Patents by Inventor Hisataka Hayashi
Hisataka Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11651969Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.Type: GrantFiled: March 16, 2020Date of Patent: May 16, 2023Assignee: Kioxia CorporationInventors: Chihiro Abe, Toshiyuki Sasaki, Hisataka Hayashi, Mitsuhiro Omura, Tsubasa Imamura
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Publication number: 20230114349Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.Type: ApplicationFiled: December 14, 2022Publication date: April 13, 2023Applicant: Kioxia CorporationInventors: Chihiro ABE, Toshiyuki SASAKI, Hisataka HAYASHI, Mitsuhiro OMURA, Tsubasa IMAMURA
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Publication number: 20210319986Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.Type: ApplicationFiled: June 23, 2021Publication date: October 14, 2021Applicant: c/o Toshiba Memory CorporationInventors: Yosuke SATO, Akio UI, Hisataka HAYASHI
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Publication number: 20210020450Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.Type: ApplicationFiled: March 16, 2020Publication date: January 21, 2021Applicant: Kioxia CorporationInventors: Chihiro ABE, Toshiyuki Sasaki, Hisataka Hayashi, Mitsuhiro Omura, Tsubasa Imamura
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Patent number: 10388544Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.Type: GrantFiled: February 19, 2015Date of Patent: August 20, 2019Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron LimitedInventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
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Patent number: 10381198Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.Type: GrantFiled: September 25, 2013Date of Patent: August 13, 2019Assignee: Toshiba Memory CorporationInventors: Akio Ui, Hisataka Hayashi, Kazuhiro Tomioka, Hiroshi Yamamoto, Tsubasa Imamura
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Patent number: 10332906Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.Type: GrantFiled: July 27, 2017Date of Patent: June 25, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Kaori Narumiya, Hisataka Hayashi, Keisuke Kikutani, Akio Ui, Yosuke Sato
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Publication number: 20180145086Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.Type: ApplicationFiled: July 27, 2017Publication date: May 24, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Kaori NARUMIYA, Hisataka HAYASHI, Keisuke KIKUTANI, Akio UI, Yosuke SATO
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Publication number: 20170186589Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.Type: ApplicationFiled: March 17, 2017Publication date: June 29, 2017Inventors: Yosuke SATO, Akio UI, Hisataka HAYASHI
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Publication number: 20170169996Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.Type: ApplicationFiled: February 24, 2017Publication date: June 15, 2017Inventors: Akio UI, Hisataka HAYASHI, Kazuhiro TOMIOKA, Hiroshi YAMAMOTO, Tsubasa IMAMURA
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Patent number: 9583360Abstract: In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.Type: GrantFiled: March 20, 2012Date of Patent: February 28, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Akio Ui, Hisataka Hayashi, Keisuke Kikutani
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Publication number: 20160027619Abstract: A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.Type: ApplicationFiled: July 21, 2015Publication date: January 28, 2016Inventors: Yosuke SATO, AKIO UI, HISATAKA HAYASHI
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Patent number: 9111875Abstract: According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide.Type: GrantFiled: March 10, 2014Date of Patent: August 18, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Yamamoto, Tsubasa Imamura, Hisataka Hayashi, Mitsuhiro Omura
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Publication number: 20150162223Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.Type: ApplicationFiled: February 19, 2015Publication date: June 11, 2015Inventors: Akio UI, Hisataka HAYASHI, Takeshi KAMINATSUI, Shinji HIMORI, Norikazu YAMADA, Takeshi OHSE, Jun ABE
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Publication number: 20150011089Abstract: According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide.Type: ApplicationFiled: March 10, 2014Publication date: January 8, 2015Inventors: Hiroshi Yamamoto, Tsubasa Imamura, Hisataka Hayashi, Mitsuhiro Omura
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Patent number: 8840753Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.Type: GrantFiled: October 13, 2009Date of Patent: September 23, 2014Assignees: Tokyo Electron Limited, Kabushiki Kaisha ToshibaInventors: Masanobu Honda, Kazuya Nagaseki, Koichiro Inazawa, Shoichiro Matsuyama, Hisataka Hayashi
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Patent number: 8821744Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.Type: GrantFiled: March 18, 2011Date of Patent: September 2, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Akio Ui, Hisataka Hayashi
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Patent number: 8821684Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.Type: GrantFiled: January 30, 2009Date of Patent: September 2, 2014Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron LimitedInventors: Akio Ui, Naoki Tamaoki, Takashi Ichikawa, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
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Publication number: 20140083977Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.Type: ApplicationFiled: September 25, 2013Publication date: March 27, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akio UI, Hisataka Hayashi, Kazuhiro Tomioka, Hiroshi Yamamoto, Tsubasa Imamura
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Publication number: 20130344698Abstract: According to one embodiment, a mask layer is formed on a film to be processed. A resist film containing a desired pattern is formed on the mask layer. Etching is performed on the above mentioned mask layer with an etching gas that does not contain fluorine. The method also includes removing the resist film. After the resist film is removed, using the mask layer as a mask, an etching is performed on the to be processed film using a fluorocarbon gas.Type: ApplicationFiled: March 4, 2013Publication date: December 26, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Shunsuke OCHIAI, Hisataka HAYASHI, Yusuke KASAHARA