Abstract: A conveyance equipment includes swirl flow-forming body, discharge fluid rectification cover and skirt. The swirl flow-forming body has columnar first body. A columnar recess is inward of lower end face of first body. A pair of fluid passages are formed in columnar first body to extend to inside surface of columnar recess and supply fluid into columnar recess to generate swirling flow. The discharge fluid rectification cover has a second body which includes a disk-shaped base plate and a peripheral wall that extends around the periphery of the base plate. The second body is positioned to cover the columnar recess. A suction port is in the bottom plate. A discharge passage is in the peripheral wall to extend generally tangential to the inside surface of peripheral wall. The skirt is cylindrical and is made of an elastic thin film, a top opening of which is connected to the suction port.

Abstract: The present invention provides: industrially desirable and novel optically-active cyclopentenone derivatives; and a novel industrial manufacturing method. The novel optically-active cyclopentenone derivatives and method for manufacturing the same are, respectively: an intermediate for industrially desirable and novel prostaglandin derivatives and the like; and a method for manufacturing the same. It is expected that the present invention will be commercialized and industrialized.

Abstract: The present invention provides: industrially desirable and novel optically-active cyclopentenone derivatives; and a novel industrial manufacturing method. The novel optically-active cyclopentenone derivatives and method for manufacturing the same are, respectively: an intermediate for industrially desirable and novel prostaglandin derivatives and the like; and a method for manufacturing the same. It is expected that the present invention will be commercialized and industrialized.

Abstract: [Problem] The present invention provides an industrially-preferable, cost-efficient, low-cost production method for 4-hydroxy-2-hydroxymethyl-2-cyclopenten-1-one (a compound represented by formula (I)) useful as a medicine, an agricultural chemical, or a raw material or intermediate of a medicine, an agricultural chemical, or the like. [Solution] According to the present invention, this compound represented by formula (I) is produced by subjecting an easily available compound represented by formula (II) (tri-O-acetyl-D-glucal) to a heating reaction in pressurized water.

Abstract: [Problem] The present invention provides an industrially-preferable, cost-efficient, low-cost production method for 4-hydroxy-2-hydroxymethyl-2-cyclopenten-1-one (a compound represented by formula (I)) useful as a medicine, an agricultural chemical, or a raw material or intermediate of a medicine, an agricultural chemical, or the like. [Solution] According to the present invention, this compound represented by formula (I) is produced by subjecting an easily available compound represented by formula (II) (tri-O-acetyl-D-glucal) to a heating reaction in pressurized water.

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract: A GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract: A method of concentrating nanoparticles, having the steps of: adding and mixing an extraction solvent with a nanoparticles-dispersion liquid that nanoparticles are dispersed in a dispersion solvent, thereby concentrating and extracting the nanoparticles into a phase of the extraction solvent, and removing the dispersion solvent by filter-filtrating a liquid of concentrated extract, in which the extraction solvent is substantially incompatible with the dispersion solvent, and the extract solvent can form an interface after the extraction solvent is mixed with the dispersion solvent and left the mixture still; further a method of deaggregating aggregated nanoparticles, having the steps of: applying two or more ultrasonic waves different in frequency to a liquid containing aggregated nanoparticles, and thereby fining and dispersing the aggregated nanoparticles.

Abstract: A GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract: The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Abstract: [Problem] The purpose of the present invention is to provide organic particles containing pharmaceutical particles of which the particles are small and the particle size distribution is narrow, and a manufacturing method for the same. [Solution] Provided are pharmaceutical multimeric particles of which the particles are small and the particle size distribution is narrow and which are characterized in being obtained by pouring into water a solution of a pharmaceutical multimer dissolved in a water-miscible organic solvent, and a manufacturing method for the pharmaceutical multimeric particles. Pharmaceutical dimeric particles thereof are characterized in being obtained by pouring into water a solution of a compound represented by general formula (I) dissolved in a water-miscible organic solvent.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Abstract: There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 ?m and at most 100 ?m from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 ?m. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

Abstract: The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract: A method for fabricating metal-coated organic crystal wherein a reaction of an organic crystal with transition metal salt in alkaline aqueous solution under visible light irradiation, wherein, when energy at the top of valence band of the organic crystal is defined as A (eV) and energy at the bottom of conduction band of the organic crystal is defined as B (eV), redox potential C (V) of transition metal ion or transition metal complex ion, when said transition metal salt is dissolved in the alkaline aqueous solution, these three parameters should satisfy the following relation (1): ?A?4.5?C??B?4.5.

Abstract: An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16?X?0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

Abstract: A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15?X<1, where X is a strained composition). The basal plane of the gallium nitride based semiconductor region is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane of a hexagonal system group III nitride. The basal plane in this range is a semipolar plane.