the third electrode, metal is precipitated between the first electrode and the second electrode by metal ions, electrically interconnecting the first electrode and the second electrode. When a voltage for causing the switching element to transit to an off state is applied to the third electrode, the precipitated metal is dissolved to electrically disconnect the first electrode and the second electrode from each other.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: January 18, 2011
    Assignee: NEC Corporation
    Inventors: Toshitsugu Sakamoto, Hisao Kawaura, Hiroshi Sunamura