Patents by Inventor Hitoshi Inaba

Hitoshi Inaba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10113919
    Abstract: Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.
    Type: Grant
    Filed: March 22, 2013
    Date of Patent: October 30, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka
  • Publication number: 20180217007
    Abstract: A temperature sensor comprises: a pair of lead frames; a sensor portion connected to the lead frames; and an insulating holding part holding the lead frames, wherein the sensor portion comprises: an insulating film having the lead frames bonded on an upper surface; a thermistor portion provided to the insulating film; a pair of electrodes formed on the thermistor portion; a pair of pattern electrodes patterned in the upper surface of the insulating film; and a pair of insulating protective tapes bonded to each other to hold the lead frames and the sensor in a vertical direction, wherein both sides of the insulating film are arranged in the vicinity of and inside outer corners on bonding surface sides of the lead frames, and both sides of the protective tapes are bent outward from both sides of the insulating film toward an upper surface side.
    Type: Application
    Filed: July 11, 2016
    Publication date: August 2, 2018
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Noriaki Nagatomo, Fumio Matsumoto, Hitoshi Inaba, Kazuta Takeshima, Kunio Yamaguchi, Hiroshi Tanaka
  • Patent number: 9978484
    Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: May 22, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hiroshi Tanaka, Toshiaki Fujita, Noriaki Nagatomo, Kazutaka Fujiwara, Hitoshi Inaba
  • Patent number: 9964451
    Abstract: Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: May 8, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hiroshi Tanaka, Hitoshi Inaba, Kazuta Takeshima, Noriaki Nagatomo
  • Patent number: 9905341
    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: February 27, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
  • Patent number: 9891117
    Abstract: The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: February 13, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hitoshi Inaba, Noriaki Nagatomo
  • Patent number: 9852829
    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: December 26, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
  • Patent number: 9851262
    Abstract: The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: December 26, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka, Kazuta Takeshima
  • Patent number: 9448123
    Abstract: Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion includes an insulating film having a strip shape, a thin film thermistor portion pattern-formed at the center portion of the surface of the insulating film, a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion with facing each other and a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: September 20, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Noriaki Nagatomo, Hitoshi Inaba, Kazuta Takeshima, Hiroshi Tanaka
  • Publication number: 20150362381
    Abstract: Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames.
    Type: Application
    Filed: December 17, 2013
    Publication date: December 17, 2015
    Inventors: Noriaki Nagatomo, Hitoshi Inaba, Kazuta Takeshima, Hiroshi Tanaka
  • Publication number: 20150308874
    Abstract: Provided is a gas flow sensor that includes a heat-sensitive element for measurement disposed inside a duct through which a gas to be measured flows and a support mechanism for supporting the heat-sensitive element for measurement inside the duct. The heat-sensitive element for measurement includes an insulating film; a thin film thermistor portion formed on the surface of the insulating film with a thermistor material; a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and a pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of comb electrodes. The support mechanism is disposed such that the planar direction of the insulating film is parallel to the direction of gas flow in the duct.
    Type: Application
    Filed: November 21, 2013
    Publication date: October 29, 2015
    Inventors: Noriaki NAGATOMO, Hitoshi INABA
  • Publication number: 20150260586
    Abstract: The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.
    Type: Application
    Filed: September 17, 2013
    Publication date: September 17, 2015
    Inventors: Hitoshi Inaba, Noriaki Nagatomo
  • Publication number: 20150226616
    Abstract: The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.
    Type: Application
    Filed: September 3, 2013
    Publication date: August 13, 2015
    Inventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka, Kazuta Takeshima
  • Publication number: 20150171489
    Abstract: Provided is a battery with a temperature control function capable of accurately measuring the temperature of a battery to control its heating. The battery with a temperature control function includes a battery body, and a film heater with a temperature sensor arranged so as to cover at least a part of the surface of the battery body. The film heater with a temperature sensor includes an insulating film, a temperature sensor portion formed on the insulating film, and a heater wire formed thereon through the insulating layer. The heater wire is patterned on the insulating layer. The temperature sensor portion has the thin film thermistor portion made of a thermistor material patterned directly under the heating region of the heater wire and on the insulating film, and a pair pattern electrodes formed on at least the thin film thermistor portion.
    Type: Application
    Filed: March 25, 2013
    Publication date: June 18, 2015
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hitoshi Inaba, Noriaki Nagatomo, Kazuta Takeshima
  • Publication number: 20150092820
    Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.
    Type: Application
    Filed: March 25, 2013
    Publication date: April 2, 2015
    Inventors: Hiroshi Tanaka, Toshiaki Fujita, Noriaki Nagatomo, Kazutaka Fujiwara, Hitoshi Inaba
  • Publication number: 20150085898
    Abstract: Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.
    Type: Application
    Filed: March 26, 2013
    Publication date: March 26, 2015
    Inventors: Hiroshi Tanaka, Hitoshi Inaba, Kazuta Takeshima, Noriaki Nagatomo
  • Publication number: 20150071326
    Abstract: Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.
    Type: Application
    Filed: March 22, 2013
    Publication date: March 12, 2015
    Inventors: Noriaki Nagatomo, Hitoshi Inaba, Hiroshi Tanaka
  • Publication number: 20150055682
    Abstract: Provided is a film-type thermistor sensor which can be surface-mounted and can be directly deposited on a film or the like without baking. The film-type thermistor sensor includes an insulating film; a thin-film thermistor part formed on the front side of the insulating film; the pair of front side pattern electrodes in which a pair of counter electrode parts facing each other is disposed above or below the thin-film thermistor part and is formed on the front side of the insulating film; and a pair of back side pattern electrodes formed on the back side of the insulating film in such a manner as to face a part of the pair of front side pattern electrodes, wherein the front side pattern electrodes and the back side pattern electrodes are electrically connected via via-holes formed so as to penetrate the insulating film.
    Type: Application
    Filed: March 25, 2013
    Publication date: February 26, 2015
    Inventors: Noriaki Nagatomo, Hiroshi Tanaka, Hitoshi Inaba, Kenji Kubota
  • Publication number: 20150036723
    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: February 26, 2013
    Publication date: February 5, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
  • Publication number: 20150023394
    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: February 21, 2013
    Publication date: January 22, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo