Patents by Inventor Hitoshi Sato

Hitoshi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8956896
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: February 17, 2015
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20150004290
    Abstract: Provided is a production method for a purified tea extract having improved solubility of the non-polymer catechins in a solvent. The production method for a purified tea extract according to the present invention comprises bringing a tea extract into contact with a magnesium-type or lithium-type cation exchange resin.
    Type: Application
    Filed: December 12, 2012
    Publication date: January 1, 2015
    Inventors: Kenichi Shikata, Hideo Ohminami, Hitoshi Sato
  • Patent number: 8891054
    Abstract: A stage device includes a base and a stage movable portion that is movable along a surface of the base. An interferometer measures a position of the stage movable portion using measurement light. At least one of a piping element and a wiring element are connected to the stage movable portion. An auxiliary member, including a plurality of members connected with each other along an axial direction of the piping element, guides a bend of the at least one of the piping element and the wiring element. A plurality of heat insulating sheets are supported by the plurality of members of the auxiliary member. The plurality of heat insulating sheets are provided between a space through which the measurement light of the interferometer passes, and the at least one of the piping element and the wiring element.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: November 18, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hitoshi Sato, Yasuhito Sasaki, Keiji Emoto
  • Publication number: 20140330468
    Abstract: A vehicle is capable of supplying electric power to an electric load external to the vehicle. The vehicle includes an electric-power generation device generating the electric power, a first connection terminal for electrically connecting the vehicle to another first vehicle to output the electric power generated by the electric-power generation device via the other first vehicle to the electric load, a second connection terminal for connecting another second vehicle to the vehicle to electrically connect the other second vehicle with the vehicle in parallel with respect to the electric load, and a system controller operating the electric-power generation device based on an electric power command received from the other first vehicle.
    Type: Application
    Filed: July 17, 2014
    Publication date: November 6, 2014
    Inventors: Hichirosai OYOBE, Tetsuhiro ISHIKAWA, Yukihiro MINEZAWA, Hitoshi SATO
  • Publication number: 20140191244
    Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
    Type: Application
    Filed: March 12, 2014
    Publication date: July 10, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: John F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20140183579
    Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
    Type: Application
    Filed: January 2, 2013
    Publication date: July 3, 2014
    Applicants: Japan Science and Technology Agency, The Regents of the University of California
    Inventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8762115
    Abstract: A nuclear reactor fueling plan evaluating system and method in which reactor shutdown margin evaluation are performed quickly and accurately. A fueling procedure formulating part and an input setting part having databases are included. A maximum worth control rod candidate selecting part having a control rod worth calculating means inputs fuel loading and control rod patterns of each fueling act, inputs a relatively simple second physics model, calculates control rod worth from the difference between the degree of subcriticality of a reactor core in a state that all control rods are inserted and the degree of subcriticality of the reactor core in a state that a single control rod is withdrawn for each fueling step, and selects a determined number of maximum worth control rod candidates. A reactor shutdown margin calculating part inputs a subdivided first physics model and calculates reactor shutdown margin for each maximum worth control rod candidate.
    Type: Grant
    Filed: October 27, 2009
    Date of Patent: June 24, 2014
    Assignee: Global Nuclear Fuel—Japan Co., Ltd
    Inventors: Teppei Yamana, Masayuki Tojo, Hitoshi Sato, Tatsuya Iwamoto
  • Publication number: 20140135391
    Abstract: Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B.
    Type: Application
    Filed: June 21, 2012
    Publication date: May 15, 2014
    Applicant: KAO CORPORATION
    Inventors: Kenji Yamawaki, Yukiteru Sugiyama, Hitoshi Sato
  • Patent number: 8709925
    Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: April 29, 2014
    Assignee: The Regents of the University of California
    Inventors: John F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8651002
    Abstract: A sheet cutter includes: a stationary knife including a straight blade part formed in a straight-line shape in a longitudinal direction; a movable knife including a cutting edge part formed in the shape of V-character, opposed to mesh with the straight blade part of the stationary knife, the movable knife being able to freely move toward or back from the stationary knife; a movable knife pressing member for pressing the movable knife against the stationary knife; and a movable knife driver driving the movable knife forward or backward. The movable knife pressing member pressure contacts the movable knife against the stationary knife by a compression coil spring contained inside the movable knife pressing member.
    Type: Grant
    Filed: September 10, 2007
    Date of Patent: February 18, 2014
    Assignee: Nippon Primex Inc.
    Inventor: Hitoshi Sato
  • Patent number: 8592802
    Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0<x<1 and 0?y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: November 26, 2013
    Assignee: The Regents of the University of California
    Inventors: Michael Iza, Hitoshi Sato, Eu Jin Hwang, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20130273220
    Abstract: Provided is a production method for a purified tea extract, which enables efficiently removing gallic acid and collecting the non-polymer catechins in a high yield without impairing original taste and flavor of tea. The production method for a purified tea extract according to the present invention comprises bringing a tea extract into contact with an OH-type anion exchange resin and an H-type cation exchange resin.
    Type: Application
    Filed: December 28, 2011
    Publication date: October 17, 2013
    Applicant: KAO Corporation
    Inventors: Takuma Ito, Kenichi Shikata, Hitoshi Sato, Eizo Maruyama
  • Publication number: 20130168833
    Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
    Type: Application
    Filed: February 25, 2013
    Publication date: July 4, 2013
    Inventors: Hitoshi Sato, John F. Kaeding, Michael Iza, Benjamin A. Haskell, Troy J. Baker, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8405128
    Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: March 26, 2013
    Assignee: The Regents of the University of California
    Inventors: Hitoshi Sato, John F. Kaeding, Michael Iza, Benjamin A. Haskell, Troy J. Baker, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8368109
    Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: February 5, 2013
    Assignee: The Regents of the University of California
    Inventors: Kenji Iso, Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8368179
    Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: February 5, 2013
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20130015492
    Abstract: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
    Type: Application
    Filed: September 6, 2012
    Publication date: January 17, 2013
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Tadao Hashimoto, Hitoshi Sato, Shuji Nakamura
  • Patent number: 8299452
    Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: October 30, 2012
    Assignee: The Regents of the University of California
    Inventors: Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20120244255
    Abstract: Provided is a method for producing a purified tea extract, which can satisfy both the yield of the non-polymer catechins and the removal rate of gallic acid at high levels. The method is characterized in that a tea extract, which contains an aqueous solution of an organic solvent, brought into contact with an anion exchange resin.
    Type: Application
    Filed: December 8, 2010
    Publication date: September 27, 2012
    Applicant: KAO CORPORATION
    Inventors: Kenichi Shikata, Hitoshi Sato
  • Patent number: D716368
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: October 28, 2014
    Assignee: Roland Corporation
    Inventors: Tetsuya Uesugi, Hitoshi Sato