Abstract: An error function calculation device, which performs processing of calculating an error function FM(T) having T (positive real number) as a variable and M (M is an integer of 0 or more) as an order, includes a coefficient table and a calculation section. The coefficient table stores a value of FM+i(T0)/FM(T0) (i is at least one integer among 1 to n, and n is a natural number) calculated for T0, obtained by an n-th order polynomial approximation of the error function FM(T), or a multiplied value which is obtained by multiplying the value of FM+i(T0)/FM(T0) by a constant. The calculation section reads the value of FM+i(T0)/FM(T0) or the multiplied value from the coefficient table, and performs at least a part of the processing of calculating a value of the error function FM(T) by a fixed-point arithmetic using the value of FM+i(T0)/FM(T0) or the multiplied value.

Abstract: A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.

Abstract: A method of manufacturing a brush includes inserting bristles into bristles insertion holes, and implanting the bristles in a resin material. The inserting further includes preparing sleeves corresponding to cross sectional shapes and cross sectional areas of the bristles insertion holes; introducing the bristles into the sleeves; and independently inserting the bristles within each of the sleeves to the corresponding bristles insertion holes.

Abstract: An object of the present invention is to provide a method for producing a gallium nitride-based compound semiconductor multilayer structure useful for the production of a gallium nitride-based compound semiconductor light-emitting device which can ensure that the operating voltage is reduced, the light emission output is good and the light emission output is less changed due to aging.

Abstract: The object of the present invention is to provide a gallium nitride-based compound semiconductor multilayer structure useful for manufacturing a gallium nitride-based compound semiconductor light-emitting device which requires a low operating voltage and from which a good emission output can be obtained. The present gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type layer, a light-emitting layer and a p-type layer, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly and the light-emitting layer being provided between the n-type layer and the p-type layer, wherein the well layers consisting of the multiple quantum well structure comprise a well layer having an ununiform thickness and a well layer having a uniform thickness.

Abstract: A method of the data conversion, a data conversion circuit and a data conversion program are provided which make the memory capacity of the circuit for storing the converted data small and can make the error of the output data small. To comprise a priority encoder 11 outputting bit number of “1” located at the most significant bit in the input data as L data, a bit-extracting portion outputting (L-1) to (L-2) bits in the input data as N data and (L-3) to 0 bits as M data, a table address forming portion 13 outputting a first address obtained by combining the L data with the M data, a conversion-table storing portion 14 storing a conversion table where converted data corresponds to table addresses, a multiplexer 15 selecting 0 or converted data and a linear interpolation portion 20 processing interpolation based on the two converted data.

Abstract: A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.

Abstract: A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layers (130), the band gap energy Eg1 of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1?Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.

Abstract: A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layers (130), the band gap energy Eg1 of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1?Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.

Abstract: An error function calculation device, which performs processing of calculating an error function FM(T) having T (positive real number) as a variable and M (M is an integer of 0 or more) as an order, includes a coefficient table and a calculation section. The coefficient table stores a value of FM+i(T0)/FM(T0) (i is at least one integer among 1 to n, and n is a natural number) calculated for T0, obtained by an n-th order polynomial approximation of the error function FM(T), or a multiplied value which is obtained by multiplying the value of FM+i(T0)/FM(T0) by a constant. The calculation section reads the value of FM+i(T0)/FM(T0) or the multiplied value from the coefficient table, and performs at least a part of the processing of calculating a value of the error function FM(T) by a fixed-point arithmetic using the value of FM+i(T0)/FM(T0) or the multiplied value.

Abstract: A calculation section performs a simplified calculation to obtain lengths and/or angles using calculations of addition and multiplication, without using calculations of division, square root and inverse trigonometric function that impose heavy load to the hardware. A data storage section stores reference length data and reference angle data in a data format that is appropriate for the simplified calculation.

Abstract: A method of producing a pulp molded article comprising a papermaking step in which a pulp slurry is fed to the surface of a papermaking mold having suction paths, and water contained in the pulp slurry is sucked through the suction paths whereby the pulp is deposited on the surface to form a wet preform, and a dewatering step in which the wet preform is dewatered, wherein the temperature of the fed pulp slurry is raised while the pulp is being deposited on the surface.

Abstract: A manufacturing method of a brush 6 including of inserting bristles 2 into a bristles insertion hole 55, and thereafter implanting the bristles in a resin base plate. Further, each individual sleeve 60 is prepared in correspondence to cross sectional shapes and cross sectional areas in the bristles insertion hole 55, the bristles 2 are introduced to the sleeves 60, and each of the bristle 2 in the sleeves 60 is inserted to the corresponding bristles insertion holes 55 by an extrusion pin 71.

Abstract: A method of the data conversion, a data conversion circuit and a data conversion program are provided which make the memory capacity of the circuit for storing the converted data small and can make the error of the output data small. To comprise a priority encoder 11 outputting bit number of “1” located at the most significant bit in the input data as L data, a bit-extracting portion outputting (L-1) to (L-2) bits in the input data as N data and (L-3) to 0 bits as M data, a table address forming portion 13 outputting a first address obtained by combining the L data with the M data, a conversion-table storing portion 14 storing a conversion table where converted data corresponds to table addresses, a multiplexer 15 selecting 0 or converted data and a linear interpolation portion 20 processing interpolation based on the two converted data.

Abstract: The data processing circuit of this invention enables efficient description and execution of processes that act upon the stack pointer, using short instructions. It also enables efficient description of processes that save and restore the contents of registers, increasing the speed of processing of interrupts and subroutine calls and returns. A CPU that uses this data processing circuit comprises a dedicated stack pointer register SP and uses an instruction decoder to decode a group of dedicated stack pointer instructions that specify the SP as an implicit operand. This group of dedicated stack pointer instructions are implemented in hardware by using general-purpose registers, the PC, the SP, an address adder, an ALU, a PC incrementer, internal buses, internal signal lines, and external buses.

Abstract: Highly pure optically active threo-3-amino-1,2-epoxy compounds appropriate for materials for manufacturing drugs and a process for producing the same on an industrial scale. An optically active threo-3-amino-1,2-diol derivative is subjected in an organic solvent in the presence of a base to alkylsufonylation or arylsulfonylation to thereby give the corresponding optically active threo-3-amino-2-hydroxy-1-sulfonyloxy compound. Next, the resultant product is subjected to epoxidation in the presence of a base to give the corresponding optically active threo-3-amino-1,2-epoxy compound. The thus obtained epoxy compound is purified by using an organic solvent and water, thus giving a highly pure epoxy compound.

Abstract: Highly pure optically active threo-3-amino-1,2-epoxy compounds appropriate for materials for manufacturing drugs and a process for producing the same on an industrial scale. An optically active threo-3-amino-1,2-diol derivative is subjected in an organic solvent in the presence of a base to alkylsufonylation or arylsulfonylation to thereby give the corresponding optically active threo-3-amino-2-hydroxy-1-sulfonyloxy compound. Next, the resultant product is subjected to epoxidation in the presence of a base to give the corresponding optically active threo-3-amino-1,2-epoxy compound. The thus obtained epoxy compound is purified by using an organic solvent and water, thus giving a highly pure epoxy compound.

Abstract: Highly pure optically active threo-3-amino-1,2-epoxy compounds appropriate for materials for manufacturing drugs and a process for producing the same on an industrial scale. An optically active threo-3-amino-1,2-diol derivative is subjected in an organic solvent in the presence of a base to alkylsufonylation or arylsulfonylation to thereby give the corresponding optically active threo-3-amino-2-hydroxy-1-sulfonyloxy compound. Next, the resultant product is subjected to epoxidation in the presence of a base to give the corresponding optically active threo-3-amino-1,2-epoxy compound. The thus obtained epoxy compound is purified by using an organic solvent and water, thus giving a highly pure epoxy compound.

Abstract: [Problem] There is obtained a packing assembly capable of improving commerciality of a cassette case wrapped by an outside wrapping film and in which the outside wrapping film can be opened with ease.