Abstract: According to one embodiment, a semiconductor substrate includes a first basement, a gate line, a source line, an insulating film, a first pixel electrode, and a first transistor and a second transistor connected parallel at positions between the source line and the first pixel electrode. Each of a first semiconductor layer of the first transistor and a second semiconductor layer of the second transistor includes a first region, a second region, and a channel region. The first semiconductor layer and the second semiconductor layer are in contact with a first surface that is a surface of the insulating film on the source line side. The channel region of each of the first semiconductor layer and the second semiconductor layer wholly overlaps the gate line.

Abstract: A semiconductor device that occupies a small area is provided. The semiconductor device includes a first transistor including a first oxide semiconductor; a second transistor including a second oxide semiconductor; a capacitor element; a first insulator; and a first conductor in contact with a source or a drain of the second transistor. The capacitor element includes a second conductor, a third conductor, and a second insulator. The first transistor, the second transistor, and the first conductor are placed to be embedded in the first insulator. The second conductor is placed in contact with a top surface of the first conductor and a top surface of a gate of the first transistor. The second insulator is placed over the second conductor and the first insulator. The third conductor is placed to cover the second conductor with the second insulator therebetween.

Abstract: A semiconductor memory device includes an error bit detection unit and a bit counting unit. The error bit detection unit detects whether each bit in read data and each bit in expected data of the semiconductor memory device are consistent, and outputs the error bit data indicating pass/error information. The pass/error information indicates whether each detected bit is consistent. The bit counting unit counts the number of error bits in the error bit data indicating an inconsistency between the read data and the expected data, or counts the number of pass bits in the error bit data indicating consistency between the read data and the expected data. Furthermore, the semiconductor memory device also includes an interface for a read operation to input external expected values and an interface for the read operation interfaces to output the number of error bits or pass bits instead of the read data.

Abstract: Provided is a battery control apparatus capable of preventing battery deterioration from being accelerated. The battery control apparatus is in a vehicle including a battery and a heater, where the battery is a battery to which external power is supplied, the battery supplies power to a motor for vehicle travel, and the heater heats the battery. The battery control apparatus includes: an acquisition section that acquires a temperature of the battery; and a control section that executes, in a case where the temperature of the battery, where the temperature has been acquired, is equal to or lower than a predetermined threshold, control such that the external power is not supplied to the battery and each power of the external power and the power of the battery is supplied to the heater.

Abstract: A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.

Abstract: An amplifier is formed in a wiring layer. A semiconductor device includes a second layer over a first layer with a metal oxide therebetween. The first layer includes a first transistor including a first semiconductor layer containing silicon. The second layer includes an impedance matching circuit, and the impedance matching circuit includes a second transistor including a second semiconductor layer containing gallium. The first transistor forms first coupling capacitance between the first transistor and the metal oxide, and the impedance matching circuit forms second coupling capacitance between the impedance matching circuit and the metal oxide. The impedance matching circuit is electrically connected to the metal oxide through the second coupling capacitance. The metal oxide inhibits the influence of first radiation noise emitted from the impedance matching circuit on the operation of the first transistor.

Abstract: A display control system for displaying a GUI screen on a terminal of a user, the display control system includes: a setting GUI unit, wherein the setting GUI unit is configured to cause the terminal to display a screen depicting a network configuration including a plurality of selectable clouds, and wherein the setting GUI unit is configured to cause the terminal to display a parameter input screen for a connection between a specific cloud and a resource in a case where the specific cloud and the resource to connect to the specific cloud are selected at the terminal.

Abstract: An image processing apparatus that can easily change the categories of the main object, comprises, an object detection unit for detecting an object categorized as one of at least two categories from an image, a setting unit for setting a first category as a priority category on an object having a predetermined priority among one of the objects detected by the object detection unit; and a region designation unit for designating a predetermined region on an object on a display screen, wherein the setting unit can change the priority category from the first category to a second category different from the first category when the predetermined region of the object designated by the region designation unit is the second category.

Abstract: A pseudo-static random access memory includes a control unit, which controls the refresh operations of the memory to be performed as many times as the number of refresh requests that are generated during a period after the first transaction ended and before a second transaction which is after the first transaction.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: An energy usage management with less equipment load and processing load is realized.

Abstract: A pseudo-static random access memory is provided herein, which may improve the speed of data transmission. After a first delay from a command and a row address being input in a first operation, the pseudo-static random access memory inputs or outputs the data in the memory cells corresponding to the input row address and the input column address, which includes a control unit controlling a delay in the second operation less than the initial delay when a specific condition is satisfied. The second operation is executed after the first operation.

Abstract: An image processing apparatus that can easily change the categories of the main object, comprises, an object detection unit for detecting an object categorized as one of at least two categories from an image, a setting unit for setting a first category as a priority category on an object having a predetermined priority among one of the objects detected by the object detection unit; and a region designation unit for designating a predetermined region on an object on a display screen, wherein the setting unit can change the priority category from the first category to a second category different from the first category when the predetermined region of the object designated by the region designation unit is the second category.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: An image processing apparatus that can easily change the categories of the main object, comprises, an object detection unit for detecting an object categorized as one of at least two categories from an image, a setting unit for setting a first category as a priority category on an object having a predetermined priority among one of the objects detected by the object detection unit; and a region designation unit for designating a predetermined region on an object on a display screen, wherein the setting unit can change the priority category from the first category to a second category different from the first category when the predetermined region of the object designated by the region designation unit is the second category.

Abstract: There is provided a tissue elasticity measurement device 100 and a measurement method that allow for quantitative evaluation of biological changes related to tissue elasticity such as liver fibrosis. The tissue elasticity measurement device 100 has a supersonic wave measuring instrument 100a that measures a pulse waveform corresponding to a blood flow velocity by a pulse wave Doppler method, and an information processor 100b that calculates a deviation index value corresponding to a coefficient of variation from a pulse waveform obtained by the supersonic wave measuring instrument 100a.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: A memory system and an operating method thereof are provided. The memory system includes a plurality of pseudo static random access memory chips and a memory controller. The pseudo static random access memory chips are coupled to each other. When receiving an action command, each of the pseudo static random access memory chips determines whether a refresh collision occurs in itself, and generates a collision signal accordingly. The memory controller controls the pseudo static random access memory chips according to the collision signal. All of the pseudo static random access memory chips share their respective collision signals to perform a same latency synchronously.