Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

Abstract: A substrate processing apparatus processes a substrate having an upper side and a rear side. The substrate processing apparatus includes a substrate holder, a filler feeder, and a first cleaning liquid feeder. The substrate holder rotates the substrate while holding a central portion of the rear side of the substrate. The filler feeder feeds filler to the upper side of the substrate held by the substrate holder. The first cleaning liquid feeder feeds a cleaning liquid to the rear side of the substrate held by the substrate holder. The first cleaning liquid feeder feeds the cleaning liquid to an area, held by the substrate holder, of the rear side of the substrate.

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.

Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.

Abstract: A substrate processing method includes an intermediate processing step of processing the pattern forming surface by the intermediate processing liquid after a chemical liquid processing step, a filler discharging step of discharging a filler after the intermediate processing step, a filler spreading step of spreading the filler, a solidified film forming step of solidifying the filler, a lower position disposing step of making a blocking member be disposed at a lower position prior to start of the chemical liquid processing step, and a blocking member elevating step of starting elevation of the blocking member toward an upper position in a state where the pattern forming surface is covered with the intermediate processing liquid. The chemical liquid is discharged from a central nozzle. Spreading of the filler is started in a state where the blocking member is positioned at the upper position.

Abstract: A filler solution is supplied to an upper surface of a substrate, forming a coating that is a film of the filler solution. Clearance in the structure on the upper surface of the substrate is filled with the filler solution. Then, a stripping solution is applied to a peripheral region of the upper surface of the substrate, to strip off a portion of the coating formed on the peripheral region. Also, a gas is injected toward a boundary portion between the peripheral region and an inner region of the upper surface of the substrate, to accelerate solidification of an outer edge portion of the coating formed on the inner region, to suppress the spread of the coating from the inner region to the peripheral region. A substrate holder/rotator, fluid supplies, and a gas injection part are provided to carry out the above process.

Abstract: Pure water, a mixed solution, and an organic solvent are applied to a substrate in this order. The organic solvent is then removed by rotation. The mixed solution is a mixture of pure water and the organic solvent, and has a surface tension lower than that of the pure water. Since the mixed solution has a solubility in pure water, which is higher than that of the organic solvent, local drying on the upper surface becomes less likely at an interface between the mixed solution and the pure water, which suppresses collapse of pattern elements. Since the temperature of the substrate is raised by the mixed solution having a temperature higher than room temperature, it is possible to reduce the time required for a process related to drying.

Abstract: A substrate processing method includes an intermediate processing step of processing the pattern forming surface by the intermediate processing liquid after a chemical liquid processing step, a filler discharging step of discharging a filler after the intermediate processing step, a filler spreading step of spreading the filler, a solidified film forming step of solidifying the filler, a lower position disposing step of making a blocking member be disposed at a lower position prior to start of the chemical liquid processing step, and a blocking member elevating step of starting elevation of the blocking member toward an upper position in a state where the pattern forming surface is covered with the intermediate processing liquid. The chemical liquid is discharged from a central nozzle. Spreading of the filler is started in a state where the blocking member is positioned at the upper position.

Abstract: In a substrate processing apparatus, a cup part is moved in an up-down direction to cause a cup exhaust port to selectively overlap a first chamber exhaust port or a second chamber exhaust port. In the state in which the cup exhaust port overlaps the first chamber exhaust port, gas in the cup part is discharged through the cup exhaust port and the first chamber exhaust port by a first exhaust mechanism. In the state in which the cup exhaust port overlaps the second chamber exhaust port, the gas in the cup part is discharged through the cup exhaust port and the second chamber exhaust port by a second exhaust mechanism. In this way, an exhaust mechanism for exhausting gas from the cup part can be easily switched between the first exhaust mechanism and the second exhaust mechanism.

Abstract: A substrate processing apparatus includes a chamber, a substrate holding part, a substrate rotating mechanism, and a processing liquid supply part. The chamber includes a chamber body and a chamber cover, and the chamber cover is moved up and down by a chamber opening and closing mechanism. A top plate is attached to the chamber cover. While the chamber cover is in contact with the chamber body, a sealed space is formed and processing is performed. When the chamber cover is moved up, an annular opening is formed between the chamber cover and the chamber body. A cup part is positioned outside the annular opening. A processing liquid spattering from a substrate is received by the cup part.

Abstract: A substrate processing apparatus includes a chamber, a substrate holding part, a substrate rotating mechanism, and a processing liquid supply part. The chamber includes a chamber body and a chamber cover, and the chamber cover is moved up and down by a chamber opening and closing mechanism. A top plate is attached to the chamber cover. While the chamber cover is in contact with the chamber body, a sealed space is formed and processing is performed. When the chamber cover is moved up, an annular opening is formed between the chamber cover and the chamber body. A cup part is positioned outside the annular opening. A processing liquid spattering from a substrate is received by the cup part.

Abstract: A substrate processing apparatus includes a chamber, a substrate holding part, a substrate rotating mechanism, and a processing liquid supply part. The chamber includes a chamber body and a chamber cover, and the chamber cover is moved up and down by a chamber opening and closing mechanism. A top plate is attached to the chamber cover. While the chamber cover is in contact with the chamber body, a sealed space is formed and processing is performed. When the chamber cover is moved up, an annular opening is formed between the chamber cover and the chamber body. A cup part is positioned outside the annular opening. A processing liquid spattering from a substrate is received by the cup part.

Abstract: A substrate processing method includes a substrate holding step of horizontally holding a substrate having a first major surface and a second major surface at an opposite side of the first major surface, a coating film forming step of supplying a coating agent to the first major surface to form a sublimating coating film which covers the first major surface, and a coating film cleaning step of cleaning a front surface of the coating film.

Abstract: A substrate processing apparatus processes a substrate having an upper side and a rear side. The substrate processing apparatus includes a substrate holder, a filler feeder, and a first cleaning liquid feeder. The substrate holder rotates the substrate while holding a central portion of the rear side of the substrate. The filler feeder feeds filler to the upper side of the substrate held by the substrate holder. The first cleaning liquid feeder feeds a cleaning liquid to the rear side of the substrate held by the substrate holder. The first cleaning liquid feeder feeds the cleaning liquid to an area, held by the substrate holder, of the rear side of the substrate.

Abstract: A filler solution is supplied to an upper surface of a substrate, forming a coating that is a film of the filler solution. Clearance in the structure on the upper surface of the substrate is filled with the filler solution. Then, a stripping solution is applied to a peripheral region of the upper surface of the substrate, to strip off a portion of the coating formed on the peripheral region. Also, a gas is injected toward a boundary portion between the peripheral region and an inner region of the upper surface of the substrate, to accelerate solidification of an outer edge portion of the coating formed on the inner region, to suppress the spread of the coating from the inner region to the peripheral region. A substrate holder/rotator, fluid supplies, and a gas injection part are provided to carry out the above process.

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.

Abstract: A substrate processing method includes a substrate holding step of horizontally holding a substrate having a first major surface and a second major surface at an opposite side of the first major surface, a coating film forming step of supplying a coating agent to the first major surface to form a sublimating coating film which covers the first major surface, and a coating film cleaning step of cleaning a front surface of the coating film.

Abstract: Pure water, a mixed solution, and an organic solvent are applied to a substrate in this order. The organic solvent is then removed by rotation. The mixed solution is a mixture of pure water and the organic solvent, and has a surface tension lower than that of the pure water. Since the mixed solution has a solubility in pure water, which is higher than that of the organic solvent, local drying on the upper surface becomes less likely at an interface between the mixed solution and the pure water, which suppresses collapse of pattern elements. Since the temperature of the substrate is raised by the mixed solution having a temperature higher than room temperature, it is possible to reduce the time required for a process related to drying.