Abstract: A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with said ion conductor and spaced a predetermined distance from each other, and a third electrode disposed in contact with the ion conductor. When a voltage for causing the switching element to transit to an on state is applied to the third electrode, metal is precipitated between the first electrode and the second electrode by metal ions, electrically interconnecting the first electrode and the second electrode, When a voltage for causing the switching element to transit to an off state is applied to the third electrode, the precipitated metal is dissolved to electrically disconnect the first electrode and the second electrode from each other.

Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

Abstract: A liquid sample (104) introduced in a main flow passage (101) is held in a dam portion (105), and a trigger liquid (106) is filled in a trigger flow passage (102). In this state, the trigger liquid (106) is further introduced at desired timing into the trigger flow passage (102) so that the front end portion of the level of the trigger liquid (106) is advanced and the front end portion is brought to be into contact with the dam portion (105). This causes the liquid sample (104) to move to the right (downstream side) in the figure, resulting in the liquid sample (104) flowing out to the downstream side of the main flow passage (101). This means that the trigger liquid (106) provides priming to realize a liquid switch.

Abstract: There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

Abstract: A particular component in a sample is recovered in a high concentration and solvent-replaced. A separator 100 is placed on a microchip and includes a channel 112 for flowing the particular component. The channel 112 includes a sample feeding channel 300 as well as a filtrate discharge channel 302 and a sample recovering part 308 which are branched from the sample feeding channel 300. There is formed a filter 304 for preventing passage of the particular component, at the inlet of the filtrate discharge channel 302 from the sample feeding channel 300. Furthermore, there is formed a damming area (hydrophobic area) 306 for preventing entering of a liquid sample while allowing for passage of the liquid sample by applying an external force equal to or larger than a given level, at the inlet of the sample recovering part 308 from the sample feeding channel 300.

Abstract: Individual components are separated with a high concentration and accurately, from a sample containing components-to-be-separated. The separation apparatus includes a channel through which a sample containing components-to-be-separated moves; and gateway portions partitioning the separation channel into a plurality of compartments. The separation apparatus further includes an external force imposing unit, which imposes external force to the components-to-be-separated so as to allow them to move through the channel. The external force imposing unit is configured so as to alternately repeatedly execute a first external force imposing pattern by which the external force is imposed in the forward direction of the channel, and a second external force imposing pattern by which the external force is imposed in the direction opposite to the forward direction along the channel. This makes it possible to fractionate the components-to-be-separated into any of the compartments.

Abstract: A sample reservoir (205) in which a sample (213) is introduced is sealed by a septum (207). On piercing the septum (207) by an injection needle, the sample reservoir (205) is communicated with the outer atmosphere, and then the sample (213) is delivered from the channel 203 to the water absorbing portion (209).

Abstract: A channel (1) formed in a substrate (41) branches into channels (2, 3) at a branch point (43). On this branch point, obstacles (8) having a columnar structure are aligned at certain intervals.

Abstract: A channel (103) is formed in a substrate (101) and a drying area (107) comprising a plurality of pillars (105) is formed in one end of the channel (103). A cover (109) is formed over the channel (103), except the area above the drying area (107). When a sample is introduced into the channel (103), it is guided to the drying area (107) by capillary phenomenon. The drying area (107) is heated by a heater (111) to evaporate the solvent for concentrating and drying the solute.

Abstract: A separation apparatus (100) has a separation channel (112), a partition wall (301a) and a partition wall (301b), wherein each of the partition wall (301a) and the partition wall (301b) has a capture portion (300) formed thereon. Molecules having a size acceptable by the capture portions (300) provided on the partition wall (301a) and the partition wall (301b) are captured by the capture portion (300) and reduced in the travel speed through the separation channel (112), and this makes it possible to precisely separate the sample depending on the molecular size.

Abstract: The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.

Abstract: A fractionating apparatus is used for fractionating sample into micro-structures different in size, and includes a fractionating unit formed with a fractionating passage; the fractionating passage is defined in a groove formed in a substrate of the fractionating unit, and pillar patches are formed in the groove at intervals wider than the gap among the pillar patches; while the sample is migrated through the fractionating passage, small-sized DNA molecules are trapped in the pillar patches, and large-sized DNA molecules are smoothly migrated through the wide intervals; this results in that the large-sized DNA molecules reaches the end of the fractionating passage faster than the small-sized DNA molecules without clogging.

Abstract: There is disclosed a separation device in which separation flow paths for allowing the passage of only molecules having a predetermined size and smaller sizes are disposed between two flow channels set apart by a partition; and a separation method using the device. According to the separation technique, substances having small sizes such as cells, nucleic acids and proteins can be separated by the use of a small amount of a sample in a short time with excellent resolution, and problems of clogging and the like can also be solved.

Abstract: There is provided separation techniques for separating samples in a short period of time by using a small amount of samples with excellent resolution, causing few problems such as clogging.

Abstract: A separator has a specimen separating area comprising a number of recesses defined in an inner wall of a flow passage through which a specimen passes. For separating nucleic acid and protein, the recesses have openings whose maximum diameter is 300 nm or less, and adjacent ones of the recesses are spaced at an average interval of 300 nm or less.

Abstract: A fractionating apparatus is used for fractionating sample into micro-structures different in size, and includes a fractionating unit formed with a fractionating passage; the fractionating passage is defined in a groove formed in a substrate of the fractionating unit, and pillar patches are formed in the groove at intervals wider than the gap among the pillar patches; while the sample is migrated through the fractionating passage, small-sized DNA molecules are trapped in the pillar patches, and large-sized DNA molecules are smoothly migrated through the wide intervals; this results in that the large-sized DNA molecules reaches the end of the fractionating passage faster than the small-sized DNA molecules without clogging.

Abstract: A solid state image sensor comprises a p-type semiconductor region, an n-type photoelectric conversion region formed in a surface region of the semiconductor region, an n-type charge transfer region formed in the surface of the semiconductor region separately from the photoelectric conversion region, and an electric charge read-out gate region formed between the photoelectric conversion region and the charge transfer region. A p.sup.+ thin surface layer region if formed to cover a surface of the photoelectric conversion region excluding an end portion adjacent to the electric charge read-out gate region. A gate electrode is formed above the electric charge read-out gate region. The end portion of the photoelectric conversion region not covered by the thin surface layer region, has a short length sufficient to make a potential well formed in the portion shallow under influence of potentials of the p.sup.+ thin surface layer region and the electric charge read-out gate region.