Abstract: Disclosed is a serum albumin-thioredoxin fusion body which is improved in the activity thereof and is stable with respect to the activity. The serum albumin-thioredoxin fusion body is provided, which is characterized in that the thioredoxin is a modified from in which at least a cysteine residue located at position 73 from the N-terminal of an amino acid sequence for the thioredoxin or located at a position equivalent to the position 73 is substituted by another amino acid residue. the modified serum albumin-thioredoxin fusion body is superior in the activity and stability thereof, is reduced in immunogenicity and has superior safety compared with a fusion body in which the thioredoxin is non-modified form.

Abstract: A height of an upper surface of a control gate electrode is lower than a highest position of a lower surface of a silicide layer on a memory gate electrode adjacent to the control gate electrode via an ONO film. As a result, a structure in contact with the ONO film between the control gate electrode and the memory gate electrode is only the control gate electrode and the memory gate electrode made of polysilicon.

Abstract: A battery disclosed here includes: an electrode body; a battery case; a sealing plate; an electrode terminal having one end electrically connected to the electrode body inside the battery case and another end inserted in a terminal mounting hole and exposed to outside of the sealing plate; and a resin insulating member. The electrode terminal includes an externally connecting portion located outside the battery case and disposed at the outer surface of the sealing plate, an electrode body connecting portion, and a shaft portion inserted in the terminal mounting hole. The sealing plate has a rectangular shape in plan view, the externally connecting portion includes a body that is flat and rectangular in plan view, and a side surface of the body includes a tapered portion having a tapered shape or a round portion located at each end of the side surface and having a curved shape.

Abstract: A sealed battery includes: a battery case including an opening; a closing plate closing the opening; a collector terminal including an external connector exposed at an outer surface of the closing plate; a resin insulator insulating the closing plate from the external connector; a laser-welded region formed on a fitted portion between the battery case and the closing plate; and a shield. The shield includes: a first shield portion extending vertically or substantially vertically from the outer surface of the closing plate and located between the fitted portion and the insulator; and a second shield portion extending from the first shield portion to the insulator and covering a portion of a surface of the insulator.

Abstract: A sealed battery includes: a battery case including an opening; a closing plate closing the opening; a collector terminal including an external connector exposed at an outer surface of the closing plate; a resin insulator insulating the closing plate and the external connector from each other; a laser-welded region formed on a fitted portion between the battery case and the closing plate; and a shield disposed on the outer surface of the closing plate. The shield is interposed between the insulator and the fitted portion. The shield includes an inclined portion inclined toward the fitted portion. The inclined portion defines a side face of the shield adjacent to the fitted portion.

Abstract: Provided is a mask blank. A mask blank comprising a phase shift film on a transparent substrate, the phase shift film having a structure in which a first layer, a second layer, and a third layer are layered in this order on the transparent substrate, the first layer and the third layer including hafnium and oxygen, and the second layer including silicon and oxygen, wherein when thicknesses of the first layer, the second layer, and the third layer are represented by D1, D2, and D3, respectively, all relationships of (Expression 1-A) to (Expression 1-D) are satisfied, or all relationships of (Expression 2-A) to (Expression 2-D) are satisfied.

Abstract: A mask blank comprises: a light-transmissive substrate; and a phase shift film formed on the light-transmissive substrate, in which the phase shift film includes a lower layer containing hafnium and oxygen and an upper layer formed on the lower layer and containing silicon, oxygen, and nitrogen, a total content of hafnium and oxygen in the lower layer is 95 atom % or more, and a content of nitrogen in the upper layer is 15 atom % or more.

Abstract: The phase shift film has a function to transmit an exposure light of a KrF excimer laser at a transmittance of 2% or more, and a function to generate a phase difference of 150 degrees or more and 210 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film, in which the phase shift film has a structure where a lower layer and an upper layer are stacked in order from a side of the transparent substrate, in which a refractive index nL of the lower layer at a wavelength of the exposure light and a refractive index nU of the upper layer at a wavelength of the exposure light satisfy a relation of nL>nU, in which an extinction coefficient kL of the lower layer at a wavelength of the exposure light and an extinction coefficient kU of the upper layer at a wavelength of the exposure light satisfy a relation of kL>kU; and in which a thickness dL of the lower layer and a thicknes

Abstract: Gate patterns are formed on a semiconductor layer and a conductive film is formed on the semiconductor layer so as to cover the gate patterns. By performing a polishing process to the conductive film and patterning the polished conductive film, pad layers are formed between the gate patterns via sidewall spacers.

Abstract: A mask blank includes a substrate and a thin film formed on the substrate, the thin film including hafnium and oxygen. A total content of hafnium and oxygen of the thin film is 95 atom % or more. An oxygen content of the thin film is 60 atom % or more. An X-ray diffraction profile of a diffraction angle 2? between 25 degrees and 35 degrees has a maximum diffraction intensity in a diffraction angle 2? between 28 degrees and 29 degrees, the X-ray diffraction profile being obtained by an X-ray diffraction analysis with an Out-of-Plane measurement with respect to the thin film.

Abstract: A square type battery includes a cover that is provided with a terminal and is formed in a substantially rectangle, a case main body that is formed in a substantially rectangular parallelopiped and that includes two pairs of opposed side surfaces connected to a peripheral edge part of the cover, and an electrode body that is accommodated inside the case main body and that is connected to the terminal. At least a first side surface among the two pairs of opposed side surfaces is pinched toward an inward of the case main body. The first side surface and a second side surface opposed to the first side surface abut the electrode body.

Abstract: A mask blank has a structure where a thin film for pattern formation and a hard mask film are stacked in this order on a transparent substrate, featured in that the thin film is formed of a material containing chromium, the hard mask film includes a stacked structure of a lower layer and an upper layer, the lower layer is formed of a material containing silicon and oxygen, the upper layer is formed of a material containing tantalum and oxygen with an oxygen content of 30 atom % or more, and the ratio of a thickness of the upper layer relative to a total thickness of the hard mask film is 0.7 or less.

Abstract: An electricity storage device includes: an electrode body including at least one positive electrode plate, at least one negative electrode plate, and a separator. an insulating holder that is formed by folding a sheet made of an insulating material and accommodates therein the electrode body; an outer case which has an opening and accommodates therein the electrode body with the insulating holder and an electrolyte; and a sealing plate. The outer case has a bottom plate part and a plurality of side walls standing from the bottom plate part, and the opening is formed in a position to face the bottom plate part. The insulating holder has a plurality of side surface parts respectively facing the plurality of side walls, and a bottom surface part that faces the bottom plate part. At least one of the side surface parts or the bottom surface part has a bellow-folded structure.

Abstract: A terminal structure to be adopted for a power storage device including an outer case that has an opening, includes: a sealing plate sealing the opening; a terminal member inserted into a terminal hole formed in the sealing plate and electrically connected to an electrode; and a first insulating member arranged between the sealing plate and the terminal member, and arranged on an outer surface side of the sealing plate facing an outer side of the power storage device. The terminal member has a first extended part extending further outward than an outer periphery of the terminal hole on the outer side of the power storage device. A first protruding part or a second recessed part provided to the first insulating member and a first recessed part or a second protruding part provided to the sealing plate or to the first extended part fit with each other.

Abstract: Provided is a mask blank including a phase shift film. The mask blank includes a phase shift film on a main surface of a transparent substrate, the phase shift film contains silicon, oxygen, and nitrogen, a ratio of a nitrogen content [atom %] to a silicon content [atom %] in the phase shift film is 0.20 or more and 0.52 or less, a ratio of an oxygen content [atom %] to a silicon content [atom %] in the phase shift film is 1.16 or more and 1.70 or less, a refractive index n of the phase shift film to a wavelength of an exposure light of an ArF excimer laser is 1.7 or more and 2.0 or less, and an extinction coefficient k is 0.05 or less.

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.

Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Abstract: Provided is a mask blank that can manufacture a phase shift mask. Provided is a mask blank having a phase shift film on a transparent substrate, the phase shift film contains hafnium, silicon, and oxygen, a ratio of a hafnium content to a total content of hafnium and silicon in the phase shift film by atom % is 0.4 or more, a refractive index n of the phase shift film to a wavelength of an exposure light of an Arf excimer laser is 2.5 or more, and an extinction coefficient k of the phase shift film to a wavelength of the exposure light is 0.30 or less.

Abstract: A conductive member (61) is disposed near a side of the sealing plate (2) facing an electrode assembly with a first insulating member (10) disposed therebetween. The conductive member (61) has a conductive-member opening portion (61f) at a side thereof facing the electrode assembly. The conductive-member opening portion (61f) of the conductive member (61) is sealed by a deformation plate (62). The deformation plate (62) is connected to a first positive-electrode current collector (6a), which is electrically connected to positive electrode plates. The deformation plate (62) includes an annular rib (62b) that projects toward the electrode assembly at the outer peripheral edge thereof. The deformation plate (62) also includes an annular thin portion (62c) in a region inside the annular rib (62b).

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1<n2 and n2>n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.