Abstract: A lithography apparatus includes a generating unit configured, by receiving character information which specifies a shape of an identification figure representing identification information of a target object, to generate pattern writing data of the identification figure on the basis of the character information; a synthesizing unit configured, by receiving a pattern writing data of a pattern written on the target object, to synthesize the pattern writing data of the pattern and the pattern writing data of the identification figure; and a pattern writing unit configured to write the pattern and the identification figure on the target object on the basis of the synthesized pattern writing data.

Abstract: A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

Abstract: A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens.

Abstract: A writing apparatus includes a writing unit configured to a write a pattern onto a target workpiece, based on a writing data of the pattern to be written on the target workpiece, and a generation unit configured generate, after the pattern has been written, writing data of a figure code indicating a writing information of when the target workpiece is written, based on the writing information, wherein the writing unit further writes the figure code onto the target workpiece, based on the writing data of the figure code.

Abstract: A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object.

Abstract: A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.

Abstract: A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

Abstract: A writing apparatus includes a writing unit configured to a write a pattern onto a target workpiece, based on a writing data of the pattern to be written on the target workpiece, and a generation unit configured generate, after the pattern has been written, writing data of a figure code indicating a writing information of when the target workpiece is written, based on the writing information, wherein the writing unit further writes the figure code onto the target workpiece, based on the writing data of the figure code.

Abstract: A lithography apparatus includes a generating unit configured, by receiving character information which specifies a shape of an identification figure representing identification information of a target object, to generate pattern writing data of the identification figure on the basis of the character information; a synthesizing unit configured, by receiving a pattern writing data of a pattern written on the target object, to synthesize the pattern writing data of the pattern and the pattern writing data of the identification figure; and a pattern writing unit configured to write the pattern and the identification figure on the target object on the basis of the synthesized pattern writing data.

Abstract: A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

Abstract: A writing apparatus including a selector unit responsive to receipt of input data of a pattern to be written by shots of irradiation of an electron beam, configured to select a current density of the electron beam being shot and a maximal shot size thereof based on the input data of the pattern to be written; and a writing unit configured to create an electron beam with the current density selected by said selector unit, shape the created electron beam into a shot size less than or equal to said maximal shot size in units of the shots, and shoot the shaped electron beam onto a workpiece to thereby write said pattern.

Abstract: A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object.

Abstract: A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens.

Abstract: A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

Abstract: A method of calculating a deflection aberration correcting voltage includes writing predetermined patterns at a plurality of focus height positions measuring dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions, calculating effective resolutions of the written predetermined patterns by using the dimensional variations, and on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and output the correcting voltage, wherein the correcting voltage is used when a charged particle beam is deflected.

Abstract: A writing apparatus including a selector unit responsive to receipt of input data of a pattern to be written by shots of irradiation of an electron beam, configured to select a current density of the electron beam being shot and a maximal shot size thereof based on the input data of the pattern to be written; and a writing unit configured to create an electron beam with the current density selected by said selector unit, shape the created electron beam into a shot size less than or equal to said maximal shot size in units of the shots, and shoot the shaped electron beam onto a workpiece to thereby write said pattern.

Abstract: A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.

Abstract: A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.

Abstract: A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.

Abstract: A charged particle beam system includes a chamber having an opening in a ceiling, a table placed immediately below the opening and movable in one direction, a laser interferometer set in the chamber, including a laser oscillator placed along the moving direction of the table, a movable mirror placed on the table side opposing the oscillator, a beam splitter placed to cross the laser beam and a fixed mirror fixed, immediately above the beam splitter, on the ceiling of the chamber, an optical lens barrel having an opening communicating with the opening of the chamber, and a beam gun set on a ceiling of the optical lens barrel to irradiate a specimen placed on the table with a charged particle beam through the first and second openings. At least an upper wall portion from the opening to the fixed mirror of the chamber is made of an invar alloy.