Abstract: Provided is a display unit that includes: a pair of a first substrate and a second substrate that are arranged in opposition to each other; a display layer provided between the first substrate and the second substrate; and a display mode switching layer having an aperture for each pixel, and provided between the display layer and the second substrate.

Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.

Abstract: There is provided a key input device including a supporting member including groove portions inclined with respect to a horizontal direction, a plurality of keytops each including a sliding portion which is fitted in a corresponding groove portion of the groove portions and slides along the groove portion, and a control member configured to cause two or more keytops of the plurality of keytops to slide obliquely downward along the groove portions.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization In a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Abstract: There is provided a display control device including a determination unit configured to determine a type of input information, and a display controller configured to switch modes of a display unit capable of being switched to a mirror surface mode and a display mode in accordance with a result of determination by the determination unit.

Abstract: There is provided a magnetic circuit including a first magnetic body configured to include a magnet and a yoke plate, and a second magnetic body. The yoke plate forms an opening space at a position facing the second magnetic body. The magnet is disposed in the opening space or at a position sandwiched between the yoke plates.

Abstract: A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Abstract: According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film.

Abstract: According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled phase including a first polymer portion and a second polymer portion by causing microphase separation of the block copolymer, removing the second polymer portion, and processing the to-be-processed film, with the physical guide and the first polymer portion serving as a mask. A pattern height of the first predetermined pattern is greater than a pattern height of the second predetermined pattern.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Abstract: A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease. The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Abstract: An image forming apparatus is provided that can surely position a unit in an apparatus body with a simple configuration where the number of components is small. A drawing apparatus, which draws a sheet feeding cassette as a unit to a predetermined position of the apparatus body to position it, includes : a leaf spring that is an elastic member to jump-buckle; an engaging unit disposed in the leaf spring; and an engaged unit engaged with the engaging unit. When the unit is loaded on the apparatus body, the engaging unit engages the engaged unit, the elastic member jump-buckles, and accordingly the unit is drawn to the predetermined position of the apparatus body.

Abstract: A wireless communication device in a data collection system starts measuring a time when the wireless communication device receives a wireless signal from a data collection device. The wireless communication device changes the wireless channel, transmits a detection signal for detecting the data collection device, and starts measuring a time after transmitting the detection signal when the wireless communication device is unable to receive a next wireless signal from the data collection device even after passage of a predetermined time since the wireless communication device has previously received the wireless signal. The wireless communication device changes the wireless channel to be used, depending on whether the wireless communication device has received a response signal from the data collection device in response to the detection signal within a predetermined time.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Abstract: A communication system includes a first terminal, a second terminal, and a third terminal. The first terminal transmits message data addressed to the third terminal to plural terminals. When the second terminal receives the message data and confirms that a destination thereof is not the second terminal, the second terminal transfers the received message data. When the third terminal receives the message data and confirms that the destination thereof is the third terminal, the third terminal transmits response data corresponding to the received message data to the first terminal. A priority for transmission of the response data is set higher than that of the transferred message data, and a period of time from reception of the message data until the transmission of the corresponding response data is shorter than a period of time from reception of the message data until the transfer of the message data.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.