Abstract: A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of the n-cladding layer, the optical guide layer, and the p-cladding layer has a layer constituted with elements identical with those of the Be-containing group II-VI compound semiconductor mixed crystals of the active layer, and the layer is constituted with a superlattice structure comprising, as a well layer, mixed crystals of a Be compositions with the fluctuation of the composition being within ±30% compared with the Be composition of the group II-VI compound semiconductor mixed crystals of the active layer, whereby the device characteristics of the semiconductor laser comprising the Be-containing group II-VI compound semiconductor matched with the InP substrate.

Abstract: An image forming apparatus having a liquid-cooled cooling system prevents problems caused by a potential leakage of coolant used in the liquid-cooled cooling system. The liquid-cooled cooling system cools a heat-generating image forming portion using the coolant, which is circulated by a pump through a circulating path. The cooling system includes a heat-receiving member disposed in thermal contact with the image forming portion to absorb heat generated by the image forming portion. The heat-receiving member is connected with the circulating path via a joint. The joint is disposed within an enclosed space between the image forming portion and an electrical component drive portion for driving or controlling the image forming portion, so that the image forming portion and the electrical component drive portion can be protected from the coolant in the event of coolant leakage via the joint.

Abstract: A receiver includes: a band detection unit that detects a frequency band within which the receiver can be connected to a transmitter by radio; a quality detection unit that detects the transmission quality level of video data, which is transmitted from the transmitter, using the frequency band detected by the band detection unit; and a notification unit that notifies an area in which the frequency band within which the receiver can be connected to the transmitter by radio is detected and the transmission quality level is detected to be higher than a predetermined threshold.

Abstract: A spent fuel reprocessing method has a dissolution step of dissolving the spent fuel in nitric acid solution, an electrolysis/valence adjustment step of reducing Pu to trivalent, maintaining the pentavalent of Np, a uranium extraction step of collecting UO2 by bringing the fuel into contact with organic solvent and extracting hexavalent U by means of an extraction agent, an oxalic acid precipitation step of causing MA and the fissure products remaining in the nitric acid solution to precipitate together as oxalic acid precipitate, a chlorination step of converting the oxalic acid precipitate into chlorides by adding hydrochloric acid to the oxalic acid precipitate, a dehydration step of synthetically producing anhydrous chlorides by dehydrating the chlorides in a flow of Ar gas, and a molten salt electrolysis step of dissolving the anhydrous chlorides into molten salt and collecting U, Pu and MA at the cathode by electrolysis.

Abstract: To provide electric double layer capacitors which have large electrostatic capacitances. Graphite with a BET surface area of from 10 to 300 m2/g, wherein the graphite has an energy storing ability of 10 to 200 mAh at a voltage of 1 V or more based on the oxidation-reduction potential of lithium.

Abstract: A refill for a correction pen is constructed of a molded article of a polyamide resin obtained from monomers having an aromatic ring or a naphthene ring, a molded article of a blend of two or more kinds of polyamide resins, or a molded article having a multi-layered structure of two or more layers whose innermost layer in contact with the correction fluid is constituted of a polyamide resin. The applying part of a refill unit mounted on a ballpoint type applicator having a pressurizing mechanism in linkage with clicking action is formed by press fitting the rear end of a ballpoint pen tip having a rotatable ball to the attachment portion at the front end of an ink reservoir and a metal tube is squeezed to cover the outer periphery of the attachment portion at the front end of the ink reservoir to which the tip is fitted.

Abstract: An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.

Abstract: A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units.

Abstract: There is disclosed a Be-containing II-VI group semiconductor laser that has a laminated structure formed on an InP substrate to continuously emit at room temperature without crystal degradation. A basic structure of the semiconductor laser is formed over the InP substrate by use of a lattice-matched II-VI group semiconductor including Be. An active layer and cladding layers are formed to be a double heterostructure with a type I band lineup, in order to increase the efficiency for injecting carriers into the active layer. The active layer and the cladding layers are also formed to enhance the light confinement to the active layer, in which the Mg composition of the p-type cladding layer is set to Mg<0.2.

Abstract: The present invention provides an adapter device adapted for easier operation of a lid that opens and closes an opening through which a video camera is to be inserted and on which a viewfinder is to be installed. The present invention provides an adapter device to which a video camera device is to be attached, the adapter device including an adapter body having formed therein a receptacle in which the video camera device is to be installed and having formed at the rear end thereof an opening through which the video camera device is to be inserted first at a lens-unit mount thereof, a lid provided pivotably on a vertical pivot of the adapter body to open and close the insertion opening, and a mount base provided on the top of the lid on which a viewfinder is to be installed.

Abstract: The present invention provides a positive electrode for electric double layer capacitors which can improve basic characteristics, such as energy density, of electric double layer capacitors and also can improve electric double layer capacitors in useful life and stability under high temperatures. Provided is a positive electrode for electric double layer capacitors comprising as electrode active materials a carbonaceous material having a ratio of rhombohedral crystal structure to hexagonal crystal structure in crystal structure of carbon within the range of not less than 20%.

Abstract: To provide a long-life refractory capable of maintaining durability under severe conditions. The castable refractory comprises a mixture containing at least one of 2 to 10 mass % of silicon carbide and 3 to 10 mass % of chamotte, as an auxiliary raw material, and a binder material, with the remaining balance being one or more main raw materials selected from corundum, mullite, bauxite, chamotte, talc and silica, and is used in an environment exposed to an alkali component-containing hot gas atmosphere. In an alkali component-containing gas atmosphere at a high temperature (750° C. or more), silicon carbide and/or chamotte are vitrified to a thickness of 1 mm or less in the surface layer of the refractory to prevent the alkali component-containing gas from intruding inside of the refractory.

Abstract: An adapter device is disclosed to which a video camera can easily be attached. The adapter is compatible with both small and large camera lenses which may be attached directly to it. The adapter includes a receptacle which enables the video camera to be located within the adapter after being inserted through a rear opening. Once inserted, the adapter includes both mechanical and electrical connections to enable the camera to be connected to the adapter. A key mechanical connection is located at the front end of the adapter and it interfaces with a lens-unit mount of the camera. The electrical connection is located on the bottom inner surface of the adaptor and the connection interfaces with a terminal block on the video camera.

Abstract: A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units.

Abstract: An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

Abstract: A method and apparatus for aligning a swing tail cargo door. An alignment system comprises an alignment ramp, a set of pull-in hook mechanisms, and a set of lock trains. The alignment ramp may be configured for initial alignment between a swing tail cargo door and an aircraft fuselage during closing of the swing tail cargo door. The set of pull-in hook mechanisms may be disposed along an interface between the swing tail cargo door and the aircraft fuselage and may be capable of a final alignment between the swing tail cargo door and the aircraft fuselage during the closing of the swing tail cargo door. The set of lock trains may be disposed along the interface and may be capable of locking a plurality of latch actuators in the latched position.

Abstract: The present invention provides an adapter device to which a small video camera can easily be attached.

Abstract: A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0<x1<1, 0<x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including Bex4Mgx5Znx6Te (0<x4<1, 0<x5<1, 0<x6<1, x4+x5+x6=1).

Abstract: A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element.

Abstract: A paper multi-feed detection apparatus and a paper multi-feed detection method are provided for preventing the detection capability from being deteriorated by a noise factor and improving the detection precision even where an area around the feeding path has no extra space in terms of the shape and there are many noise-generating factors because of a demand for a smaller size of the device. An ultrasonic transmission opening formed in one of two feeding guide plates is large so as to discharge outside a reflected wave which returns through the ultrasonic transmission opening, and an ultrasonic receiving opening formed in the other feeding guide plate is smaller than a receiving face area of a receiver for receiving the ultrasonic wave.