Abstract: The present invention relates to metal object-coating method, which method comprises coating a primer composition (I) prepared by adding an inorganic anti-corrosive agent to at least one binder component selected from the group consisting of a binder component (A) containing an epoxy resin and ant least one of amino resin and phenol resin, a binder component (B) containing a polyester resin, epoxy resin and phenol resin, and a binder component (C) containing ?-olefin•?,?-ethylenically unsaturated carboxylic acid copolymer resin onto the surface of a metal object coating substrate to form a primer coating film layer, followed by coating a topcoat coating composition consisting of a thermoplastic resin based coating composition (II) onto the primer coating film layer to form a topcoat coating film layer consisting of a thermoplastic resin coating film layer; and the primer composition used in the method.

Abstract: A particle feed apparatus is combined with a jet mill and has a particle feeder for feeding particles to an air injector that injects particles together with particle carrying air into the jet mill. The particle feed apparatus is a closed structure isolated from the environment. The use of the closed particle feed apparatus prevents the backflow of dust-loaded air that occurs in a milling system formed by combining a jet mill and an open particle feed apparatus. The use of the closed particle feed apparatus improves the working environment, enhances the milling ability of the jet mill and facilitates operations.

Abstract: The present invention relates to a heat insulating finish coating method which comprises coating by at least one coating a heat insulating coating material by use of (I) a porous-shaped roller or (II) a spray coating gun having a nozzle bore diameter of 0.3 to 15 mm to form a thick film having an uneven coating surface, said heat insulating coating material containing (A) a resin emulsion, (B) a hollow bead having a mean particle size of 1 to 300 &mgr;m and (C) a thickening agent and having a viscosity of 2 to 100 Pa·s, said hollow bead (B) being contained in an amount of 20 to 98% by volume based on a solid content of the heat insulating coating material, said thickening agent (B) being contained in an amount of 0.01 to 5% by weight based on a solid content of the heat insulating coating material.

Abstract: A method of manufacturing a semiconductor device, which comprises a step of forming an oxide film by oxidizing a surface of semiconductor layer in an atmosphere containing an oxygen-activated species at a temperature of over 550° C. A method of manufacturing a semiconductor device, which comprises the steps of forming an oxide film by oxidizing a surface of semiconductor in an atmosphere containing an oxygen-activated species, and removing the oxide film so as to expose a surface of the semiconductor. A method of manufacturing a semiconductor device which comprises a step of feeding an oxidizing source gas comprising as a main component oxygen atomic radicals of singlet state in an excited state to a silicon layer thereby to oxidize a surface of the silicon layer, thus forming a silicon oxide film.

Abstract: A surface portion of a semiconductor substrate 41 is serrated at intervals equal to a minimum processing size to form impurity diffusion layers in peaks. These impurity diffusion layers are isolated from each other by valleys. At a valley where a gate is formed, the gate and impurity diffusion layers and in peaks on the two sides of the gate form a MOS transistor. A valley in which no gate is formed functions as an element isolation region. Since a MOS transistor or an element isolation region is formed in one valley, the element area is reduced. A surface of a p-type semiconductor substrate is serrated to form n+-type impurity regions in peaks and floating gates having an upper spired portion in valleys via a silicon oxide film. Control gates are formed on the floating gates via a tunnel oxide film. The lower portion of the control gate has a shape corresponding to the valley and opposes the upper portion of the floating gate by self-alignment.

Abstract: The present invention provides a method of forming a film, having the step of allowing a first chemical substance to be adsorbed on a surface of a silicon substrate by a gaseous phase method, and the step of introducing a gas containing a second chemical substance onto the substrate surface having the first chemical substance adsorbed thereon for forming a silicon compound layer on the silicon substrate, the silicon compound layer consisting essentially of a silicon compound formed by a reaction between the first chemical substance adsorbed on the substrate surface and the second chemical substance.

Abstract: The present invention provides a method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and a semiconductor substrate, the method including the steps of exposing a surface of insulating layer and the substrate surface to a gas plasma which consists of at least one of an inert gas and hydrogen, exposing the insulating layer to a gas containing halogen atoms other than fluorine atoms, and selectively depositing a metal film in the opening of the insulating layer.

Abstract: This invention provides a method of manufacturing a semiconductor device, including the steps of forming an insulating film and a first metal film on one major surface of a semiconductor substrate, each of the insulating film and the first metal film having a partially exposed surface, and selectively forming a second metal film on the exposed surface of the first metal film, wherein formation of the second metal film is performed in an atmosphere containing a gasified silicon compound obtained upon gasifying a liquid silicon compound containing at least one element selected from the group consisting of carbon, hydrogen, oxygen, chlorine, and fluorine, or its reaction product, whereby the exposed surface of the insulating film is chemically modified with the silicon compound or its reaction product.

Abstract: A method of manufacturing a semiconductor device comprising the steps of forming an insulating layer on a first conductive layer deposited on a semiconductor substrate, treating the surface of the insulating layer and the exposed surface of the first conductive layer with a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber housing the sample, and applying high frequency power. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber to adsorb the halogen atoms on the inner wall of the chamber, and applying high frequency power.

Abstract: A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.

Abstract: The present invention relates to an ink jet head manufacturing method including a pressurizing step for forming liquid passages communicating with discharge openings for discharging ink, by pressurizing to bond a base member and a top member together via wall members defining the liquid passages, except for areas where the liquid passages are formed. The present invention further provides an apparatus for carrying out such ink jet head manufacturing method.

Abstract: A thread spreading apparatus for use in an overlock sewing machine capable of performing over-edge chain stitching and other stitching. The thread spreading apparatus uses a lower looper for over-edge chain stitching to allow a needle to surely drop into a triangle defined by a needle thread, a looper thread and the lower looper, thereby enabling multi-thread chain stitching and covering chain stitching to be performed without fail. The apparatus includes a thread spreading hook having hook portions with different heights for retaining needle threads and a projection formed on one of the hook portions. During stitching other than over-edge chain stitching, the hook portions of the thread spreading hook retain the needle threads when two needles drop, thereby allowing each needle to drop into a triangle defined by the looper thread, the lower looper and the corresponding needle thread.

Abstract: A method for forming a refractory metal film on a substrate utilizes a reduction reaction of the halides of the refractory metal with respect to monosilane, disilane, or the halides of monosilane and disilane to form the refractory metal film while suppressing the reaction by adding a hydrogen gas. As a result, the refractory metal film is formed with good quality at a high speed, or deposited selectively on the nitrides, etc., of metal.

Abstract: A method for improving the adhesion between a refractory metal film and a silicon substrate is disclosed, which comprises depositing the refractory metal film on the silicon substrate at a first temperature; and heating the contact surface between the deposited film and the silicon surface at a second temperature between 300.degree. and 600.degree. C., wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.

Abstract: In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.

Abstract: A thin-film depositing apparatus which includes a reaction container adapted to receive a material gas therein, for a thin-film depositing reaction, a substrate supporting member located in a predetermined position in the reaction container in order to set a substrate on which a thin film is to be deposited, heating mechanism for heating the substrate supporting member to deposit the thin film, while heating the substrate, and a cover member covering, in a contacting or noncontacting manner, the whole surface of the substrate supporting member except a substrate bearing surface on which the substrate is to be set. The surface temperature of the cover member is kept lower than that of the substrate, so that an undesired film is restrained from being deposited on the surface of the cover member. Thus, a thin film of good quality can be deposited on the substrate surface with high efficiency.

Abstract: An inorganic coating composition which is incombustible, water resistant and durable comprises an aqueous dispersion of colloidal silica (A), laminar aluminum oxide and/or a luminum hydroxide (B), water-soluble amino-alcohol (C), and one or more members selected from the group consisting of metallic zinc, zinc compounds and oxides and hydroxides of alkaline earth metals (D). The molar ratios of said component (C) to component (A) and said component (D) to component (A) are in the range of 0.01/1.0 to 1.0/1.0 and the weight ratio of said colloidal silica to colloidal silica plus water in said coating composition is not less than 0.1.