Abstract: The substrate processing apparatus includes a process chamber; a susceptor configured to support a wafer; lifter pins configured to support the wafer on the susceptor; a gas supply unit configured to supply a gas into the process chamber; a heating unit configured to heat the wafer; an excitation unit configured to excite the gas supplied into the process chamber; an exhaust unit configured to exhaust the inside of the process chamber; and a controller. The controller controls a reducing gas to be supplied into the process chamber in a state in which the wafer is supported by the lifter pins, and controls the gas supply unit to supply an oxidizing gas and a reducing gas into the process chamber in a state in which the wafer is supported by the susceptor.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes: a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees.

Abstract: In a receiver with a demodulator and a decoder performing iterative processing, a solution is provided for reducing the implementation cost of and improving the throughput of an interleaver and a deinterleaver. A receiver includes a symbol demapper outputting first extrinsic information by using one received symbol and a priori information, a check node decoder outputting second extrinsic information by using first extrinsic information and a priori information, a deinterleaver deinterleaving second extrinsic information, a variable node decoder outputting third extrinsic information by using deinterleaved second extrinsic information as a priori information, and an interleaver interleaving third extrinsic information output from the variable node decoder. The check node decoder outputs fourth extrinsic information by using interleaved third extrinsic information as a priori information and the fourth extrinsic information is used as a priori information by the symbol demapper.

Abstract: To provide a radio base station and a control method thereof wherein a simple way is used to relax the load concentration of a power control and also relax the control delay. A radio base station and a control method thereof wherein a frame generating part inserts a dummy TPC command, and a power setting part sets a TPC command, whereby a process of deciding the TPC command to be inserted can be delayed by the time required for the processes done in the frame generating part, a modulating part and a spreading part and wherein the process of deciding the TPC command and a process of deciding a power value are separated from and done at different timings from a process of controlling a TPC command insertion status and a process of controlling a power setting status, with the result that even when the processes are concentrated, a load dispersion can be done.

Abstract: A base station judges whether backup channel of the base station has therein a channel which is not an operating channel of another base station configuring an adjacent cell by the channel management unit, and, if there is at least one channel which is not an operating channel of the another base station, performs fairness processing according to a prescribed etiquette to have one of the channels as an operating channel of the base station, and, if not, determines a base station which requests a release of an operating channel from the another based on the basis of a degree of satisfaction defined as a function of an offered communication traffic within a cell, a transmission rate depending on a propagation environment between the base station and a wireless communication terminal and an actually allocated operating channel number, and performs negotiation processing to cause a release of an operating channel.

Abstract: In a wireless communication system for performing wireless communication using a white space, a receiving station includes an interference suppression processing part which performs processing to reduce interference which is received by the signal transmitted from a transmitting station at a frequency of the white space, a receiving quality estimation part which estimates communication quality of the communication using the frequency of the white space based on the signal processed by the interference suppression processing part, and a receiving quality informing part which transmits to the transmitting station the communication quality information estimated by the receiving quality estimation part.

Abstract: To provide a substrate processing apparatus, including a control unit that performs control to transfer a prescribed substrate into each chamber, wherein when error is detected during transfer of the substrate, the control unit performs control to: specify a place where the error is generated; select a fallback operation table according to a processing status of the substrate, which is the table defining a processing content for each part of the substrate processing apparatus including the place where the error is generated; and transfer the substrate based on the selected fallback operation table.

Abstract: Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.

Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.

Abstract: A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer.

Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: forming a thin film containing a predetermined element on a substrate by repeating a cycle, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer; and modifying a surface of the second layer by supplying a hydrogen-containing gas to the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.

Abstract: Provided is a substrate processing apparatus capable of increasing a conductance of an exhaust system while preventing or suppressing an increase in footprint of an apparatus, thereby reducing a pressure thereof. The substrate processing apparatus includes a process container (203) configured to accommodate a plurality of substrates (200) stacked together, process gas supply units (232a, 232b, 249a, and 249b) configured to supply process gases for processing the plurality of substrates (200) into the process container (203), and an exhaust unit (300) configured to exhaust the process container (203). The exhaust unit (300) includes a vacuum pump (246), and exhaust pipes configured to connect the process container (203) and the vacuum pump (246). At least a portion of the exhaust pipes has a rib structure (370), and includes pipes (331 to 333) in which cross-sections perpendicular to an exhaust direction have a rectangular or oval shape.

Abstract: A method of manufacturing a semiconductor device, includes supplying a first etching gas and a second etching gas having a decomposition rate lower than that of the first etching gas from one end of a substrate accommodating region in a process chamber where a plurality of substrates are stacked while exhausting an inside of a process chamber from other end of the substrate accommodating region; and etching a first portion of the plurality of substrate at the one end of the substrate accommodating region using a portion of radicals generated from the first etching gas and second etching gas, and etching a second portion of the plurality of substrates at the other end of the substrate accommodating region using at least a portion of a remaining radicals of the radicals generated from the first etching gas and second etching gas.

Abstract: There is provided a substrate processing method to suppress popping while increasing the throughput in a photoresist removing process. The substrate processing method comprises: loading a substrate, which is coated with photoresist into which a dopant is introduced, into a process chamber; heating the substrate; supplying a reaction gas to the process chamber, wherein the reaction gas contains at least oxygen and hydrogen components, and concentration of the hydrogen component ranges from 60% to 70%; and processing the substrate in a state where the reaction gas is excited into plasma. In the heating of the substrate, the substrate may be heated to 220° C. to 300° C. In the heating of the substrate, the substrate may be heated to 250° C. to 300° C.

Abstract: A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.

Abstract: A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.

Abstract: During a carrying operation, the position, transportation origin, and transportation destination of a carrier or a boat can be easily checked. A carrying system is configured to carry a substrate, a manipulation unit is configured to display an operation state of the carrying system on a manipulation screen, and a control unit is configured to control an operation of the carrying system. The manipulation unit displays a carrying system icon indicating the carrying system which is a carrying target object and a carrying-out icon at predetermined positions of the manipulation screen corresponding to a transportation origin of the carrying system, and a carrying-in icon at a predetermined position of the manipulation screen corresponding to the transportation destination of the carrying system.