Abstract: A seat cover includes: a surface member; and a pocket including: a bag part arranged on a back surface side of the surface member and sewn on a folded portion of the surface member folded toward the back surface side along an edge of a pocket opening; a bead part interposed between the bag part and the folded portion extending along at least one of a pair of longitudinal edges of the pocket opening, sewn on the folded portion and the bag part, and arranged to protruding into the pocket opening; and a core member inserted into the bead part, wherein: the bead part and the core member respectively include extension portions extending beyond a pair of lateral edges of the pocket opening in a longitudinal direction of the pocket opening; and the extension portions of the bead part and the core member are fixed to each other.

Abstract: In an automotive carburetor, the time delay in the response of the engine to the change in the cross sectional area of the air passage is minimized, and a high level of freedom in selecting the communication cross section area of the air passage and the air fuel ratio for the given load of the engine. The carburetor (1) comprises a fuel passage (13) including a fuel nozzle (16) for supplying fuel to the intake passage, a first air passage (14) communicating with the fuel passage to supply air to the fuel passage, a variable communication unit (21, 41) provided in a part of the first air passage and moveable between an open position for communicating the first air passage and a closed position for shutting off the first air passage and a switch mechanism (22, 43) for moving the variable communication unit between the open position and the closed position in dependence on a load of the engine.

Abstract: An alloy material includes: a composition, in a composition range of a ternary alloy of silver (Ag), palladium (Pd), and copper (Cu), the composition containing 20 to 30 wt % of Ag, 35 to 55 wt % of Pd, and 20 to 40 wt % of Cu. The composition as a base is added with tin (Sn) in a range of 0.5 to 2.5 wt %, further added with any one of or a combination of cobalt (Co), chromium (Cr), and zinc (Zn) in a range of 0.1 to 1.0 wt %, and added with 0.01 to 0.1 wt % of either one of or a combination of iridium (Ir) and ruthenium (Ru).

Abstract: A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation.

Abstract: An ophthalmic laser treatment apparatus includes: an irradiation optical system including an optical scanner for two-dimensionally scanning spots of a treatment laser beam and an aiming beam on eye tissue; a control unit to control the irradiation optical system to irradiate the treatment beam to a spot position based on an irradiation pattern of spots for treatment beam irradiation and based on an aiming rule associated with the irradiation pattern to irradiate the aiming beam to indicate the treatment beam spot position; and a movement unit to move an irradiation position of each beam. The control unit irradiates the treatment beam to a sequence of spots from a n-th position to a m-th position in association with the irradiation pattern, and then controls the movement unit and irradiates the aiming beam based on the aiming rule to a position different from the spot position just irradiated by the treatment beam.

Abstract: A vehicle seat includes: a pad including: a first pad part; a second pad part; a step portion formed along at least a part of the boundary; and a groove portion extending from the step portion into between the first and second pad parts over the whole length of the step portion; and a trim cover formed by sewing multiple skin pieces together, the skin pieces including: a first body configured to cover the surface of the first pad part following the surface of the step portion; a first gore configured to cover the surface of the step portion; a second body configured to cover the surface of the second pad part following the surface of the step portion; and a second gore jointed to the second body, wherein an edge of the first gore and an edge of the second gore are respectively stored in the groove portion.

Abstract: The vehicle seat is configured to improve child seat mountability, and to prevent deterioration in appearance design when the child seat is demounted. The vehicle seat includes an anchor storage recess formed in a pad that constitutes the seat for storing an anchor to be engaged with an engagement member attached to a child seat. The anchor storage recess is covered with a skin material having a slit. The slit has an inverse T-like shape.

Abstract: A semiconductor device includes: an interlayer insulating film covering: a cathode region and an anode region to form a pn junction with each other; a cathode electrode provided on the interlayer insulating film and connected to the cathode region through a first contact hole; and an anode electrode provided on the interlayer insulating film and connected to the anode region through a second contact hole. Among current paths in the cathode and anode regions, the current path in one of the cathode and anode regions that has a larger sheet resistance is shorter than the other current path, the current path in the cathode region extending from an interface of the pn junction to an end of the first contact hole closest to the interface, the current path in the anode region extending from the interface to an end of the second contact hole closest to the interface.

Abstract: A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including first trench gate structures respectively contributing to control of the element and second trench gate structures respectively not contributing to the control of the element, the semiconductor device including an electrode portion having a potential other than a gate potential, and an electrode pad that is disposed on a front face of a semiconductor substrate, wherein the electrode pad is used as a terminal to apply a predetermined voltage to gate insulator films, in screening that is executed by applying the predetermined voltage to the gate insulator films respectively in contact with the gate electrode connected to the electrode pad and that is executed before the electrode pad is short-circuited to the electrode portion.

Abstract: An ophthalmic laser treatment apparatus, comprising: an emitted treatment laser beam; an emitted aiming beam; an irradiation unit including a zoom lens and a scanner for scanning in two dimensions, and being arranged to irradiate both beams to the eye; an irradiation pattern setting unit including a switch for setting an irradiation pattern in which a plurality of spots is arranged; and a controller for controlling the aiming beam based on the set pattern during aiming before irradiation of the treatment beam, the controller being configured to divide the spots in the set pattern into two or more groups and switch the positions of the spots of the aiming beam at a predetermined time interval in each group to irradiate the aiming beam so that the irradiation spots of the aiming beam in a group before switching and another group after switching are not recognized simultaneously by an operator.

Abstract: An ophthalmic laser treatment apparatus for generating plasma by focusing a treatment laser beam to treat a treatment target portion of a patient's eye with the plasma includes: an irradiation optical system configured to irradiate the treatment laser beam to the patient's eye; a position adjusting unit configured to adjust a focusing position of the treatment laser beam in an optical axis direction with respect to a predetermined focusing reference position; an energy adjusting unit configured to adjust irradiation energy of the treatment laser beam; a storage unit configured to store evaluation information to evaluate a permissible combination of the focusing position and the irradiation energy with respect to the focusing position; and an evaluation unit configured to evaluate a combination of the focusing position adjusted by the position adjusting unit and the irradiation energy adjusted by the energy adjusting unit based on the evaluation information.

Abstract: A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.

Abstract: A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer.

Abstract: In an automotive carburetor, the time delay in the response of the engine to the change in the cross sectional area of the air passage is minimized, and a high level of freedom in selecting the communication cross section area of the air passage and the air fuel ratio for the given load of the engine. The carburetor (1) comprises a fuel passage (13) including a fuel nozzle (16) for supplying fuel to the intake passage, a first air passage (14) communicating with the fuel passage to supply air to the fuel passage, a variable communication unit (21, 41) provided in a part of the first air passage and moveable between an open position for communicating the first air passage and a closed position for shutting off the first air passage and a switch mechanism (22, 43) for moving the variable communication unit between the open position and the closed position in dependence on a load of the engine.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including first trench gate structures respectively contributing to control of the element and second trench gate structures respectively not contributing to the control of the element, the semiconductor device including an electrode portion having a potential other than a gate potential, and an electrode pad that is disposed on a front face of a semiconductor substrate, wherein the electrode pad is used as a terminal to apply a predetermined voltage to gate insulator films, in screening that is executed by applying the predetermined voltage to the gate insulator films respectively in contact with the gate electrode connected to the electrode pad and that is executed before the electrode pad is short-circuited to the electrode portion.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: A fabrication method of a semiconductor device that includes trench gate structures each having a gate electrode extending in a depth-direction of an element, where first trench gate structures contribute to controlling the element and second trench gate structures do not contribute. The fabrication method includes forming the trench gate structures on a front face of a semiconductor substrate; forming on the front face, an electrode pad connected to the gate electrode of at least one trench gate structure; executing screening by applying a predetermined voltage between the electrode pad and an electrode portion having a potential other than a gate potential, to apply the predetermined voltage to gate insulator films in contact with each gate electrode connected to the electrode pad; and forming the second trench gate structures having the gate electrodes connected to the electrode pad, by short-circuiting the electrode portion to the electrode pad after executing screening.

Abstract: A seat cover includes: a surface member; and a pocket including: a bag part arranged on a back surface side of the surface member and sewn on a folded portion of the surface member folded toward the back surface side along an edge of a pocket opening; a bead part interposed between the bag part and the folded portion extending along at least one of a pair of longitudinal edges of the pocket opening, sewn on the folded portion and the bag part, and arranged to protruding into the pocket opening; and a core member inserted into the bead part, wherein: the bead part and the core member respectively include extension portions extending beyond a pair of lateral edges of the pocket opening in a longitudinal direction of the pocket opening; and the extension portions of the bead part and the core member are fixed to each other.

Abstract: A semiconductor device includes: an interlayer insulating film covering: a cathode region and an anode region to form a pn junction with each other; a cathode electrode provided on the interlayer insulating film and connected to the cathode region through a first contact hole; and an anode electrode provided on the interlayer insulating film and connected to the anode region through a second contact hole. Among current paths in the cathode and anode regions, the current path in one of the cathode and anode regions that has a larger sheet resistance is shorter than the other current path, the current path in the cathode region extending from an interface of the pn junction to an end of the first contact hole closest to the interface, the current path in the anode region extending from the interface to an end of the second contact hole closest to the interface.