Abstract: To provide a means capable of simultaneously and accurately analyzing a component derived from a carrier for liquid phase peptide synthesis with, for example, a target peptide. A method for simultaneously analyzing a carrier for liquid phase peptide synthesis, a component derived from the carrier for liquid phase peptide synthesis, an amino acid to which the carrier for liquid phase peptide synthesis is bound, and a peptide compound to which the carrier for liquid phase peptide synthesis is bound, with a target peptide or final target peptide, the analysis method using high-performance liquid chromatography or supercritical fluid chromatography using an alcohol as an eluent.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: A semiconductor device includes a plurality of first trenches each having a stripe-shape, extending in parallel to each other, a first mesa region, a second mesa region, a first interlayer insulating film covering the first mesa region and the second mesa region, and a first contact hole penetrating the first interlayer insulating film to the first mesa region, and extending along a longitudinal direction of the first trenches. The first mesa region includes emitter regions of a first conductivity type periodically provided along the longitudinal direction of the first trenches in a plan view, contact regions of a second conductivity type provided such that each of the emitter regions is interposed between the contact regions along the longitudinal direction in the plan view, and a base region of the second conductivity type provided immediately below the emitter regions and the contact regions.

Abstract: A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.

Abstract: There is provided a head-rest of a car sheet which is configured to includes: a skin configured to cover a surface of the head-rest; a foamed material filled in the head-rest covered by the skin; and a stay extending to an outside from the skin in which the foamed material is filled, wherein the head-rest has a gate shape by indenting a center portion of a lower surface of the head-rest, and a groove portion is formed at the indented center portion of the gate shape by making end portions of the skin abut against each other, and members which are softer than the skin are seamed to the respective end portions of the skin which abut against each other in the groove portion.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: An ophthalmic laser treatment apparatus for generating plasma by focusing a treatment laser beam to treat a treatment target portion of a patient's eye with the plasma includes: an irradiation optical system configured to irradiate the treatment laser beam to the patient's eye; a position adjusting unit configured to adjust a focusing position of the treatment laser beam in an optical axis direction with respect to a predetermined focusing reference position; an energy adjusting unit configured to adjust irradiation energy of the treatment laser beam; a storage unit configured to store evaluation information to evaluate a permissible combination of the focusing position and the irradiation energy with respect to the focusing position; and an evaluation unit configured to evaluate a combination of the focusing position adjusted by the position adjusting unit and the irradiation energy adjusted by the energy adjusting unit based on the evaluation information.

Abstract: In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided. The n+-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n+-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n?-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided. The n+-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n+-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n?-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Abstract: An alloy material includes: a composition, in a composition range of a ternary alloy of silver (Ag), palladium (Pd), and copper (Cu), the composition containing 20 to 30 wt % of Ag, 35 to 55 wt % of Pd, and 20 to 40 wt % of Cu. The composition as a base is added with tin (Sn) in a range of 0.5 to 2.5 wt %, further added with any one of or a combination of cobalt (Co), chromium (Cr), and zinc (Zn) in a range of 0.1 to 1.0 wt %, and added with 0.01 to 0.1 wt % of either one of or a combination of iridium (Ir) and ruthenium (Ru).

Abstract: Among trenches disposed in a striped-shape parallel to a front surface of a semiconductor substrate, a gate electrode at a gate potential is provided in a gate trench, via a gate insulating film; and in a dummy trench, a dummy gate electrode at an emitter electric potential is provided, via a dummy gate insulating film. Among mesa regions, in a first mesa region functioning as a MOS gate, a first p-type base region is provided in a surface region overall. In a second mesa region not functioning as a MOS gate, a second p-type base region is selectively provided at a predetermined interval, along a first direction. At least one of the trenches on each side of a mesa region is a gate trench and at at least one side wall of the gate trench, a MOS gate is driven. As a result, the ON voltage may be reduced.

Abstract: A vehicle seat is provided which includes a protruding corner formed by joining a first surface and a second surface. The protruding corner includes a pad, a surface cover covering a surface of the pad, and a contour defining plate that is provided on a back side of the surface cover at a position corresponding to the second surface of the protruding corner, the contour defining plate defining the contour of the protruding corner. The contour defining plate has a first edge arranged along a top portion of the protruding corner and a second edge different from the first edge, the contour defining plate not being fixed to the surface cover at the first edge, but fixed to the surface cover at the second edge.

Abstract: There is provided a head-rest of a car sheet which is configured to includes: a skin configured to cover a surface of the head-rest; a foamed material filled in the head-rest covered by the skin; and a stay extending to an outside from the skin in which the foamed material is filled, wherein the head-rest has a gate shape by indenting a center portion of a lower surface of the head-rest, and a groove portion is formed at the indented center portion of the gate shape by making end portions of the skin abut against each other, and members which are softer than the skin are seamed to the respective end portions of the skin which abut against each other in the groove portion.

Abstract: A vehicle seat is provided which includes a protruding corner formed by joining a first surface and a second surface. The protruding corner includes a pad, a surface cover covering a surface of the pad, and a contour defining plate that is provided on a back side of the surface cover at a position corresponding to the second surface of the protruding corner, the contour defining plate defining the contour of the protruding corner. The contour defining plate has a first edge arranged along a top portion of the protruding corner and a second edge different from the first edge, the contour defining plate not being fixed to the surface cover at the first edge, but fixed to the surface cover at the second edge.

Abstract: A laser treatment apparatus configured to emit laser light onto a tissue of a patient's eye, the laser treatment apparatus includes: a laser scanner configured to scan laser light emitted from a laser light source and switch a position of the tissue onto which laser light is emitted; a processor; and memory storing computer readable instructions, which are executed by the processor, causing the laser treatment apparatus to: (a) emit the laser light onto a first spot; (b) stop emitting the laser light onto the first spot for a stop time; (c) emit the laser light onto at least one second spot other than the first spot during the stop time; (d) emit the laser light onto the first spot again after the stop time elapses; and repeat (b), (c) and (d) several times to execute intermittent irradiation treatment onto a plurality of spots multiple times.

Abstract: A vehicle seat includes: a pad including: a first pad part; a second pad part; a step portion formed along at least a part of the boundary; and a groove portion extending from the step portion into between the first and second pad parts over the whole length of the step portion; and a trim cover formed by sewing multiple skin pieces together, the skin pieces including: a first body configured to cover the surface of the first pad part following the surface of the step portion; a first gore configured to cover the surface of the step portion; a second body configured to cover the surface of the second pad part following the surface of the step portion; and a second gore jointed to the second body, wherein an edge of the first gore and an edge of the second gore are respectively stored in the groove portion.

Abstract: The vehicle seat is configured to improve child seat mountability, and to prevent deterioration in appearance design when the child seat is demounted. The vehicle seat includes an anchor storage recess formed in a pad that constitutes the seat for storing an anchor to be engaged with an engagement member attached to a child seat. The anchor storage recess is covered with a skin material having a slit. The slit has an inverse T-like shape.

Abstract: In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided. The n+-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n+-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n?-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Abstract: Among trenches disposed in a striped-shape parallel to a front surface of a semiconductor substrate, a gate electrode at a gate potential is provided in a gate trench, via a gate insulating film; and in a dummy trench, a dummy gate electrode at an emitter electric potential is provided, via a dummy gate insulating film. Among mesa regions, in a first mesa region functioning as a MOS gate, a first p-type base region is provided in a surface region overall. In a second mesa region not functioning as a MOS gate, a second p-type base region is selectively provided at a predetermined interval, along a first direction. At least one of the trenches on each side of a mesa region is a gate trench and at at least one side wall of the gate trench, a MOS gate is driven. As a result, the ON voltage may be reduced.