Abstract: A laminate substrate which includes a single crystal diamond (111) layer, including: an underlying substrate, an intermediate layer on the underlying substrate, and the single crystal diamond (111) layer on the intermediate layer, in which the underlying substrate has a main surface which has an off angle within a range, ?8.0° or more and ?0.5° or less, or +0.5° or more and +8.0° or less in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111), and the single crystal diamond (111) layer has an off angle within a range, more than ?10.5° and less than ?2.0°, or more than +2.0° and less than +10.5° in the crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to the crystal plane orientation of (111).

Abstract: A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner.

Abstract: A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. Performed is a first step of disposing a laser condensing means on a surface of a magnesium oxide single crystal substrate (20) of magnesium oxide to be irradiated in a non-contact manner, the laser condensing means being for condensing a laser beam. Then, a second step of causing planar peeling from a surface side of the magnesium oxide single crystal substrate (20) to be irradiated is performed. In this second step, a laser beam (B) is irradiated to the surface of the single crystal substrate (20) and the laser beam (B) is condensed into an inner portion of the single crystal substrate (20) under designated irradiation conditions. Simultaneously with the irradiation and the condensation, the laser condensing means (14) and the single crystal substrate (20) are two-dimensionally moved relatively to each other.

Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Abstract: A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surface 20r of a magnesium oxide single crystal substrate 20 to be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrate 20 and condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substrate 20 relatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.

Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

Abstract: A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Abstract: It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

Abstract: A control apparatus for an internal combustion engine is provided which works to control an electric motor to start the engine through a belt transmission system. The control apparatus restricts rotation of the electric motor so as to keep a speed of the electric motor below a speed at which the electric motor is capable of producing a maximum torque until a given period of time passes since the electric motor is actuated to start in the motor mode. This enables the electric motor to generate the maximum torque when it is required to crank the engine.

Abstract: A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10?6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.

Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Abstract: Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

Abstract: Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

Abstract: A power transmission system transmits power from an internal combustion engine to a first and a second auxiliary device through an endless transmitting member. Prior to issuing of an engine start request, the first auxiliary device is actuated to move a tensioner pulley to a given position to increase the degree of tension of the endless transmitting member. The actuation of the first auxiliary device as an engine starter upon the issuing of the engine start request, therefore, enables a drive shaft of the engine to be rotated immediately within a required time to crank the engine. This achieves a quick start of the engine and results in a decrease in amount of time between the issuing of the engine start request and the actual start of the engine.

Abstract: A control apparatus for an internal combustion engine is provided which works to control an electric motor to start the engine through a belt transmission system. The control apparatus restricts rotation of the electric motor so as to keep a speed of the electric motor below a speed at which the electric motor is capable of producing a maximum torque until a given period of time passes since the electric motor is actuated to start in the motor mode. This enables the electric motor to generate the maximum torque when it is required to crank the engine.

Abstract: The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (?-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

Abstract: A power transmission system transmits power from a drive shaft of an internal combustion engine to a first and a second auxiliary device through a belt. An auto-tensioner extends or contracts to change the tension of the belt. A controller rotates the first auxiliary device in a reverse direction to loosen the belt to cause the auto-tensioner to extend to increase the tension of the belt and calculates a reversing timing when the drive shaft will be reversed as a result of increasing of the tension of the belt. The controller inhibits the tensioner body from contracting immediately before or when the reversing time is reached to keep the tension of the belt at an increased degree, thereby eliminating the slippage of the belt on each pulley without having to finely control the operation of the first auxiliary device when the internal combustion engine is started.

Abstract: A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.