Abstract: Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.

Abstract: There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 ?m and at most 100 ?m from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 ?m. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

Abstract: A method for preparation of inorganic fine particle-organic crystal hybrid fine particle comprising; pouring an organic material having ?-conjugated bond as a water soluble solution into aqueous dispersion in which inorganic fine particles of 50 nm or less selected from the compound group consisting of metal fine particles, semi-conductor fine particles, fine particles of inorganic fluorescent material and fine particle of inorganic luminescent material, are dispersed, co-precipitating said inorganic fine particle which forms a core into said organic material which forms a shell in said dispersion and forming shell of fine crystal of said organic material on the surface of the core of said inorganic fine particles of 50 nm or less by controlling the size of said inorganic fine particle and by controlling the adding amount of said organic material.

Abstract: The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.

Abstract: A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R) of at least 0.5 ?and at most 10 ?m. A ratio Ra(R)/Ra(C) of the surface roughness Ra(R) to the surface roughness Ra(C) is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Abstract: This invention provides nanocrystals or polymer doped nanocrystals of hydrophobic organic fluorescent dyes as stable dispersions in an aqueous system. The dispersions can be prepared without stabilizers such as surfactants and the like. The aqueous dispersions of the nanocrystals or the polymer doped nanocrystals can be used for bioimaging.

Abstract: The process for producing highly concentrated nanometer-size fine particles of an organic pigment, which comprises dissolving the organic pigment in an amide solvent, especially an organic solvent comprising at least 50 vol % 1-methyl-2-pyrrodinone, and pouring the resultant organic pigment solution with stirring into a poor solvent which is not compatible with the organic pigment. The pigment may be a quinacridone pigment, phthalocyanine pigment etc. Any atmospheric pressure to a sub-critical and/or supercritical state can be employed as the production conditions.

Abstract: A rewritable photomemory material obtained by combining a polymer possessing a carbonyl group in a main chain or a side chain with a function-imparting component such as a compound which produces rare earth ions is disclosed. The magnitude of fluorescence level of the rewritable phtomemory material can be intensified by light irradiation, while an initial state can be recovered by a heat treatment. Fine particle materials imparted with functions such as fluorescence characteristics, magnetic characteristics, coloration or non-linear characteristics are also disclosed, and particularly a fine particle material imparted with heat resistance through combination with polyimide is disclosed.

Abstract: A method for concentration of fine particles dispersed in a dispersion into an ionic liquid comprising, adding an ionic liquid, especially an organic ionic liquid at ordinary temperature, e.g., a salt of 1-butyl-3-methylimidazolium with PF6? to a dilute dispersion of fine particles so as to concentrate the fine particles into the ionic liquid.

Abstract: The process for producing highly concentrated nanometer-size fine particles of an organic pigment, which comprises dissolving the organic pigment in an amide solvent, especially an organic solvent comprising at least 50 vol % 1-methyl-2-pyrrodinone, and pouring the resultant organic pigment solution with stirring into a poor solvent which is not compatible with the organic pigment. The pigment may be a quinacridone pigment, phthalocyanine pigment etc. Any atmospheric pressure to a sub-critical and/or supercritical state can be employed as the production conditions.

Abstract: A method for preparation of porous polyimide microparticles comprising, forming polyamide acid microparticles by pouring polymer solution prepared by dissolving polyamide acid containing 0.5 to 80 weight % of alkali metal salt to polyamide acid by 0.1 to 15 weight % concentration into a poor solvent selected from the group consisting of aliphatic solvents, alicyclic solvents, aromatic solvents, CS2 and mixture of two or more these solvents and the temperature of which is adjusted to the range from ?20° C. to 60° C., wherein particle size of said polyamide acid microparticles is adjusted to 50 nm to 10000 nm by controlling the temperature of said poor solvent, pore size of said polyamide acid microparticles is adjusted to the range from 20 nm to 500 nm and porosity of said polyamide acid microparticles is adjusted to the range from 0.

Abstract: Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.

Abstract: The method for preparation quinacridone pigment nanocrystals with sub micrometer to nanometer in average size comprising, supplying supercritical or semi-critical liquid, which dissolves quinacridone pigment, into a specimen tube (ST) composing a reactor possessing a filter of desired opening to the upper stream side and to the down stream side in which quinacridone pigment is set up, flowing out the supercritical or semi-critical liquid in which quinacridone pigment is dissolved from said reactor to a mixing apparatus to which coolant is supplied, and by selecting the kind of supercritical of semi-critical liquid and combination of conditions e.g. supplying speed of each liquids, temperature of the liquid and the reacting pressure.

Abstract: GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained.

Abstract: GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained.

Abstract: A method of controlling the gear changing operation in an automatic transmission having a gear transmission actuatable by a gear changing actuator assembly controlled by an electronic control system. When operating the gear changing actuator assembly for a gear changing operation, an interval of time, which elapses after the gear changing actuator assembly is operated, is measured with a timer. The measured interval of time is compared with a preset interval of time. When a lock is detected as being caused at the time the gear changing operation is not completed within the preset interval of time, the gear changing actuator assembly is operated to a gear position different from a gear position which the gear changing actuator assembly has originally been operated to select.

Abstract: Herein disclosed is a method of processing a malfunction of an accelerator pedal sensor of an automobile. An output voltage is outputted according to changes in a resistance depending upon depression of an accelerator pedal. A malfunction of the accelerator pedal sensor is shot to process and determine an acceleration value for controlling the run of the automobile in accordance with said output voltage. The acceleration value is set at a predetermined value in accordance with the malfunction of either of an idle switch for generating a signal indicating the idle position of the accelerator pedal and a wide-open switch for generating a signal indicating the wide open position of the accelerator pedal when the malfunction of the accelerator pedal sensor is judged. This judgement is conducted by detecting a plurality of times that said output voltage is outside of the predetermined voltage range.

Abstract: A clutch target position control system of an engine includes a clutch actuator for controlling a clutch stroke, a sensor for detecting a parameter corresponding to an accelerator pedal depression amount, an engine revolution sensor for detecting a revolution speed of the engine and an input shaft revolution sensor for detecting a revolution speed of the input shaft. The disclosed system utilizes the steps of: reading clutch engagement amounts from map tables of registered data corresponding to each of the sensors, the detected signals from each sensor being converted into and used as address signals; calculating a total of three read clutch engagement amounts; and controlling the clutch actuator to control the actual clutch engagement amount on the basis of the calculated total amount.

Abstract: Herein disclosed is a signal processing system for a motor vehicle with high responsiveness to the will of a driver. The output voltage of an acceleration sensor using a potentiometer is converted into a digital value by an analog-digital converter. The nonlinearity of the output voltage is corrected by polynominally calculating the digital value. This digital value is controlled by a central processing unit which processes the digital value to generate an acceleration signal having a linear relationship to the changes in the resistance of the potentiometer during actuation of an accelerator. The central processing unit further includes a memory for storing the acceleration signal at an idling position to determine a calibrated acceleration signal using a ratio of an actual acceleration signal obtained from the accelerator pedal to the stored value thereof.