Abstract: An image display unit having a structure in which a heat-resisting fine particle layer is formed on a metal back layer disposed on a phosphor layer, and a getter layer is deposited/formed on the heat-resisting fine particle layer by vapor-depositing. The fine particle layer is desirably formed in a specified pattern, and a filmy getter layer is formed in a pattern complementary to the former pattern. The average particle size of heat-resisting fine particles which may use SiO2, TiO2, Al2O3, Fe2O3 is 5 nm to 30 ?m. Since abnormal discharging is restricted, the destruction and deterioration of an electron emitting element and a phosphor screen are prevented to provide a high-brightness, high-grade display.

Abstract: A method for forming a phosphor screen comprising the step of forming a phosphor layer containing a thermoplastic resin on the inner surface of a face plate, the step of pressurizing the phosphor layer being heated to plasticate the thermoplastic resin and smooth the surface of the phosphor layer, and the step of forming a metal film on the surface-smoothed phosphor layer and heating the face plate. Thermoplastic resin having a softening temperature of 50–350° C. can be used in the phosphor layer, and 0.05–50 wt % of such a thermoplastic resin in solid content ratio is contained in the layer. Heating/pressurizing conditions preferably involve temperatures of 50–350° C. and pressures of 10–10000 N/cm2. This method enhances the film forming property of a metal back layer and prevents cracks and pinholes in the metal back layer.

Abstract: An image display device having a vacuum envelope which has a light transmissible panel, a funnel and a neck, its inside held vacuum, a phosphor layer is formed on the inside surface of the light transmissible panel, an electron gun is disposed within the neck. An antistatic film which contains high-resistance fine particles having a specific resistivity of 106 to 109 ?·cm is formed on inside wall of the neck. The image display device is free from deterioration of display characteristics caused by a change of the track of electrons emitted by the application of voltage, a spark in a tube, or a leakage current.

Abstract: An image display unit having a structure in which a heat-resisting fine particle layer is formed on a metal back layer disposed on a phosphor layer, and a getter layer is deposited/formed on the heat-resisting fine particle layer by vapor-depositing. The fine particle layer is desirably formed in a specified pattern, and a filmy getter layer is formed in a pattern complementary to the former pattern. The average particle size of heat-resisting fine particles which may use SiO2, TiO2, Al2O3, Fe2O3 is 5 nm to 30 &mgr;m. Since abnormal discharging is restricted, the destruction and deterioration of an electron emitting element and a phosphor screen are prevented to provide a high-brightness, high-grade display.

Abstract: A method for forming a phosphor screen comprising the step of forming a phosphor layer containing a thermoplastic resin on the inner surface of a face plate, the step of pressurizing the phosphor layer being heated to plasticate the thermoplastic resin and smooth the surface of the phosphor layer, and the step of forming a metal film on the surface-smoothed phosphor layer and heating the face plate. Thermoplastic resin having a softening temperature of 50-350° C. can be used in the phosphor layer, and 0.05-50 wt % of such a thermoplastic resin in solid content ratio is contained in the layer. Heating/pressurizing conditions preferably involve temperatures of 50-350° C. and pressures of 10-10000 N/cm2. This method enhances the film forming property of a metal back layer and prevents cracks and pinholes in the metal back layer.

Abstract: This dispersion for preventing electrification contains as a primary component high-resistance fine particles having a specific resistivity of 106 to 109&OHgr;·cm. This dispersion is applied by a simple and easy method such as spray coating or brushing and baked to obtain an antistatic film having a reduced dependency of a resistance value on a thickness of a film and environments and having stable antistatic properties.

Abstract: A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

Abstract: A thin film having a good orientation and crystallinity. A method of producing the thin film on a substrate, wherein materials of a thin film are deposited and/or crystallized on a substrate. When a laser ablation method is adopted, the temperature of the glass substrate is set in the range between 200.degree. C. and 700.degree. C., and the pressure of O.sub.2 gas in a film forming chamber is set in the range between 7.times.10.sup.-5 Torr and 1.times.10.sup.-2 Torr. A laser beam irradiates a ZnO target. The target radiates materials of a thin film, such as neutral ions, molecules and ions, and the radiated materials are deposited and/or crystallized on the glass substrate to turn into a ZnO thin film.

Abstract: There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Abstract: There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Abstract: An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.

Abstract: There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.