Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: An image sensor includes a substrate having first and second surfaces and first and second regions. Unit pixels including photoelectric conversion layers are arranged inside the first region. A pixel separation pattern extends from the first surface to the second surface in the first region, separates each of the unit pixels, and includes a pixel separation spacer film and a pixel separation filling film. A dummy pixel separation pattern extends from the first surface to the second surface in the second region, and includes a dummy pixel separation filling film. A wiring structure disposed on the second surface includes an inter-wiring insulating film and a first wiring. A first contact directly connects the dummy pixel separation filling film and connects the dummy pixel separation filling film to the first wiring. A height of the pixel separation filling film is greater than a height of the dummy pixel separation filling film.

Abstract: A probe device includes an optical fiber array including an optical fiber to be in optical communication with an optical integrated circuit board, the optical integrated circuit board including an optical coupling element and a reflection mirror, a base substrate fixing the optical fiber, and an intermediate substrate including a hole into which the optical fiber is inserted, and a probe mirror to reflect an optical signal between the reflection mirror and the optical coupling element.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: Photonic integrated circuit packages having improved integration, and methods of manufacturing such photonic integrated circuit packages, are provided. As an example, a photonic integrated circuit package may include a substrate, a first insulating layer on the substrate, a photonic core layer on the first insulating layer, and a second insulating layer on the photonic core layer. A photonic coupling device may be in the photonic core layer, and may be, as examples, at least one of a grating coupler or a photodetector. A concave mirror may extend into at least the second insulating layer. In some embodiments, the concave mirror may extend through the second insulating layer and into the first insulating layer.

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

Abstract: A photonic integrated circuit package includes a first substrate including a first mirror and an optical coupling device spaced apart from each other, and a second substrate on an upper portion of the first substrate, the second substrate including an electro-optical converter and a second mirror, the electro-optical converter to output an optical signal to the first mirror, and the second mirror to reflect an optical signal reflected by and received from the first mirror to the optical coupling device.

Abstract: A probe device includes an optical fiber array including an optical fiber to be in optical communication with an optical integrated circuit board, the optical integrated circuit board including an optical coupling element and a reflection mirror, a base substrate fixing the optical fiber, and an intermediate substrate including a hole into which the optical fiber is inserted, and a probe mirror to reflect an optical signal between the reflection mirror and the optical coupling element.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: A semiconductor device includes a first device and a second device. The first device includes at least one waveguide on a first substrate. The second device is on the first device and includes at least one optical fiber on an upper surface of a second substrate, a reflector on the upper surface of the second substrate, and a lens on a lower surface of the second substrate below the reflector. The at least one waveguide to carry light from the reflector and passing through the lens for output to the optical fiber.