Abstract: A substrate treatment method includes: overlaying a film on a surface of a substrate which includes a first region including a metal atom in a surface layer thereof, using a directed self-assembling material which contains a compound having no less than 6 carbon atoms and including at least one cyano group. After the overlaying, the film on a region other than the first region is removed. After the removing, a pattern principally containing a metal oxide is formed by an Atomic Layer Deposition process or a Chemical Vapor Deposition process on the region other than the first region, of the surface of the substrate.

Abstract: A composition includes two types of polymers each having a different weight average molecular weight. The two types of polymers are each a styrene polymer having a group which bonds to at least one end of a main chain and which includes at least one of a hydroxy group, a carboxy group, a sulfanyl group, an epoxy group, a cyano group, a vinyl group or a carbonyl group. A difference in weight average molecular weight between the two types of polymers is no less than 2,000 and no greater than 30,000.

Abstract: A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.

Abstract: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.

Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including a metal. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the metal. It is preferred that the base material further includes a second region comprising substantially only a non-metal, and the method further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film. The metal is preferably a constituent of a metal substance, an alloy, an oxide, an electrically conductive nitride or a silicide.

Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

Abstract: A composition includes a first polymer and a solvent. The first polymer includes a first structural unit including a fluorine atom, and a group including a first functional group at an end of a main chain or a side chain of the first polymer. The first functional group is capable of forming a bond with a metal or a metalloid. The first structural unit preferably includes a fluorinated hydrocarbon group. The first structural unit is preferably derived from a (meth)acrylic ester containing a fluorine atom, or a styrene compound containing a fluorine atom. The first structural unit preferably contains 6 or more fluorine atoms.

Abstract: A composition for pattern formation includes a first polymer, a second polymer and a solvent. The first polymer includes: a first block including a first structural unit derived from a substituted or unsubstituted styrene; and a second block including a second structural unit other than the first structural unit. The second polymer includes: the first structural unit; and a group bonding to at least one end of a main chain thereof and including a polar group. The polar group is preferably a hydroxy group or a carboxyl group. A number average molecular weight of the second polymer is preferably no greater than 6,000. A mass ratio of the second polymer to the first polymer is preferably no less than 0.15 and no greater than 0.4. The solvent preferably comprises a compound comprising a hydroxyl group and an alkyl ester group.

Abstract: A composition includes two types of polymers each having a different weight average molecular weight. The two types of polymers are each a styrene polymer having a group which bonds to at least one end of a main chain and which includes at least one of a hydroxy group, a carboxy group, a sulfanyl group, an epoxy group, a cyano group, a vinyl group or a carbonyl group. A difference in weight average molecular weight between the two types of polymers is no less than 2,000 and no greater than 30,000.

Abstract: A pattern-forming method includes forming a base pattern including a first polymer on a front face side. A composition is applied on at least a lateral face of the base pattern. The composition includes at least one polymer that is capable of interacting with the first polymer. The composition is heated such that a portion of the at least one polymer interacts with the first polymer and that a coating film is formed on the lateral face of the base pattern. Another portion of the at least one polymer not having interacted with the first polymer is removed to form a resist pattern. The base pattern in a planar view has a shape with a long axis and a short axis, and a ratio of lengths of the long axis to the short axis is no less than 1.5 and no greater than 10.

Abstract: A contact hole pattern-forming method includes forming a hole pattern on a front face side of a substrate, directly or via other layer. A first composition including a first polymer is applied circularly in a planar view so as to coat lateral faces of holes of the hole pattern. A resin layer is provided on the front face side of the substrate and inside the lateral faces of the holes from a second composition including a second polymer. The resin layer is heated. A part of the resin layer heated is removed. The substrate is etched using a resist pattern formed. The first polymer includes a group being bound to at least one end of a main chain of the first polymer, and being capable of interacting with a third polymer constituting the hole pattern. The second polymer is a homopolymer or a random copolymer.

Abstract: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate. A first composition is applied on lateral faces of the recessed portions of the base pattern, to form a coating. The first composition includes a first polymer which includes on at least one end of a main chain thereof a group capable of interacting with the base pattern. A surface of the coating is contacted with a highly polar solvent. The recessed portions are filled with a second composition. The second composition includes a second polymer which is capable of forming a phase separation structure through directed self-assembly. Phase separation is permitted in the second composition to form phases. A part of the phases is removed to form a miniaturized pattern. The substrate is etched directly or indirectly using the miniaturized pattern as a mask.

Abstract: A pattern-forming method includes forming a base pattern including a first polymer on a front face side. A composition is applied on at least a lateral face of the base pattern. The composition includes at least one polymer that is capable of interacting with the first polymer. The composition is heated such that a portion of the at least one polymer interacts with the first polymer and that a coating film is formed on the lateral face of the base pattern. Another portion of the at least one polymer not having interacted with the first polymer is removed to form a resist pattern. The base pattern in a planar view has a shape with a long axis and a short axis, and a ratio of lengths of the long axis to the short axis is no less than 1.5 and no greater than 10.

Abstract: A pattern-forming method enables a resist pattern having a favorable shape with a desired size to be conveniently formed while generation of defects is inhibited, and by using such a superior resist pattern as a mask, a pattern having a favorable shape and arrangement can be formed. The pattern-forming method including: overlaying a base pattern on a front face side of a substrate directly or via other layer; applying a first composition on at least a lateral face of the base pattern; forming a polymer layer by graft polymerization on a surface of the coating film formed after the applying; and etching the substrate by one or a plurality of etching operations by using a resist pattern that includes the base pattern, the coating film and the polymer layer.

Abstract: A resist pattern-forming method includes forming a resist film using a photoresist composition. The resist film is exposed. The exposed resist film is developed. The photoresist composition includes an acid generator and a polymer. The acid generator generates a protonic acid upon application of exposure light. The protonic acid generates a proton. The polymer includes a first structural unit which includes a first group. The first group and the proton form a cationic group. The polymer substantially does not include a structural unit which includes an acid-labile group.

Abstract: A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a fluorine-containing polymer having a structural unit (I) that includes a group represented by the following formula (1), and (B) a radiation-sensitive acid generator.

Abstract: A radiation-sensitive resin composition includes (A) a block copolymer, and (B) an acid-generating agent. The block copolymer (A) includes a polymer block (I), a polymer block (II), and a moiety contained in the polymer block (I), the polymer block (2), or both thereof. The polymer block (I) includes an acid-dissociable group. The polymer block (II) includes an alkali-dissociable group. The moiety provides water repellency.

Abstract: A resist pattern-forming method includes forming a resist film using a photoresist composition. The resist film is exposed. The exposed resist film is developed. The photoresist composition includes an acid generator and a polymer. The acid generator generates a protonic acid upon application of exposure light. The protonic acid generates a proton. The polymer includes a first structural unit which includes a first group. The first group and the proton form a cationic group. The polymer substantially does not include a structural unit which includes an acid-labile group.

Abstract: A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a fluorine-containing polymer having a structural unit (I) that includes a group represented by the following formula (1), and (B) a radiation-sensitive acid generator.