Patents by Inventor Hisashi Yano
Hisashi Yano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220411752Abstract: Provided is an excellent method for producing an IL-4 non-secreting and IFN-? secreting (Th1-type) or IFN-? non-secreting and IL-4 secreting (Th2-type) CD4 single-positive T cell (CD4SP T cell). The method for producing the Th1-type or Th2-type CD4SP T cell of the present invention comprises a step of inducing a CD4 single-positive T cell from a hematopoietic stem cell (HSC) and/or a hematopoietic progenitor cell (HPC) substantially defective in a factor involved in IL-4 secretion or a factor involved in IFN-? secretion.Type: ApplicationFiled: October 30, 2020Publication date: December 29, 2022Applicants: Kyoto University, Takeda Pharmaceutical Company LimitedInventors: Shin KANEKO, Hisashi YANO, Tokuyuki SHINOHARA
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Patent number: 10483125Abstract: A semiconductor device includes a first interlayer film formed on an upper surface of a substrate, a first metal wiring line, a second interlayer film, a second metal wiring line, a first via electrically connecting the first metal wiring line and the second metal wiring line, a landing pad embedded in an upper portion of the first interlayer film and penetrating the second interlayer film, and a second via penetrating the substrate and the first interlayer film from a back side of the substrate and connected to the landing pad. The lower surface position of the landing pad is different from that of the first metal wiring line.Type: GrantFiled: August 28, 2018Date of Patent: November 19, 2019Assignee: TOWERJAZZ PANASONIC SEMICONDUCTOR CO., LTD.Inventors: Yuka Inoue, Mitsunori Fukura, Nobuyoshi Takahashi, Masahiro Oda, Hisashi Yano, Yutaka Ito, Yasunori Morinaga
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Publication number: 20180366342Abstract: A semiconductor device includes a first interlayer film formed on an upper surface of a substrate, a first metal wiring line, a second interlayer film, a second metal wiring line, a first via electrically connecting the first metal wiring line and the second metal wiring line, a landing pad embedded in an upper portion of the first interlayer film and penetrating the second interlayer film, and a second via penetrating the substrate and the first interlayer film from a back side of the substrate and connected to the landing pad. The lower surface position of the landing pad is different from that of the first metal wiring line.Type: ApplicationFiled: August 28, 2018Publication date: December 20, 2018Inventors: Yuka INOUE, Mitsunori FUKURA, Nobuyoshi TAKAHASHI, Masahiro ODA, Hisashi YANO, Yutaka ITO, Yasunori MORINAGA
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Patent number: 9129875Abstract: In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.Type: GrantFiled: April 3, 2014Date of Patent: September 8, 2015Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Hisashi Yano, Shigeru Suzuki, Gen Okazaki, Akira Oodaira, Motonari Katsuno, Tetsuya Nakamura
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Patent number: 9108161Abstract: The present invention provides a water purifier which is easily removable from a drinking water supply apparatus, and has a built-in filtration filter with high efficiency of purifying raw water of a bottle. The water purifier is removable from a drinking water supply apparatus, and the drinking water supply apparatus including a bottle for containing water and a main body which has a recess into which a neck of the bottle is insertable. The water purifier is characterized by being placed between the recess of the main body and the neck of the bottle.Type: GrantFiled: May 17, 2005Date of Patent: August 18, 2015Assignee: MITSUBISHI RAYON CO., LTD.Inventors: Manabu Yanou, Futomitsu Horiuchi, Hisashi Yano
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Patent number: 9029176Abstract: The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.Type: GrantFiled: April 17, 2012Date of Patent: May 12, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventor: Hisashi Yano
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Patent number: 8828886Abstract: Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.Type: GrantFiled: April 5, 2012Date of Patent: September 9, 2014Assignee: Tohoku UniversityInventors: Seiji Samukawa, Shigeo Yasuhara, Shingo Kadomura, Tsutomu Shimayama, Hisashi Yano, Kunitoshi Tajima, Noriaki Matsunaga, Masaki Yoshimaru
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Publication number: 20140210033Abstract: In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.Type: ApplicationFiled: April 3, 2014Publication date: July 31, 2014Applicant: Panasonic CorporationInventors: Hisashi YANO, Shigeru SUZUKI, Gen OKAZAKI, Akira OODAIRA, Motonari KATSUNO, Tetsuya NAKAMURA
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Patent number: 8438720Abstract: A coil component, in which a space on an outer periphery of a winding interposed between a pair of flange portion is coated with a resin with magnetic powder, has a problem of long-term reliability that a thermosetting resin expands and contracts due to change in a temperature and the flange portions are fatigued to be broken. An object of the present invention is to provide the coil component of which core is hardly broken even when the resin with magnetic powder expands and contracts and a method of manufacturing the same.Type: GrantFiled: May 25, 2011Date of Patent: May 14, 2013Assignee: Toko, Inc.Inventors: Keita Muneuchi, Yusuke Kito, Takeo Ohaga, Hisashi Yano
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Publication number: 20120267742Abstract: The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.Type: ApplicationFiled: April 17, 2012Publication date: October 25, 2012Applicant: PANASONIC CORPORATIONInventor: HISASHI YANO
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Publication number: 20120190212Abstract: Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.Type: ApplicationFiled: April 5, 2012Publication date: July 26, 2012Inventors: Seiji SAMUKAWA, Shigeo Yasuhara, Shingo Kadomura, Tsutomu Shimayama, Hisashi Yano, Kunitoshi Tajima, Noriaki Matsunaga, Masaki Yoshimaru
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Publication number: 20110309906Abstract: A coil component, in which a space on an outer periphery of a winding interposed between a pair of flange portion is coated with a resin with magnetic powder, has a problem of long-term reliability that a thermosetting resin expands and contracts due to change in a temperature and the flange portions are fatigued to be broken. An object of the present invention is to provide the coil component of which core is hardly broken even when the resin with magnetic powder expands and contracts and a method of manufacturing the same.Type: ApplicationFiled: May 25, 2011Publication date: December 22, 2011Inventors: Keita Muneuchi, Yusuke Kito, Takeo Ohaga, Hisashi Yano
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Patent number: 7892975Abstract: A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.Type: GrantFiled: March 20, 2007Date of Patent: February 22, 2011Assignee: Semiconductor Technology Academic Research CenterInventors: Eiichi Kondoh, Michiru Hirose, Hitoshi Tanaka, Masayuki Satoh, Hisashi Yano, Masaki Yoshimaru
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Publication number: 20100112776Abstract: A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.Type: ApplicationFiled: January 11, 2010Publication date: May 6, 2010Applicant: SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTERInventors: Eiichi Kondoh, Michiru Hirose, Hitoshi Tanaka, Masayuki Satoh, Hisashi Yano, Masaki Yoshimaru
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Publication number: 20080233705Abstract: A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.Type: ApplicationFiled: March 20, 2007Publication date: September 25, 2008Applicant: SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTERInventors: Eiichi Kondoh, Michiru Hirose, Hitoshi Tanaka, Masayuki Satoh, Hisashi Yano, Masaki Yoshimaru
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Publication number: 20080206949Abstract: A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.Type: ApplicationFiled: August 27, 2007Publication date: August 28, 2008Applicant: SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTERInventors: Eiichi Kondoh, Michiru Hirose, Hitoshi Tanaka, Masayuki Satoh, Hisashi Yano, Masaki Yoshimaru
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Publication number: 20080093709Abstract: A semiconductor substrate in a state that an inter-layer insulation film is formed is loaded in a chamber, air in the chamber is purged by introducing a large amount of a nitrogen gas in the chamber, and an atmospheric gas in the chamber is substituted with a nitrogen gas. After that, UV cure is performed by introducing a small amount of an oxygen gas adjusted to an atmospheric pressure or a little more positive pressure in the chamber by nitrogen purge. For the introduction of an oxygen gas, an oxygen gas is introduced while controlling the flow rate by using a flow meter, and adjustment is performed using the flow meter so that the oxygen concentration in the chamber becomes a constant value in the range of 5 ppm to 400 ppm.Type: ApplicationFiled: October 19, 2007Publication date: April 24, 2008Inventors: Masazumi Matsuura, Kinya Goto, Hisashi Yano, Kotaro Nomura
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Publication number: 20080017565Abstract: The present invention provides a water purifier which is easily removable from a drinking water supply apparatus, and has a built-in filtration filter with high efficiency of purifying raw water of a bottle. The water purifier is removable from a drinking water supply apparatus, and the drinking water supply apparatus including a bottle for containing water and a main body which has a recess into which a neck of the bottle is insertable. The water purifier is characterized by being placed between the recess of the main body and the neck of the bottle.Type: ApplicationFiled: May 17, 2005Publication date: January 24, 2008Applicant: MITSUBISHI RAYON CO., LTDInventors: Manabu Yanou, Futomitsu Horiuchi, Hisashi Yano
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Publication number: 20070145591Abstract: The semiconductor device manufacturing method includes the steps of: applying a first wire including a barrier metal film, a seed film, and a wiring material film in a first wire trench formed in a first interlayer dielectric film; after a second interlayer dielectric film is formed on the first interlayer dielectric film, forming a via hole and a second wire trench in the second interlayer dielectric film so as to expose the wiring material film; applying a barrier metal film on the semiconductor device; and after the barrier metal film on the wiring material film is removed by using, for example, a re-sputtering process, applying a barrier metal film on the wiring material film. The re-sputtering process can remove an oxide film of impurity metal in the seed film applied on the wiring material film.Type: ApplicationFiled: December 28, 2006Publication date: June 28, 2007Inventors: Hisashi Yano, Masakazu Hamada, Kazuyoshi Maekawa, Kenichi Mori
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Publication number: 20070145600Abstract: A semiconductor device includes an embedded wire in a first wire trench formed in a first interlayer dielectric film, the embedded wire having a barrier metal, a first seed film, a second seed film, and a copper film. The first seed film is formed by a copper film containing metal, and the second film is formed by a copper film. The second seed film suppresses that the metal contained in the first seed film diffuses into a wiring material film in a manufacturing process.Type: ApplicationFiled: December 28, 2006Publication date: June 28, 2007Inventors: Hisashi Yano, Masakazu Hamada, Kazuyoshi Maekawa, Kenichi Mori