Patents by Inventor Ho-Ching Chien
Ho-Ching Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9417713Abstract: An image-capturing device configured for an optical pointing apparatus includes a plurality of image-sensing units arranged adjacently. The plurality of image-sensing units are configured to sense images of a surface and generate sensing signals that are used for evaluating the velocity of the optical pointing apparatus. The image-capturing device is configured to use different image-sensing units arranged differently to sense the surface according to the velocity of the optical pointing apparatus. When the optical pointing apparatus moves at a first velocity, the image-capturing device uses the image-sensing units configured to occupy a smaller area to sense the surface. When the optical pointing apparatus moves at a second velocity, the image-capturing device uses the image-sensing units configured to occupy a larger area to sense the surface. The first velocity is lower than the second velocity.Type: GrantFiled: February 8, 2012Date of Patent: August 16, 2016Assignee: PIXART IMAGING INC.Inventors: Sen Huang Huang, Hsin Chia Chen, Tzung Min Su, Han Chi Liu, Ho Ching Chien
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Publication number: 20120206352Abstract: An image-capturing device configured for an optical pointing apparatus includes a plurality of image-sensing units arranged adjacently. The plurality of image-sensing units are configured to sense images of a surface and generate sensing signals that are used for evaluating the velocity of the optical pointing apparatus. The image-capturing device is configured to use different image-sensing units arranged differently to sense the surface according to the velocity of the optical pointing apparatus. When the optical pointing apparatus moves at a first velocity, the image-capturing device uses the image-sensing units configured to occupy a smaller area to sense the surface. When the optical pointing apparatus moves at a second velocity, the image-capturing device uses the image-sensing units configured to occupy a larger area to sense the surface. The first velocity is lower than the second velocity.Type: ApplicationFiled: February 8, 2012Publication date: August 16, 2012Applicant: Pixart Imaging Inc.Inventors: Sen Huang Huang, Hsin Chia Chen, Tzung Min Su, Han Chi Liu, Ho Ching Chien
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Patent number: 8124495Abstract: Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.Type: GrantFiled: January 26, 2007Date of Patent: February 28, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Hsuan Hsu, Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
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Publication number: 20110049565Abstract: The present invention discloses an optoelectronic device, comprising: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 0<x,y<1.Type: ApplicationFiled: September 2, 2009Publication date: March 3, 2011Inventors: Hsin-Hui Hsu, Ho-Ching Chien, Ching-Wei Chen, Sen-Huang Huang
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Patent number: 7847847Abstract: A CMOS image sensor having increased capacitance that allows a photo-diode to generate a larger current is provided. The increased capacitance reduces noise and the dark signal. The image sensor utilizes a transistor having nitride spacers formed on a buffer oxide layer. Additional capacitance may be provided by various capacitor structures, such as a stacked capacitor, a planar capacitor, a trench capacitor, a MOS capacitor, a MIM/PIP capacitor, or the like. Embodiments of the present invention may be utilized in a 4-transistor pixel or a 3-transistor pixel configuration.Type: GrantFiled: January 27, 2005Date of Patent: December 7, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Dun-Nian Yaung, Kuo-Ching Huang, Ho-Ching Chien, Shou-Gwo Wuu
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Patent number: 7649231Abstract: A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are formed for transistors in the CMOS image sensors. The gates comprise a conductor layer overlying the semiconductor substrate with an insulating layer therebetween. The transistors include reset transistors. Ions are implanted into the semiconductor substrate to form source/drain regions for the transistors. The source regions of the reset transistors are formed in the first terminals of the sensor diodes. Ions are implanted into the reset transistor sources to form double diffused sources. The implanting is blocked from other source/drain regions.Type: GrantFiled: October 9, 2003Date of Patent: January 19, 2010Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng
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Patent number: 7553689Abstract: A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.Type: GrantFiled: July 13, 2005Date of Patent: June 30, 2009Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jeng-Shyan Lin, Chien-Hsien Tseng, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung, Hung-Jen Hsu
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Patent number: 7479403Abstract: A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.Type: GrantFiled: July 19, 2006Date of Patent: January 20, 2009Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Dun-Nian Yaung, Sou-Kuo Wu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
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Patent number: 7338830Abstract: A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.Type: GrantFiled: November 10, 2005Date of Patent: March 4, 2008Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Hsuan Hsu, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung
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Patent number: 7332368Abstract: A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.Type: GrantFiled: November 22, 2005Date of Patent: February 19, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng
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Patent number: 7288429Abstract: An image sensor with a vertically integrated thin-film photodiode includes a bottom doped layer of a PIN photodiode imbedded in a dielectric layer, wherein a bottom surface of the bottom doped layer completely contacts its corresponding underlying pixel electrode. The bottom doped layers of the PIN photodiodes are formed by a self-aligned and damascene method, therefore the pixel electrodes are not exposed to the I-type amorphous silicon layer of the PIN photodiodes. Moreover, the transparent electrode connects the PIN photodiodes to an external ground voltage power through a ground pad which is a portion of a top metal layer.Type: GrantFiled: November 18, 2005Date of Patent: October 30, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Dun-Nian Yaung, Sou-Kuo Wu, Ho-Ching Chien
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Patent number: 7253458Abstract: A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 ?m. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.Type: GrantFiled: November 4, 2004Date of Patent: August 7, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tzu-Hsuan Hsu, Dun-Nian Yaung, Wen-De Wang, Ho-Ching Chien, Shou-Gwo Wuu
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Patent number: 7242430Abstract: An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.Type: GrantFiled: November 3, 2004Date of Patent: July 10, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Dun-Nian Yaung, Ho-Ching Chien, Tzu-Hsuan Hsu
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Patent number: 7232697Abstract: Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.Type: GrantFiled: April 5, 2004Date of Patent: June 19, 2007Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Hsuan Hsu, Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
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Publication number: 20070120160Abstract: Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.Type: ApplicationFiled: January 26, 2007Publication date: May 31, 2007Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Hsuan Hsu, Dun-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
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Publication number: 20070015305Abstract: A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.Type: ApplicationFiled: July 13, 2005Publication date: January 18, 2007Inventors: Jeng-Shyan Lin, Chien-Hsien Tseng, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung, Hung-Jen Hsu
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Patent number: 7145190Abstract: A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.Type: GrantFiled: August 16, 2004Date of Patent: December 5, 2006Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Dun-Nian Yaung, Sou-Kuo Wu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
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Publication number: 20060270091Abstract: A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.Type: ApplicationFiled: July 19, 2006Publication date: November 30, 2006Inventors: Dun-Nian Yaung, Sou-Kuo Wu, Ho-Ching Chien, Chien-Hsien Tseng, Jeng-Shyan Lin
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Patent number: 7123303Abstract: A focal plane array in which information from the pixel forming elements is transferred into a vertical shift register and then from the last stage of the vertical shift registers row by row into a horizontal shift register is provided with a storage element and gate between each vertical register and the corresponding stage of the horizontal register. After the information currently in the storage gates has been transferred to the corresponding HCCD stages, the transfer gate is closed, and the next shift of the vertical registers begins, during a time when the vertical registers would otherwise be stopped, waiting for the multi-phase operation of the horizontal register. This time is used for usefully increasing the time for the vertical shift operation, and the clock is advantageously made slower. Alternatively, a faster frame rate can be handled by conventional clock circuits.Type: GrantFiled: April 14, 1994Date of Patent: October 17, 2006Assignee: Industrial Technology Research InstituteInventors: Ho-Ching Chien, Chun-Hui Tsai, Chung-Ren Lao
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Publication number: 20060164531Abstract: A CMOS image sensor having increased capacitance that allows a photo-diode to generate a larger current is provided. The increased capacitance reduces noise and the dark signal. The image sensor utilizes a transistor having nitride spacers formed on a buffer oxide layer. Additional capacitance may be provided by various capacitor structures, such as a stacked capacitor, a planar capacitor, a trench capacitor, a MOS capacitor, a MIM/PIP capacitor, or the like. Embodiments of the present invention may be utilized in a 4-transistor pixel or a 3-transistor pixel configuration.Type: ApplicationFiled: January 27, 2005Publication date: July 27, 2006Inventors: Dun-Nian Yaung, Kuo-Ching Huang, Ho-Ching Chien, Shou-Gwo Wuu