Patents by Inventor Hitoshi Inaba
Hitoshi Inaba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10113919Abstract: Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.Type: GrantFiled: March 22, 2013Date of Patent: October 30, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka
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Publication number: 20180217007Abstract: A temperature sensor comprises: a pair of lead frames; a sensor portion connected to the lead frames; and an insulating holding part holding the lead frames, wherein the sensor portion comprises: an insulating film having the lead frames bonded on an upper surface; a thermistor portion provided to the insulating film; a pair of electrodes formed on the thermistor portion; a pair of pattern electrodes patterned in the upper surface of the insulating film; and a pair of insulating protective tapes bonded to each other to hold the lead frames and the sensor in a vertical direction, wherein both sides of the insulating film are arranged in the vicinity of and inside outer corners on bonding surface sides of the lead frames, and both sides of the protective tapes are bent outward from both sides of the insulating film toward an upper surface side.Type: ApplicationFiled: July 11, 2016Publication date: August 2, 2018Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Noriaki Nagatomo, Fumio Matsumoto, Hitoshi Inaba, Kazuta Takeshima, Kunio Yamaguchi, Hiroshi Tanaka
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Patent number: 9978484Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.Type: GrantFiled: March 25, 2013Date of Patent: May 22, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Hiroshi Tanaka, Toshiaki Fujita, Noriaki Nagatomo, Kazutaka Fujiwara, Hitoshi Inaba
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Patent number: 9964451Abstract: Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.Type: GrantFiled: March 26, 2013Date of Patent: May 8, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Hiroshi Tanaka, Hitoshi Inaba, Kazuta Takeshima, Noriaki Nagatomo
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Patent number: 9905341Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.Type: GrantFiled: February 26, 2013Date of Patent: February 27, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
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Patent number: 9891117Abstract: The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.Type: GrantFiled: September 17, 2013Date of Patent: February 13, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Hitoshi Inaba, Noriaki Nagatomo
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Patent number: 9851262Abstract: The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.Type: GrantFiled: September 3, 2013Date of Patent: December 26, 2017Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka, Kazuta Takeshima
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Patent number: 9852829Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.Type: GrantFiled: February 21, 2013Date of Patent: December 26, 2017Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
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Patent number: 9448123Abstract: Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion includes an insulating film having a strip shape, a thin film thermistor portion pattern-formed at the center portion of the surface of the insulating film, a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion with facing each other and a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film.Type: GrantFiled: December 17, 2013Date of Patent: September 20, 2016Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Noriaki Nagatomo, Hitoshi Inaba, Kazuta Takeshima, Hiroshi Tanaka
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Publication number: 20150362381Abstract: Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames.Type: ApplicationFiled: December 17, 2013Publication date: December 17, 2015Inventors: Noriaki Nagatomo, Hitoshi Inaba, Kazuta Takeshima, Hiroshi Tanaka
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Publication number: 20150308874Abstract: Provided is a gas flow sensor that includes a heat-sensitive element for measurement disposed inside a duct through which a gas to be measured flows and a support mechanism for supporting the heat-sensitive element for measurement inside the duct. The heat-sensitive element for measurement includes an insulating film; a thin film thermistor portion formed on the surface of the insulating film with a thermistor material; a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and a pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of comb electrodes. The support mechanism is disposed such that the planar direction of the insulating film is parallel to the direction of gas flow in the duct.Type: ApplicationFiled: November 21, 2013Publication date: October 29, 2015Inventors: Noriaki NAGATOMO, Hitoshi INABA
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Publication number: 20150260586Abstract: The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.Type: ApplicationFiled: September 17, 2013Publication date: September 17, 2015Inventors: Hitoshi Inaba, Noriaki Nagatomo
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Publication number: 20150226616Abstract: The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.Type: ApplicationFiled: September 3, 2013Publication date: August 13, 2015Inventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka, Kazuta Takeshima
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Publication number: 20150171489Abstract: Provided is a battery with a temperature control function capable of accurately measuring the temperature of a battery to control its heating. The battery with a temperature control function includes a battery body, and a film heater with a temperature sensor arranged so as to cover at least a part of the surface of the battery body. The film heater with a temperature sensor includes an insulating film, a temperature sensor portion formed on the insulating film, and a heater wire formed thereon through the insulating layer. The heater wire is patterned on the insulating layer. The temperature sensor portion has the thin film thermistor portion made of a thermistor material patterned directly under the heating region of the heater wire and on the insulating film, and a pair pattern electrodes formed on at least the thin film thermistor portion.Type: ApplicationFiled: March 25, 2013Publication date: June 18, 2015Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Hitoshi Inaba, Noriaki Nagatomo, Kazuta Takeshima
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Publication number: 20150092820Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.Type: ApplicationFiled: March 25, 2013Publication date: April 2, 2015Inventors: Hiroshi Tanaka, Toshiaki Fujita, Noriaki Nagatomo, Kazutaka Fujiwara, Hitoshi Inaba
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Publication number: 20150085898Abstract: Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.Type: ApplicationFiled: March 26, 2013Publication date: March 26, 2015Inventors: Hiroshi Tanaka, Hitoshi Inaba, Kazuta Takeshima, Noriaki Nagatomo
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Publication number: 20150071326Abstract: Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.Type: ApplicationFiled: March 22, 2013Publication date: March 12, 2015Inventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka
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Publication number: 20150055682Abstract: Provided is a film-type thermistor sensor which can be surface-mounted and can be directly deposited on a film or the like without baking. The film-type thermistor sensor includes an insulating film; a thin-film thermistor part formed on the front side of the insulating film; the pair of front side pattern electrodes in which a pair of counter electrode parts facing each other is disposed above or below the thin-film thermistor part and is formed on the front side of the insulating film; and a pair of back side pattern electrodes formed on the back side of the insulating film in such a manner as to face a part of the pair of front side pattern electrodes, wherein the front side pattern electrodes and the back side pattern electrodes are electrically connected via via-holes formed so as to penetrate the insulating film.Type: ApplicationFiled: March 25, 2013Publication date: February 26, 2015Inventors: Noriaki Nagatomo, Hiroshi Tanaka, Hitoshi Inaba, Kenji Kubota
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Publication number: 20150036723Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.Type: ApplicationFiled: February 26, 2013Publication date: February 5, 2015Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
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Publication number: 20150023394Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.Type: ApplicationFiled: February 21, 2013Publication date: January 22, 2015Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo