Patents by Inventor Hitoshi Maeda

Hitoshi Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060131791
    Abstract: The present invention provides a method for producing a polyurethane foam molded article from a polyisocyanate compound, a polyol mixture containing polyol, a catalyst and a crosslinking agent, and a blowing agent, said method comprising continuously injecting the polyisocyanate compound, the polyol mixture and the blowing agent into a mold, using a molding machine capable of separately supplying the polyisocyanate compound, the polyol mixture and the blowing agent, while the timing of starting to inject the blowing agent is delayed after the start of injecting the polyisocyanate compound and the polyol mixture. The inventive method produces, in a single stage, a polyurethane foam molded article having the skin or high density portion selectively formed on portions of the molded article actually requiring them, where the proportions of the skin and the high density portion and the foamed core can be varied freely.
    Type: Application
    Filed: December 14, 2005
    Publication date: June 22, 2006
    Inventors: Masafumi Nakamura, Hiroshi Ikuta, Masaru Suzuki, Hitoshi Maeda
  • Publication number: 20060134398
    Abstract: A method of producing a polyurethane molded article is provided, in which one molding machine which can provide distinctly polyisocyanate component(s) and two kinds of polyol components is used, and prior to completion of the feed of a first polyurethane mixture liquid containing a polyisocyanate and a polyol component without a blowing agent into a mold, a second polyurethane mixture liquid containing a polyisocyanate and a second polyol component with a blowing agent is fed into the mold. The method produces, in a single stage, a polyurethane foam molded article having the skin or high density portion selectively formed on portions of the molded article actually requiring them, where the proportions of the skin and the high density portion and the foamed core can be varied freely.
    Type: Application
    Filed: December 14, 2005
    Publication date: June 22, 2006
    Inventors: Masafumi Nakamura, Masaru Suzuki, Hitoshi Maeda
  • Publication number: 20040150413
    Abstract: The present invention provides a cantilever which enables a further improvement of a surface resolution capability of a scanning capacity microscope (SCM) with regard to a cantilever employed for the SCM, as compared with a case of employing a conventional cantilever. As the cantilever applied to the SCM according to the present invention, that cantilever has a probe part 1 scanning a sample and an electrode part 2 supporting that probe part 1. Moreover, that probe part 1 includes an insulator 1a having a square pyramidal shape and a conductive wiring 1b placed only on one surface of that insulator 1a having the square pyramidal shape.
    Type: Application
    Filed: August 25, 2003
    Publication date: August 5, 2004
    Applicant: Renesas Technology Corp.
    Inventor: Hitoshi Maeda
  • Patent number: 6745618
    Abstract: A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample. Laser light (2) emitted therefrom should be of wavelength larger in value than a wavelength &lgr; calculated as follows: &lgr;=h·c/Eg where h is Planck's constant, c represents speed of light and Eg represents band gap. When the semiconductor as a sample is silicon, the band gap thereof is 1.12 eV, thus calculating the wavelength &lgr; at 1.107 &mgr;m. The laser diode (1a) should be such that the laser light (2) emitted therefrom is of wavelength larger in value than &lgr;. It is therefore allowed to avoid emission of light higher in energy level than the band gap of silicon as a sample and eventually, avoid generation of photoelectric current in the sample.
    Type: Grant
    Filed: July 12, 2002
    Date of Patent: June 8, 2004
    Assignee: Renesas Technology Corp.
    Inventors: Yukari Imai, Mari Tsugami, Hitoshi Maeda, Tohru Koyama
  • Publication number: 20030115939
    Abstract: A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample.
    Type: Application
    Filed: July 12, 2002
    Publication date: June 26, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yukari Imai, Mari Tsugami, Hitoshi Maeda, Tohru Koyama
  • Patent number: 6545470
    Abstract: It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9).
    Type: Grant
    Filed: April 1, 2002
    Date of Patent: April 8, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yukari Imai, Hitoshi Maeda, Mari Tsugami, Yoji Mashiko
  • Publication number: 20030057988
    Abstract: A semiconductor device inspecting method is provided which can detect electric faults in an in-line inspection. The positive electrode of a variable DC power supply (2) is connected to the back or a peripheral portion of a semiconductor substrate (4) and the negative electrode of the variable DC power supply (2) is connected to a conductive cantilever (3). A scan is performed with a given forward bias voltage (e.g. 1.0 V) applied between the cantilever (3) and the semiconductor substrate (4) and with the cantilever (3) in contact with a target contact plug (9). The current flowing through the cantilever (3) is then monitored with an ammeter (1) to obtain a current characteristic of each contact plug, making it possible to detect conduction faults which cannot be detected by simply observing the configuration.
    Type: Application
    Filed: June 4, 2002
    Publication date: March 27, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Hitoshi Maeda, Fumihito Ohta, Yukari Imai, Toshikazu Tsutsui
  • Publication number: 20030047810
    Abstract: An insulating film provided on an underlying layer (1) is selectively removed, thereby forming an insulating columnar body (4) standing on the underlying layer (1). A conductive film (7) is provided to cover the columnar body (4). Next, an interlayer insulating film (9) is provided to bury the columnar body (4) and the conductive film (7). The upper surface of the interlayer insulating film (9) is polished and planarized to the extent that the conductive film (7) is exposed. Thereafter an upper interconnect line (10) is provided. A lower interconnect line (8) and the upper interconnect line (10) are thereby connected through the conductive film (7).
    Type: Application
    Filed: June 17, 2002
    Publication date: March 13, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Hitoshi Maeda, Fumihito Ohta, Koji Fukumoto, Yoji Mashiko
  • Publication number: 20030025498
    Abstract: It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9) (FIG. 1).
    Type: Application
    Filed: April 1, 2002
    Publication date: February 6, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yukari Imai, Hitoshi Maeda, Mari Tsugami, Yoji Mashiko
  • Patent number: 6027949
    Abstract: A P-type silicon substrate (4) and an N-type diffusion layer region (6) are connected to aluminum electrodes (5 and 7), respectively. Respective sections of the P-type silicon substrate (4) and the N-type diffusion layer region (6) are exposed. The aluminum electrode (5) connected to the P-type silicon substrate (4) and a platinum electrode (1) are connected in common to a cathode of a DC power supply (3a) and the aluminum electrode (7) connected to the N-type diffusion layer region (6) is connected to an anode of the DC power supply (3a). A sample for evaluation is thus provided. Of this sample, the exposed sections of the P-type silicon substrate (4) and the N-type diffusion layer region (6) are dipped into a mixture (2) of hydrofluoric acid and alcohol, and a voltage not lower than a critical voltage is applied thereto by the DC power supply (3a). Thus, an evaluation of a form of a diffusion layer region in a semiconductor device is achieved with excellent reproducibility.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: February 22, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Hitoshi Maeda
  • Patent number: 5780870
    Abstract: A semiconductor device is provided for convenient checking of etching states of semiconductor layers, along with a process for its preparation, wherein a test layer is formed on the same wafer where a semiconductor product is manufactured, and concurrently with and under the same formation conditions as formation a target layer forming a part of the semiconductor product, wherein the test layer is formed on a first layer and on a second layer interposed between a portion of the test layer and the first layer, with one of the first and second layers having the same etching properties as the target layer and the other of the first and second layers having different etching characteristics from the target layer.
    Type: Grant
    Filed: September 30, 1996
    Date of Patent: July 14, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hitoshi Maeda, Yukinori Hirose, Yuichi Yokoyama
  • Patent number: 5346137
    Abstract: An electromagnetic fuel injection valve comprises a valve body, a valve seat which cooperates with the valve body, a fuel injection port disposed downstream of the valve seat, and a dividing device which serves to divide injection fuel injected from the fuel injection port. The dividing device is formed integrally with a member in which the fuel injection port is formed and includes parallel walls substantially parallel to each other with the fuel injection port interposed therebetween and arcuate walls connected to the parallel walls having a diameter larger than that of the fuel injection port. The walls extend from said member in a direction of an axis of the valve. The dividing device has an outer diameter substantially equal to the largest diameter of the valve seat.
    Type: Grant
    Filed: January 28, 1993
    Date of Patent: September 13, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Yoshio Okamoto, Hisanobu Kanamaru, Hitoshi Maeda, Satoshi Suzuki, Tohru Ishikawa, Tokuo Kosuge, Kiyoshi Amou, Hiroshi Ohki, Koji Nakagawa, Yoshiyuki Tanabe, Mizuho Yokoyama