Abstract: A wireless communications device and method carries out a process including estimating channel information based on a received signal; generating pseudo-transmission signal point candidates based on the channel information and/or transmission signal point candidates; and generating a replica of the received signal based on the pseudo-transmission signal point candidates and the estimated channel information. The process further includes performing matrix operations on the basis of the received signal and the replica thereof; selecting pseudo-transmission signal point candidates which have a greater effect on likelihood calculations; reverting the selected pseudo-transmission signal point candidates to original transmission signal point candidates and calculating final likelihoods; and restoring the received signal on the basis of the calculated likelihoods.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber, and removing a deposit from at least a portion of an inside of the process chamber after forming the film, wherein removing the deposit includes performing a cycle a predetermined number of times, the cycle including a first process of supplying a first gas for etching the deposit into the process chamber and a second process of supplying a second gas into the process chamber so as to increase a pressure in the process chamber, the second gas being incapable of etching a member constituting the process chamber or having an etchability against the member lower than that of the first gas.

Abstract: The invention aims to provide substrate treatment equipment that can automatically collect a substrate in a normal condition without needing manual operation. The equipment includes a substrate holder 26 for holding substrates 12 in a multistage manner and a substrate transfer unit 34 for transferring the substrates 12 into the substrate holder 26, wherein a substrate holding condition of the substrate holder 26 is sensed by a sensing section 60. The sensing section 60 has photo-sensors 64a, 64b, and sensing waveforms sensed by the photo-sensors 64a, 64b are compared with a normal waveform. A control section 66 is provided, which controls a substrate transfer unit 34 such that substrates 12 other than at least a substrate 12 that was determined to be abnormal are transferred by the unit.

Abstract: A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times. The cycle includes supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and exhausting an inside of the processing chamber.

Abstract: To provide a substrate processing apparatus, including: a plurality of process chambers in which a prescribed number of each type of substrates is processed; and a controller configured to decide the number of dummy substrates so that the number of the dummy substrates used in each process chamber is approximately the same between the process chambers, when the number of the dummy substrates used in each process chamber is decided so that the number of each type of substrates used in each process chamber reaches the prescribed number.

Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.

Abstract: A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

Abstract: A substrate processing apparatus includes a process chamber accommodating a substrate including a thin film formed at a film-forming temperature; a gas supply unit for supplying a process gas including oxygen and/or nitrogen onto the substrate; an excitation unit for exciting the process gas supplied into the process chamber; a heating unit for heating the substrate; an exhaust unit for exhausting an inside of the process chamber; and a control unit for controlling the gas supply unit, the excitation unit, the heating unit and the exhaust unit such that a temperature of the substrate is equal to or lower than the film-forming temperature when the substrate is processed by heating the substrate by the heating unit, exciting the process gas supplied from the gas supply unit by the excitation unit, and supplying the process gas excited by the excitation unit onto a surface of the substrate.

Abstract: A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container.

Abstract: A semiconductor device manufacturing method includes loading a substrate to a processing chamber, a gate insulating film or a capacitor insulating film being formed on a surface of the substrate; forming an electrode, which includes a conductive oxide film and to which an additive that modulates a work function of the conductive oxide film is added, on the substrate; and unloading the substrate, on which the electrode is formed, from the processing chamber.

Abstract: A substrate processing apparatus includes: a process chamber accommodating a substrate including a polysilicon film having an oxygen-containing layer formed thereon; a heating unit in the process chamber to heat the substrate; a gas supply unit to supply a process gas containing nitrogen and hydrogen to the substrate in the process chamber; an excitation unit to excite the process gas supplied into the process chamber; an exhaust unit to exhaust an inside of the process chamber; and a control unit to control at least the heating unit, the gas supply unit, the excitation unit and the exhaust unit for modifying the oxygen-containing layer into an oxynitride or nitride layer by heating the substrate to a predetermined temperature using the heating unit, exciting the process gas supplied by the gas supply unit using the excitation unit, and supplying the process gas excited by the excitation unit to the substrate.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates.

Abstract: An information managing method for managing information based upon an electronic message containing apparatus information or event information transmitted from a substrate processing apparatus, the information managing method comprising: storing the apparatus information of the substrate processing apparatus at a transmission time of the electronic message in a first apparatus information storage unit; comparing the event information with a condition for accumulating the apparatus information when the electronic message is transmitted; and accumulating the apparatus information in a second apparatus information storage unit by associating the apparatus information with a time stamp of a generation of the event information when the condition is satisfied.

Abstract: A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate an atomic oxygen, and oxidizing the element-containing layer by the atomic oxygen.

Abstract: A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated.